Light emitting module including light emitter with shaped P-type semiconductor layer
According to one aspect of the present disclosure, there may be provided a light-emitting module, including: a base substrate; and a plurality of light emitting elements disposed on the base substrate to generate light, wherein the plurality of light emitting elements include: a first light emitting element for generating light having a first peak wavelength and a first dominant wavelength; and a second light emitting element for generating light having a second peak wavelength and a second dominant wavelength, and wherein a first absolute value, which is an absolute value of the difference between the first peak wavelength and the first dominant wavelength, is smaller than a second absolute value, which is an absolute value of the difference between the second peak wavelength and the second dominant wavelength.
1 . A light-emitting module, comprising:
a base substrate; and
a group of light emitters disposed on the base substrate to generate light,
wherein the group of light emitters include:
a first light emitter for generating light having a first peak wavelength and a first dominant wavelength, wherein the first light emitter includes a first P-type semiconductor layer and a first N-type semiconductor layer disposed on the base substrate; and
a second light emitter for generating light having a second peak wavelength and a second dominant wavelength, wherein the second light emitter includes a second P-type semiconductor layer and a second N-type semiconductor layer sequentially stacked from the base substrate,
wherein, when the first light emitter is viewed from above, the first P-type semiconductor layer includes at least four linear edges, and at least three round edges having curved shapes, and the linear edges and the round edges are alternately arranged, and
wherein a first absolute value, which is an absolute value of a difference between the first peak wavelength and the first dominant wavelength, is smaller than a second absolute value, which is an absolute value of a difference between the second peak wavelength and the second dominant wavelength.
2 . The light-emitting module of claim 1 , wherein the second peak wavelength is greater than the first peak wavelength, and the second dominant wavelength is greater than the first dominant wavelength.
3 . The light-emitting module of claim 2 , wherein the group of light emitters further include a third light emitter for generating light having a third peak wavelength and a third dominant wavelength,
the third peak wavelength is greater than the second peak wavelength, and the third dominant wavelength is greater than the second dominant wavelength, and
a third absolute value, which is an absolute value of a difference between the third peak wavelength and the third dominant wavelength, is greater than the second absolute value.
4 . The light-emitting module of claim 3 , wherein the first absolute value is a value in a range of 1 nm to 10 nm, the second absolute value is a value in a range of 5 nm to 15 nm, and the third absolute value is a value in a range of 5 nm to 30 nm.
5 . The light-emitting module of claim 3 , further comprising a molding layer covering the group of light emitters,
wherein the first peak wavelength and the first dominant wavelength are measured values for light generated in the first light emitter and transmitted through the molding layer, the second peak wavelength and the second dominant wavelength are measured values for light generated in the second light emitter and transmitted through the molding layer, and the third peak wavelength and the third dominant wavelength are measured values for light generated in the third light emitter and transmitted through the molding layer.
6 . The light-emitting module of claim 1 ,
wherein the first N-type semiconductor layer has a larger area than the first P-type semiconductor layer, and the second N-type semiconductor layer has a larger area than the second P-type semiconductor layer.
7 . The light-emitting module of claim 6 , wherein the area of the first N-type semiconductor layer is larger than that of the second N-type semiconductor layer.
8 . The light-emitting module of claim 7 , wherein an area difference between the first N-type semiconductor layer and first P-type semiconductor layer is greater than an area difference between the second N-type semiconductor layer and the second P-type semiconductor layer.
9 . The light-emitting module of claim 6 , wherein the at least three round edges have convexly curved shapes.
10 . The light-emitting module of claim 1 , wherein the group of light emitters further include a third light emitter for generating light having a third peak wavelength and a third dominant wavelength, and
wherein when the third light emitter is viewed from above, a third P-type semiconductor layer of the third light emitter includes at least four linear edges and at least four round edges having curved shapes, and a groove formed on any one of the linear edges and having a shape concavely depressed toward a center of the third P-type semiconductor layer.
11 . The light-emitting module of claim 1 , wherein the first light emitter further includes a first substrate connected to the first N-type semiconductor layer, and
when the first light emitter is viewed from above, an edge of the first substrate is spaced apart from an edge of the first N-type semiconductor layer and surrounds the edge of the first N-type semiconductor layer.
12 . The light-emitting module of claim 11 , wherein the second light emitter further includes a second substrate connected to on the second N-type semiconductor layer, and
when viewed from above, a smaller one of the first substrate or the second substrate has a size of 90% or more of a larger one of the first substrate or the second substrate.
13 . The light-emitting module of claim 1 , wherein the first light emitter further includes a first N-type electrode electrically connected to the first N-type semiconductor layer and a first P-type electrode electrically connected to the first P-type semiconductor layer, and
one of the first N-type electrode or the first P-type electrode includes a first extension extending horizontally in one direction.
14 . The light-emitting module of claim 13 , wherein the second light emitter further includes a second N-type electrode electrically connected to the second N-type semiconductor layer and a second P-type electrode electrically connected to the second P-type semiconductor layer, and
one of the second N-type electrode or the second P-type electrode includes a second extension extending horizontally in another direction different from the one direction.
15 . A light-emitting module, comprising:
a base substrate; and
a group of light emitters disposed on the base substrate to generate light,
wherein the group of light emitters include:
a first light emitter for generating light having a first peak wavelength and a first dominant wavelength, wherein the first light emitter includes a first P-type semiconductor layer and a first N-type semiconductor layer disposed on the base substrate;
a second light emitter for generating light having a second peak wavelength and a second dominant wavelength, wherein the second light emitter includes a second P-type semiconductor layer and a second N-type semiconductor layer sequentially stacked from the base substrate; and
a third light emitter for generating light having a third peak wavelength and a third dominant wavelength,
wherein, when the first light emitter is viewed from above, the first P-type semiconductor layer includes at least four linear edges, and at least three round edges having curved shapes, and the linear edges and the round edges are alternately arranged,
wherein a first peak difference value, which is an absolute value of a difference between the second peak wavelength and the first peak wavelength, is smaller than a second peak difference value, which is an absolute value of a difference between the third peak wavelength and the second peak wavelength, and
wherein the second peak wavelength is greater than the first peak wavelength, and the third peak wavelength is greater than the second peak wavelength.
16 . The light-emitting module of claim 15 , wherein a first dominant difference value, which is an absolute value of a difference between the second dominant wavelength and the first dominant wavelength, is greater than the first peak difference value.
17 . The light-emitting module of claim 15 , wherein a second dominant difference value, which is an absolute value of a difference between the third dominant wavelength and the second dominant wavelength, is smaller than the second peak difference value.
18 . The light-emitting module of claim 15 , wherein a third dominant difference value, which is an absolute value of a difference between the third dominant wavelength and the first dominant wavelength, is smaller than a third peak difference value, which is an absolute value of a difference between the third peak wavelength and the first peak wavelength.
19 . A light-emitting module, comprising:
a base substrate; and
a group of light emitters disposed on the base substrate to generate light,
wherein the group of light emitters include:
a first light emitter for generating light having a first peak wavelength and a first dominant wavelength, wherein the first light emitter includes a first P-type semiconductor layer and a first N-type semiconductor layer disposed on the base substrate;
a second light emitter for generating light having a second peak wavelength and a second dominant wavelength, wherein the second light emitter includes a second P-type semiconductor layer and a second N-type semiconductor layer sequentially stacked from the base substrate; and
a third light emitter for generating light having a third peak wavelength and a third dominant wavelength,
wherein, when the first light emitter is viewed from above, the first P-type semiconductor layer includes at least four linear edges, and at least three round edges having curved shapes, and the linear edges and the round edges are alternately arranged, and
wherein a first dominant difference value, which is an absolute value of a difference between the second dominant wavelength and the first dominant wavelength, is smaller than a second dominant difference value, which is an absolute value of a difference between the third dominant wavelength and the second dominant wavelength, and
wherein the second dominant wavelength is greater than the first dominant wavelength, and the third dominant wavelength is greater than the second dominant wavelength.
20 . The light-emitting module of claim 19 , wherein the first light emitter further includes a first substrate connected to the first N-type semiconductor layer, and
when the first light emitter is viewed from above, an edge of the first substrate is spaced apart from an edge of the first N-type semiconductor layer and surrounds the edge of the first N-type semiconductor layer.