Quantum chip and quantum computer
A quantum chip and a quantum computer are disclosed to resolve problems such as high difficulty in preparing the quantum chip and a low yield rate. The quantum chip provided in the present disclosure includes a substrate, M subchips, a coupling structure, and a cavity mode suppression structure. Each subchip includes N quantum bits, and the M subchips are spaced apart on a surface of the substrate. The coupling structure is configured to implement an interconnection between the M subchips. The cavity mode suppression structure is disposed on an edge of each subchip and/or in a gap between the M subchips, and is configured to increase a cavity mode frequency of the quantum chip. In the quantum chip provided in the present disclosure, the quantum chip includes the M subchips, so that preparation difficulty is effectively reduced and a preparation yield rate is improved.
1 . A quantum chip, comprising:
a substrate;
M subchips, wherein each of the M subchips comprises N quantum bits,
and the M subchips are spaced apart on a surface of the substrate;
a coupling structure, configured to implement an interconnection between the M subchips; and
a cavity mode suppression structure, disposed on an edge of each of the M subchips and/or in a gap between the M subchips, and configured to increase a cavity mode frequency of the quantum chip, wherein
M is a positive integer greater than 1, and N is a positive integer greater than or equal to 1,
wherein the coupling structure comprises a first coupling structure and a second coupling structure;
the first coupling structure is disposed between two adjacent subchips, and is configured to implement a connection between the two adjacent subchips; and
the second coupling structure is disposed between two subchips disposed diagonally, and is configured to implement a connection between the two subchips disposed diagonally.
2 . The quantum chip according to claim 1 , wherein the coupling structure is a resonant cavity or a capacitor.
3 . The quantum chip according to claim 1 , wherein the cavity mode suppression structure is disposed on the edge of each of the M subchips; and
a plurality of ground solder joints is disposed on edges of the M subchips, the plurality of ground solder joints is electrically connected to the substrate, and the plurality of ground solder joints constitute the cavity mode suppression structure.
4 . The quantum chip according to claim 1 , wherein the cavity mode suppression structure is disposed in the gap between the M subchips; and
the cavity mode suppression structure is a metal body or a solid structure, of which a surface is provided with a conductive layer.
5 . The quantum chip according to claim 1 , wherein the cavity mode suppression structure is an arc-shaped protrusion, a circular, an oval, a rectangular, or other polygonal column or block structure.
6 . The quantum chip according to claim 1 , wherein the M subchips are disposed in a rectangular array.
7 . The quantum chip according to claim 1 , wherein the first coupling structure is connected to the second coupling structure.
8 . The quantum chip according to claim 1 , wherein the M subchips are disposed on the substrate in a flip-chip or wire bonding manner.
9 . The quantum chip according to claim 1 , further comprises a first electrode layer and a second electrode layer disposed on a surface of the substrate.
10 . The quantum chip according to claim 9 , wherein the first electrode layer is connected to a solder joint of one of the M subchips, to implement a connection between the first electrode layer and the subchip, and the second electrode layer is connected to a solder joint of another one of the M subchips, to implement a connection between the second electrode layer and the other subchip.
11 . The quantum chip according to claim 9 , further comprises a third electrode layer disposed on an upper surface of the substrate, wherein the first electrode layer and the second electrode layer are disposed on a lower surface of the substrate, the substrate is used as a dielectric layer, and the first electrode layer, the second electrode layer, and the third electrode layer form a coupling capacitor.
12 . The quantum chip according to claim 9 , further comprises a dielectric layer formed on upper surfaces of the first electrode layer and the second electrode layer, and a third electrode layer formed on an upper surface of the dielectric layer, wherein the first electrode layer and the second electrode layer are disposed on an upper surface of the substrate, and the first electrode layer, the second electrode layer, the dielectric layer, and the third electrode layer form a coupling capacitor.
13 . The quantum chip according to claim 1 , wherein the coupling structure and the cavity mode suppression structure are spaced apart on the substrate, or the coupling structure and the cavity mode suppression structure are stacked.
14 . A quantum computer, comprising a control system, a low-temperature transmission system, and a quantum chip, wherein the quantum chip includes:
a substrate;
M subchips, wherein each of the M subchips comprises N quantum bits,
and the M subchips are spaced apart on a surface of the substrate;
a coupling structure, configured to implement an interconnection between the M subchips; and
a cavity mode suppression structure, disposed on an edge of each of the M subchips and/or in a gap between the M subchips, and configured to increase a cavity mode frequency of the quantum chip, wherein
M is a positive integer greater than 1, and N is a positive integer greater than or equal to 1, and
the control system transmits one or more signals to the quantum chip by using the low-temperature transmission system,
wherein the coupling structure comprises a first coupling structure and a second coupling structure;
the first coupling structure is disposed between two adjacent subchips, and is configured to implement a connection between the two adjacent subchips; and
the second coupling structure is disposed between two subchips disposed diagonally, and is configured to implement a connection between the two subchips disposed diagonally.
15 . The quantum computer according to claim 14 , wherein the low-temperature transmission system comprises a refrigeration component and a low-temperature microwave circuit, the refrigeration component is configured to cool the low-temperature microwave circuit.
16 . The quantum chip according to claim 3 , wherein a distance between two adjacent ground solder joints of the plurality of ground solder joints is less than one tenth of an operating wavelength of the subchips.
17 . The quantum computer according to claim 14 , wherein the second coupling structure is connected to the first coupling structure.