Image sensor
An image sensor includes a pixel division structure, a light sensing element, a transistor, a color filter array layer, and a microlens. The pixel division structure extends through a substrate in a vertical direction substantially perpendicular to an upper surface of the substrate, and defines unit pixel regions in which unit pixels are respectively formed. The light sensing element is formed in each of the unit pixel regions. The transistor is formed on the substrate. The color filter array layer is formed under the substrate, and includes color filters. The microlens is formed under the color filter array layer. The transistor includes a gate structure on an active fin protruding from the upper surface of the substrate and source/drain regions at portions of the active fin adjacent to the gate structure.
1 . An image sensor comprising:
a pixel division structure extending through a substrate in a vertical direction perpendicular to an upper surface of the substrate, the pixel division structure defining unit pixel regions in which unit pixels are respectively formed;
a light sensing element in each of the unit pixel regions;
a transistor on the substrate;
a color filter array layer under the substrate, the color filter array layer including color filters; and
a microlens under the color filter array layer,
wherein the transistor comprises
a gate structure on an active fin protruding from the upper surface of the substrate, and
source/drain regions at portions of the active fin adjacent to the gate structure, and
wherein the image sensor further comprises
a silicon-fluorine layer at a portion of the active fin under the gate structure, or
a polysilicon layer doped with fluorine between the gate structure and the active fin.
2 . The image sensor of claim 1 , wherein the image sensor comprises the silicon-fluorine layer at the portion of the active fin under the gate structure.
3 . The image sensor of claim 2 , wherein the gate structure comprises:
a gate insulation pattern on the silicon-fluorine layer; and
a gate electrode on the gate insulation pattern.
4 . The image sensor of claim 1 , wherein the image sensor comprises the polysilicon layer doped with fluorine between the gate structure and the active fin.
5 . The image sensor of claim 4 , wherein the gate structure comprises:
a gate insulation pattern on the polysilicon layer doped with fluorine; and
a gate electrode on the gate insulation pattern.
6 . The image sensor of claim 1 , wherein the gate structure is a first gate structure, and the image sensor further comprises:
a second gate structure contacting an upper surface of the light sensing element; and
a floating diffusion (FD) region at an upper portion of the substrate and contacting the second gate structure,
wherein the second gate structure, the light sensing element and the FD region configure a transfer transistor.
7 . The image sensor of claim 1 , wherein the transistor is one of a reset transistor, a source follower transistor and a select transistor.
8 . The image sensor of claim 1 , wherein the active fin is one of a plurality of active fins spaced apart from each other in a second direction parallel to the upper surface of the substrate, each of the plurality of active fins extending in a first direction parallel to the upper surface of the substrate and crossing the second direction, and
wherein the gate structure extends in the second direction on ones of the plurality of active fins.
9 . An image sensor comprising:
a pixel division structure extending through a substrate in a vertical direction perpendicular to an upper surface of the substrate, the pixel division structure defining unit pixel regions in which unit pixels are respectively formed;
a light sensing element in each of the unit pixel regions;
a transistor on the substrate;
a color filter array layer under the substrate, the color filter array layer including color filters; and
a microlens under the color filter array layer,
wherein the transistor comprises
a gate structure on the substrate; and
source/drain regions at portions of the substrate adjacent to the gate structure, and
wherein a silicon-fluorine layer is formed at an upper portion of the substrate under the gate structure.
10 . The image sensor of claim 9 , wherein the gate structure comprises:
a gate insulation pattern on the silicon-fluorine layer; and
a gate electrode on the gate insulation pattern.
11 . The image sensor of claim 9 , wherein the gate structure is a first gate structure, and the image sensor further comprises:
a second gate structure contacting an upper surface of the light sensing element; and
a floating diffusion (FD) region at an upper portion of the substrate and contacting the second gate structure, and
wherein the second gate structure, the light sensing element and the FD region configure a transfer transistor.
12 . The image sensor of claim 9 , wherein the transistor is one of a reset transistor, a source follower transistor and a select transistor.
13 . The image sensor of claim 9 , wherein an active fin is formed on the substrate, the active fin protruding from the upper surface of the substrate, and
wherein the gate structure is formed on the active fin, and the source/drain regions are formed at portions of the active fin adjacent to the gate structure.
14 . The image sensor of claim 13 , wherein the active fin is one of a plurality of active fins spaced apart from each other in a second direction parallel to the upper surface of the substrate, each of the plurality of active fins extending in a first direction parallel to the upper surf ace of the substrate and crossing the second direction, and
wherein the gate structure extends in the second direction on ones of the plurality of active fins.
15 . An image sensor comprising:
a first substrate;
a first insulating interlayer on the first substrate, the first insulating interlayer containing first wirings;
a second insulating interlayer on the first insulating interlayer, the second insulating interlayer containing second wirings;
a second substrate on the second insulating interlayer;
a pixel division structure in the second substrate, the pixel division structure defining unit pixel regions in which unit pixels are respectively formed;
a light sensing element in each of the unit pixel regions of the second substrate;
a first gate structure extending through a lower portion of the second substrate and contacting the light sensing element;
a floating diffusion (FD) region at the lower portion of the second substrate adjacent to the first gate structure;
a second gate structure under an active fin, the active fin protruding from a lower surface of the second substrate downwardly;
a lower planarization layer on the second substrate;
a color filter array layer on the second substrate, the color filter array layer including color filters;
a microlens on the color filter array layer; and
a silicon-fluorine layer at a portion of the active fin on the second gate structure; or
a polysilicon layer doped with fluorine between the second gate structure and the active fin.
16 . The image sensor of claim 15 , wherein the first substrate defines a first region, a second region surrounding the first region, a third region surrounding the second region, and a fourth region surrounding the third region in an inner portion of the first substrate, an upper space over the first substrate, and a lower space under the first substrate,
the pixel division structure is formed in the first and second regions, and
the color filter array layer is formed in the first region.
17 . The image sensor of claim 16 , wherein the first and second wirings are formed in the third region, and
wherein the image sensor further comprises:
a through via structure extending through the lower planarization layer, the second substrate, the second insulating interlayer and an upper portion of the first insulating interlayer and commonly contacting the first and second wirings in the third region; and
a conductive pad extending through the lower planarization layer and an upper portion of the second substrate in the fourth region.
18 . The image sensor of claim 15 , wherein the image sensor comprises the silicon-fluorine layer at the portion of the active fin on the second gate structure.
19 . The image sensor of claim 15 , wherein the image sensor comprises the polysilicon layer doped with fluorine between the second gate structure and the active fin.
20 . The image sensor of claim 15 , further comprising source/drain regions at portions of the active fin adjacent to the second gate structure,
wherein the second gate structure and the source/drain regions configure one of a reset transistor, a source follower transistor and a select transistor.