IP Library › Granted Patent US 12,733,390
Granted Patent B2
US 12,733,390 · App. 17/704,679 · Granted Sep 8, 2026

Light-emitting device and display apparatus including the same

Inventors: Heungsu Park (Anyang-si, KR); Songeun Lee (Hwaseong-si, KR); Namsu Kang (Seoul, KR); Jongwon Lee (Yongin-si, KR); Hyunshik Lee (Seoul, KR)
Assignee: Samsung Display Co., Ltd.
H10K85/346H10K85/342H10K50/11H10K50/15H10K50/16H10K50/171H10K2101/30H10K2101/40
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Quick Facts
Patent No.
US 12,733,390
App. No.
17/704,679
Granted
Sep 8, 2026
Kind
B2
Abstract

A light-emitting device including a first electrode, a hole transport region disposed on the first electrode, a first light-emitting layer disposed on the hole transport region and emitting light of a first wavelength, a second light-emitting layer disposed on the hole transport region and emitting light of a second wavelength different from the first wavelength, an electron transport region disposed on the first light-emitting layer and the second light-emitting layer, and a second electrode disposed on the electron transport region, wherein the second light-emitting layer includes a first sub light-emitting layer including a first host and a first dopant and emitting the light of the second wavelength, and a second sub light-emitting layer including a second host different from the first host and a second dopant and emitting the light of the second wavelength. Accordingly, a luminous efficiency and device lifetime of the light-emitting device may be improved.

Claims (85)

1 . A light-emitting device comprising:

a first electrode;

a hole transport region disposed on the first electrode;

a first light-emitting layer disposed on the hole transport region and emitting light of a first wavelength;

a second light-emitting layer disposed on the hole transport region and being for emitting light of a second wavelength different from the first wavelength;

an electron transport region disposed on the first light-emitting layer and the second light-emitting layer; and

a second electrode disposed on the electron transport region,

wherein the second light-emitting layer includes:

a first sub light-emitting layer including a first host and a first dopant and emitting the light of the second wavelength; and

a second sub light-emitting layer including a second host different from the first host and a second dopant and being for emitting the light of the second wavelength,

the first sub light-emitting layer contacting the second sub light-emitting layer.

2 . The light-emitting device of claim 1 , wherein

the first wavelength is about 420 nm to about 480 nm, and

the second wavelength is about 520 nm to about 600 nm.

3 . The light-emitting device of claim 1 , further comprising:

a charge generation layer disposed between the first light-emitting layer and the second light-emitting layer.

4 . The light-emitting device of claim 3 , wherein the charge generation layer comprises:

a p-type charge generation layer doped with p-dopants; and

an n-type charge generation layer doped with n-dopants.

5 . The light-emitting device of claim 1 , further comprising:

a first additional light-emitting layer disposed between the hole transport region and the electron transport region and being for emitting the light of the first wavelength.

6 . The light-emitting device of claim 5 , further comprising:

a second additional light-emitting layer disposed between the first light-emitting layer and the second light-emitting layer and being for emitting the light of the first wavelength.

7 . The light-emitting device of claim 1 , wherein the first dopant includes an organometallic compound having a central metal of platinum (Pt).

8 . The light-emitting device of claim 7 , wherein

the first dopant is represented by Formula M-a below:

in Formula M-a,

Q 1 to Q 4 are each independently C or N,

rings C1 to C4 are each independently a substituted or unsubstituted hydrocarbon ring having 5 to 30 ring-forming carbon atoms or a substituted or unsubstituted heterocycle having 2 to 30 ring-forming carbon atoms,

L 21 to L 24 are each independently a direct linkage,

 a substituted or unsubstituted divalent alkyl group having 1 to 20 carbon atoms, a substituted or unsubstituted arylene group having 6 to 30 ring-forming carbon atoms, or a substituted or unsubstituted heteroarylene group having 2 to 30 ring-forming carbon atoms,

e1 to e4 are each independently 0 or 1,

R 31 to R 39 are each independently a hydrogen atom, a deuterium atom, a halogen atom, a cyano group, a substituted or unsubstituted amine group, a substituted or unsubstituted alkyl group having 1 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 ring-forming carbon atoms, or a substituted or unsubstituted heteroaryl group having 2 to 30 ring-forming carbon atoms, or are bonded to an adjacent group to form a ring, and

d1 to d4 are each independently an integer of 0 to 4.

9 . The light-emitting device of claim 1 , wherein the second dopant includes an organometallic compound having a central metal of iridium (Ir).

10 . The light-emitting device of claim 9 , wherein

the second dopant is represented by Formula M-b:

in Formula M-b,

Y 1 to Y 4 , and Z 1 to Z 4 are each independently CR 1 or N,

R 1 to R 4 are each independently be a hydrogen atom, a deuterium atom, a substituted or unsubstituted amine group, a substituted or unsubstituted thio group, a substituted or unsubstituted oxy group, a substituted or unsubstituted alkyl group having 1 to 20 carbon atoms, a substituted or unsubstituted alkenyl group having 2 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 ring-forming carbon atoms, or a substituted or unsubstituted heteroaryl group having 2 to 30 ring-forming carbon atoms, or are bonded to an adjacent group to form a ring,

m is 0 or 1,

n is 2 or 3,

in case that m is 0, n is 3, and

in case that m is 1, n is 2.

11 . The light-emitting device of claim 1 , wherein

the hole transport region comprises:

a hole injection layer disposed on the first electrode; and

a hole transport layer disposed on the hole injection layer, and

the electron transport region includes:

an electron transport layer disposed on the first light-emitting layer and the second light-emitting layer; and

an electron injection layer disposed on the electron transport layer.

12 . The light-emitting device of claim 1 , further comprising:

a capping layer disposed on the second electrode,

wherein the capping layer has a refractive index of about 1.6 or more.

13 . The light-emitting device of claim 4 , further comprising:

an intermediate electron transport layer disposed between the first light-emitting layer and the charge generation layer; and

an intermediate hole transport layer disposed between the charge generation layer and the second light-emitting layer.

14 . A display apparatus comprising:

a display panel including:

a first pixel region being for emitting light of a first wavelength;

a second pixel region being for emitting light of a second wavelength different from the first wavelength;

a third pixel region being for emitting light of a third wavelength different from the first wavelength and the second wavelength; and

a light-emitting device overlapping the first to third pixel regions in a plan view; and

a light control layer including:

a first light control part disposed on the display panel and overlapping the first pixel region in the plan view;

a second light control part overlapping the second pixel region in the plan view; and

a third light control part overlapping the third pixel region in the plan view, wherein

the light-emitting device includes:

a first electrode;

a hole transport region disposed on the first electrode;

a first light-emitting layer disposed on the hole transport region and being for emitting the light of the first wavelength;

a second light-emitting layer disposed on the hole transport region and being for emitting the light of the second wavelength;

an electron transport region disposed on the first light-emitting layer and the second light-emitting layer; and

a second electrode disposed on the electron transport region,

the second light-emitting layer includes a first sub light-emitting layer including a first host and a first dopant and being configured to emit the light of the second wavelength, and

a second sub light-emitting layer includes a second host different from the first host and a second dopant and being configured to emit the light of the second wavelength,

the first sub light-emitting layer contacting the second sub light-emitting layer.

15 . The display apparatus of claim 14 , wherein

the first wavelength is about 420 nm to about 480 nm, and

the second wavelength is about 520 nm to about 600 nm.

16 . The display apparatus of claim 14 , wherein

the second light control part comprises quantum dots that convert the light of the first wavelength into the light of the second wavelength, and

the third light control part comprises quantum dots that convert light of the first wavelength or light of the second wavelength into the light of the third wavelength.

17 . The display apparatus of claim 14 , further comprising:

a color filter layer disposed on the light control layer.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 28, 2022
From: PARK, HEUNGSU; LEE, SONGEUN; KANG, NAMSU; LEE, JONGWON; LEE, HYUNSHIK
To: SAMSUNG DISPLAY CO., LTD.
Reel/Frame 059414/0313 →
Priority Claims (1)
KR 10-2021-0085128 · Jun 29, 2021 · national
Continuity (1)
Related Publication 20230016588A1 · Jan 19, 2023
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