Cassette structures and related methods for batch processing in epitaxial deposition operations
The present disclosure relates to cassette structures and related methods for batch processing in epitaxial deposition operations. In one implementation, a cassette configured for disposition in a substrate processing chamber includes a first wall, a second wall spaced from the first wall, and one or more sidewalls extending between and coupled to the first wall and the second wall. The cassette includes one or more inlet openings formed in the one or more sidewalls, and one or more outlet openings formed in the one or more sidewalls opposite the one or more inlet openings. The cassette includes a plurality of levels that include a plurality of substrate supports mounted to the one or more sidewalls and spaced from each other along the one or more sidewalls.
1 . A cassette configured for disposition in a substrate processing chamber, comprising:
a first wall;
a second wall spaced from the first wall;
one or more sidewalls extending between and coupled to the first wall and the second wall;
one or more inlet openings formed in the one or more sidewalls;
one or more outlet openings formed in the one or more sidewalls opposite the one or more inlet openings; and
a plurality of levels comprising a plurality of substrate supports mounted to the one or more sidewalls and spaced from each other along the one or more sidewalls, the one or more sidewalls defining a sleeve that surrounds by more than 180 degrees the plurality of substrate supports disposed in an internal volume, and the plurality of substrate supports comprising:
a plurality of arcuate ring segments respectively comprising:
an outer ledge that extends into the one or more sidewalls, and
an inner ledge that extends inwardly relative to the one or more sidewalls.
2 . The cassette of claim 1 , wherein the outer ledge defines a shoulder interfacing with a recessed surface and a shoulder of the one or more sidewalls.
3 . The cassette of claim 1 , further comprising a reflective surface on an inner face of each of the one or more sidewalls.
4 . The cassette of claim 3 , wherein the inner ledge has an inward end that extends past the reflective surface by a distance that is 10.00 mm or less.
5 . The cassette of claim 3 , wherein the reflective surface is a roughened surface of the one or more sidewalls.
6 . The cassette of claim 5 , wherein the reflective surface is part of a liner formed of gold (Au) or quartz.
7 . The cassette of claim 1 , wherein the reflective surface has a reflectivity within a range of 0.3 to 0.9999.
8 . The cassette of claim 1 , further comprising a gap formed in the one or more sidewalls, the gap sized and shaped for substrate transfer.
9 . The cassette of claim 1 , wherein the one or more outlet openings include an outlet opening that spans the plurality of levels.
10 . The cassette of claim 1 , wherein each of the one or more sidewalls is formed of one or more of silicon carbide (SiC), quartz, or graphite coated with SiC.
11 . The cassette of claim 1 , wherein each substrate support of each level of the plurality of levels comprises one or more arcuate ring segments of the plurality of arcuate ring segments.
12 . The cassette of claim 11 , wherein the plurality of arcuate ring segments of the respective level are spaced circumferentially from each other along the one or more sidewalls.
13 . The cassette of claim 1 , wherein the inner ledge having has an inward end that extends past the reflective surface one or more sidewalls by a distance that is 10.0 mm or less.
14 . The cassette of claim 1 , wherein each of the one or more inlet openings is aligned between two of the plurality of substrate supports.
15 . The cassette of claim 14 , wherein the one or more inlet openings are positioned as a plurality of flow levels.
16 . The cassette of claim 15 , wherein for each flow level the one or more inlet openings include a plurality of inlet openings spaced from each other circumferentially along the one or more sidewalls by an angle, and the angle is within a range of 20 degrees to 120 degrees.
17 . The cassette of claim 15 , wherein for each flow level the one or more inlet openings include a plurality of inlet openings having a cross-sectional shape that is circular or ovular.
18 . The cassette of claim 15 , wherein for each flow level the one or more inlet openings include one or more slots that extend circumferentially along the one or more sidewalls by a slot angle.
19 . The cassette of claim 18 , wherein the slot angle is within a range of 20 degrees to 120 degrees.
20 . An apparatus for substrate processing, comprising:
a chamber body comprising:
a processing volume,
a plurality of gas inject passages formed in the chamber body and positioned as a plurality of inject levels, and
one or more gas exhaust passages formed in the chamber body opposite the plurality of gas inject passages; and
one or more heat sources configured to generate heat;
a pedestal assembly positioned in the processing volume; and
the cassette of claim 1 , wherein the cassette is positioned in the processing volume and at least partially supported by the pedestal assembly, the cassette comprising:
a plurality of inlet openings formed in the one or more sidewalls and positioned as a plurality of flow levels, each flow level of the plurality of flow levels aligning with and in fluid communication with a respective inject level of the plurality of inject levels.