Film forming apparatus and method for manufacturing part having film containing silicon
A film forming apparatus is disclosed. The apparatus comprises a chamber; an exhaust unit configured to reduce the pressure in the chamber to a predetermined vacuum level; a holder disposed in the chamber and configured to hold a film forming target member on which a film is to be formed; a supply unit configured to supply a film forming material containing silicon to a surface of the film forming target member; and a heat source configured to perform heating at the predetermined vacuum level to melt the supplied film forming material.
1 . A method for manufacturing a plasma resistant component having a film containing silicon comprising:
supplying a silicon-containing material onto a surface of a target under a reduced pressure environment; and
forming a plasma resistant film having high resistance to plasma on the surface of the target, by melting the silicon-containing material on the surface of the target using a heat source under the reduced pressure environment,
wherein the reduced pressure environment is at a pressure higher than or equal to 10 −6 Torr and lower than 10 −2 Torr.
2 . The method of claim 1 , wherein the heat source outputs an electron beam or laser to melt the silicon-containing material.
3 . The method of claim 1 , further comprising:
reducing pressure; and
introducing a reducing gas while or after reducing pressure,
wherein the supplied silicon-containing material is melted in a reducing gas atmosphere.
4 . The method of claim 3 , wherein the reducing gas comprises at least one selected from CO gas, H2 gas, CH4 gas, C3H8 gas and C4H10 gas.
5 . The method of claim 1 , further comprising introducing a dilution gas.
6 . The method of claim 5 , wherein the dilution gas is a noble gas.
7 . The method of claim 1 , wherein the silicon-containing material has a rod-shape and is supplied onto the surface of the target by being brought into contact with the surface.
8 . The method of claim 1 , wherein the silicon-containing material has a rod-shape and is supplied onto the surface of the target by being brought to the vicinity of the surface.
9 . The method of claim 1 , wherein the silicon-containing material has a rod-shape and is supplied onto the surface of the target from one or more directions.
10 . The method of claim 1 , wherein the silicon-containing material has a rod-shape and is supplied onto the surface of the target by a plurality of robot arms each of which grips the rod-shaped silicon-containing material to supply the rod-shaped silicon-containing material onto the surface.
11 . The method of claim 1 , wherein the silicon-containing material has a rod-shape and is supplied onto the surface of the target by one or more rollers.
12 . The method of claim 1 , wherein the silicon-containing material has a rod-shape, and
said supplying the silicon-containing material onto the surface of the target comprises:
sequentially supplying a plurality of rod-shaped silicon-containing materials to a tube;
heating end portions of the plurality of rod-shaped silicon-containing materials with a heater installed in the tube; and
connecting the end portions of the adjacent rod-shaped silicon-containing materials.
13 . The method of claim 1 , wherein said supplying the silicon containing material onto the surface of the target comprises:
melting the silicon-containing material in a heating container; and
providing the molten silicon-containing material to a nozzle to mold the molten silicon-containing material into a rod-shape.
14 . The method of claim 1 , wherein the target is configured to be a component in a chamber of a semiconductor manufacturing apparatus.
15 . The method of claim 1 , wherein the target is a consumable part in a chamber of a semiconductor manufacturing apparatus.
16 . The method of claim 15 , wherein the target is at least one of an edge ring, an upper electrode, an exhaust ring and a deposition shield.
17 . A method for manufacturing a plasma resistant component having a film containing silicon comprising:
supplying a silicon-containing material onto a surface of a target under a reduced pressure environment; and
forming a plasma resistant film having high resistance to plasma on the surface of the target, by melting the silicon-containing material on the surface of the target using a heat source under the reduced pressure environment,
providing a holder which holds the target; and
providing a supply source to supply the material containing silicon onto the surface of the target,
wherein in said melting of the silicon-containing material, a spot on the surface of the target onto which the silicon-containing material is supplied is heated by the heat source, and the material containing silicon is melted while the holder is, or the supply source and the heat source are driven such that the spot moves on the surface of the target.
18 . A method for manufacturing a plasma resistant component having a film containing silicon comprising:
supplying a silicon-containing material onto a surface of a target under a reduced pressure environment; and
forming a plasma resistant film having high resistance to plasma on the surface of the target, by melting the silicon-containing material on the surface of the target using a heat source under the reduced pressure environment,
wherein the silicon-containing material is in powder form and is supplied onto the surface of the target by free fall.