Light emitting display device
A light emitting display device includes a driving transistor including a first driving gate electrode, a second driving gate electrode, a first electrode, and a second electrode, a second transistor including a gate electrode, a first electrode connected to a data line, and a second electrode connected to the second driving gate electrode, a light emitting diode including an anode directly connected to the second electrode of the driving transistor, a storage capacitor including a first storage electrode connected to the anode of the light emitting diode and a second storage electrode connected to the second driving gate electrode, a driving voltage line directly connected to the first electrode of the driving transistor, and a light emitting control line directly connected to the first driving gate electrode.
1 . A light emitting display device comprising:
a driving transistor including a first driving gate electrode, a second driving gate electrode, a first electrode, and a second electrode;
a second transistor including a gate electrode, a first electrode connected to a data line, and a second electrode connected to the second driving gate electrode;
a light emitting diode including an anode directly connected to the second electrode of the driving transistor;
a storage capacitor including a first storage electrode connected to the anode of the light emitting diode and a second storage electrode connected to the second driving gate electrode;
a driving voltage line directly connected to the first electrode of the driving transistor; and
an emission control line directly connected to the first driving gate electrode.
2 . The light emitting display device of claim 1 , wherein
the driving transistor transfers an output current to the anode of the light emitting diode based on a light emitting signal applied to the first driving gate electrode and a data voltage applied to the second driving gate electrode.
3 . The light emitting display device of claim 2 , further comprising:
a third transistor including a gate electrode, a first electrode connected to a reference voltage line, and a second electrode connected to the second driving gate electrode.
4 . The light emitting display device of claim 3 , further comprising:
a fourth transistor including a gate electrode, a first electrode connected to an initialization voltage line, and a second electrode connected to the anode and the first storage electrode.
5 . The light emitting display device of claim 4 , wherein
each of the driving transistor, the second transistor, the third transistor, and the fourth transistor is an n-type transistor including an oxide semiconductor.
6 . The light emitting display device of claim 4 , further comprising:
a first scan line connected to the gate electrode of the second transistor;
a second scan line connected to the gate electrode of the third transistor; and
a third scan line connected to the gate electrode of the fourth transistor.
7 . The light emitting display device of claim 1 , further comprising:
a first conductive layer disposed on a substrate and including the second driving gate electrode;
a first insulating layer is disposed on the first conductive layer;
a semiconductor layer disposed on the first insulating layer and including a channel of the driving transistor;
a second insulating layer disposed over the semiconductor layer; and
a second conductive layer disposed on the second insulating layer and including the first driving gate electrode,
where a thickness of the second insulating layer is smaller than a thickness of the first insulating layer.
8 . The light emitting display device of claim 1 , further comprising:
a first conductive layer disposed on a substrate and including the first driving gate electrode;
a first insulating layer disposed on the first conductive layer;
a semiconductor layer disposed on the first insulating layer and including a channel of the driving transistor;
a second insulating layer disposed over the semiconductor layer; and
a second conductive layer disposed on the second insulating layer and including the second driving gate electrode;
wherein a thickness of the second insulating layer is greater than a thickness of the first insulating layer.
9 . The light emitting display device of claim 1 , wherein
the driving transistor includes a semiconductor layer;
the semiconductor layer is integrally formed with the first storage electrode as a single unitary and indivisible part; and
the second storage electrode is integrally formed with the second driving gate electrode as a single unitary and indivisible part.
10 . The light emitting display device of claim 9 , wherein
the first storage electrode of the semiconductor layer is defined by a portion of the semiconductor layer having a conductivity to function as a conductor through an ion implantation or doping process.
11 . A light emitting display device comprising:
a driving transistor including a first driving gate electrode, a second driving gate electrode, a first electrode, and a second electrode;
a second transistor including a gate electrode, a first electrode connected to a data line, and a second electrode connected to the first driving gate electrode;
a light emitting diode including an anode directly connected to the second electrode of the driving transistor;
a storage capacitor including a first storage electrode connected to the anode of the light emitting diode and a second storage electrode connected to the first driving gate electrode;
a driving voltage line directly connected to the first electrode of the driving transistor; and
an emission control line directly connected to the second driving gate electrode.
12 . The light emitting display device of claim 11 , wherein
the driving transistor transfers an output current to the anode of the light emitting diode based on a light emitting signal applied to the second driving gate electrode and a data voltage applied to the first driving gate electrode.
13 . The light emitting display device of claim 12 , further comprising:
a third transistor including a gate electrode, a first electrode connected to a reference voltage line, and a second electrode connected to the first driving gate electrode.
14 . The light emitting display device of claim 13 , further comprising:
a fourth transistor including a gate electrode, a first electrode connected to an initialization voltage line, and a second electrode connected to the anode and the first storage electrode.
15 . The light emitting display device of claim 14 , wherein
each of the second transistor, the third transistor, and the fourth transistor is an n-type transistor including an oxide semiconductor.
16 . The light emitting display device of claim 14 , further comprising:
a first scan line connected to the gate electrode of the second transistor;
a second scan line connected to the gate electrode of the third transistor; and
a third scan line connected to the gate electrode of the fourth transistor.
17 . The light emitting display device of claim 11 , further comprising:
a first conductive layer disposed on a substrate and including the second driving gate electrode;
a first insulating layer disposed on the first conductive layer;
a semiconductor layer disposed on the first insulating layer and including a channel of the driving transistor;
a second insulating layer disposed over the semiconductor layer; and
a second conductive layer disposed on the second insulating layer and including the first driving gate electrode;
wherein a thickness of the second insulating layer is smaller than a thickness of the first insulating layer.
18 . The light emitting display device of claim 11 , further comprising:
a first conductive layer disposed on a substrate and including the first driving gate electrode;
a first insulating layer disposed on the first conductive layer;
a semiconductor layer disposed on the first insulating layer and including a channel of the driving transistor;
a second insulating layer disposed over the semiconductor layer; and
a second conductive layer disposed on the second insulating layer and including the second driving gate electrode,
wherein a thickness of the second insulating layer is greater than that of a first insulating layer.
19 . The light emitting display device of claim 11 , wherein
the driving transistor includes a semiconductor layer,
the semiconductor layer is integrally formed with the first storage electrode as a single unitary and indivisible part, and
the second storage electrode is integrally formed with the first driving gate electrode as a single unitary and indivisible part.
20 . The light emitting display device of claim 19 , wherein
the first storage electrode of the semiconductor layer is defined by a portion of the semiconductor layer having a conductivity to function as a conductor through an ion implantation or doping process.