Metasurface devices with multilayer passivation coatings
A tunable optical device includes a dielectric substrate with an array of metallic extension elements extending therefrom. The metallic extension elements are spaced closely together with subwavelength gaps between them. A multilayer passivation coating is applied to at least the opposing sidewalls and the top wall of each metallic extension element.
1 . A tunable optical device, comprising:
a dielectric substrate;
an array of metallic extension elements extending from the dielectric substrate and spaced from one another by less than a wavelength of an operational bandwidth to form subwavelength gaps between adjacent metallic extension elements, wherein each metallic extension element comprises a metal core having a base wall, opposing sidewalls, and a top wall;
a conductive barrier material positioned between the base wall of each metal core and the dielectric substrate;
a tunable dielectric material that has a tunable refractive index positioned within the gaps between adjacent metallic extension elements; and
a multilayer passivation coating applied to at least the opposing sidewalls and the top wall of the metal core of each respective metallic extension element, the multilayer passivation coating comprising:
a first passivation coating that exhibits strong adhesion properties to the metal core and prevents corrosion of the metal core; and
a second passivation coating with surface characteristics that facilitate alignment of the tunable dielectric material to increase a switching speed thereof.
2 . The device of claim 1 , wherein at least one of the first passivation coating and the second passivation coating is a diffusion barrier that prevents diffusion of metal from the metal core into the tunable dielectric material.
3 . The device of claim 1 , wherein the first passivation coating comprises one of: Al 2 O 3 , TiO 2 , HfO 2 , AlN, ZrO 2 , SiO 2 , and SiN, and wherein the second passivation coating comprises a different one of: Al 2 O 3 , TiO 2 , HfO 2 , AlN, ZrO 2 , SiO 2 , and SiN.
4 . The device of claim 1 , wherein the first passivation coating comprises SiN and the second passivation coating comprises HfO 2 .
5 . The device of claim 1 , wherein the tunable dielectric material comprises one or more of: liquid crystal, an electro-optic polymer, a chalcogenide glass, and a semiconductor material,
wherein the conductive barrier material comprises one of tantalum (Ta), tantalum nitride (TaN), and titanium nitride (TiN), and
wherein the metallic extension elements comprise one of copper pillars and copper rails.
6 . The device of claim 1 , further comprising a third passivation coating that is positioned between the first and second passivation coatings.
7 . The device of claim 6 , wherein the third passivation coating facilitates adhesion of the second passivation coating to the first passivation coating.
8 . The device of claim 6 , wherein the third passivation coating is a diffusion barrier that prevents diffusion of metal from the metal core into the tunable dielectric material.
9 . The device of claim 6 , wherein the third passivation coating comprises one of Al 2 O 3 , TiO 2 , HfO 2 , AlN, ZrO 2 , SiO 2 , and SiN.
10 . A tunable optical device, comprising:
a dielectric substrate;
an array of copper pillars extending from the dielectric substrate and spaced from one another by less than a wavelength of an operational bandwidth to form subwavelength gaps between adjacent copper pillars, wherein each copper pillar has a base wall, opposing sidewalls, and a top wall;
a conductive barrier material positioned between the base wall of each copper pillar and the dielectric substrate, wherein the conductive barrier material comprises one of tantalum, tantalum nitride, and titanium nitride;
liquid crystal positioned within the gaps between adjacent copper pillars; and
a multilayer passivation coating applied to at least the opposing sidewalls and the top wall of each copper pillar, the multilayer passivation coating comprising:
a first passivation coating of SiN adhered to the copper pillars; and
a second passivation coating adhered to the first passivation coating of SiN,
wherein the second passivation coating is in contact with the liquid crystal and prevents the liquid crystal from contacting the first passivation coating of SiN.
11 . The device of claim 10 , wherein the second passivation coating comprises one of Al 2 O 3 , TiO 2 , HfO 2 , AlN, ZrO 2 , SiO 2 , and SiN.
12 . The device of claim 10 , further comprising a third passivation coating that is positioned between the first passivation coating of SiN and the second passivation coating.
13 . The device of claim 12 , wherein the third passivation coating comprises one of Al 2 O 3 , TiO 2 , HfO 2 , AlN, ZrO 2 , SiO 2 , and SiN.
14 . The device of claim 10 , wherein the copper pillars are at least one of rectangular, circular, oval, hexagonal, and polygonal.
15 . A tunable optical device, comprising:
a dielectric substrate;
an array of metallic extension elements extending from the dielectric substrate and spaced from one another by less than a wavelength of an operational bandwidth to form subwavelength gaps between adjacent metallic extension elements, wherein each metallic extension element comprises a metal core having a base wall, opposing sidewalls, and a top wall;
a tunable dielectric material that has a tunable refractive index positioned within the gaps between adjacent metallic extension elements; and
a multilayer passivation coating applied to at least the opposing sidewalls and the top wall of the metal core of each respective metallic extension element, the multilayer passivation coating comprising:
a first passivation coating that:
(i) exhibits strong adhesion properties to the metal core, and
(ii) prevents corrosion of the metal core; and
a second passivation coating with surface characteristics that are at least:
(i) resistant to damage by manufacturing processes associated with deposition of the tunable dielectric material, and
(ii) resistant to damage by the tunable dielectric material.
16 . The device of claim 15 , further comprising:
a conductive barrier material positioned between the base wall of each metal core and the dielectric substrate.
17 . The device of claim 16 , wherein the conductive barrier material comprises one of tantalum (Ta), tantalum nitride (TaN), and titanium nitride (TiN).
18 . The device of claim 15 , wherein the first passivation coating comprises one of: Al 2 O 3 , TiO 2 , HfO 2 , AlN, ZrO 2 , SiO 2 , and SiN, and wherein the second passivation coating comprises a different one of: Al 2 O 3 , TiO 2 , HfO 2 , AlN, ZrO 2 , SiO 2 , and SiN.
19 . The device of claim 15 , wherein the tunable dielectric material comprises one or more of: liquid crystal, an electro-optic polymer, a chalcogenide glass, and a semiconductor material.
20 . The device of claim 15 , wherein the manufacturing processes associated with the deposition of the tunable dielectric material comprise an oxygen plasma cleaning, and wherein the second passivation coating is selected to protect the first passivation coating from being damaged by the oxygen plasma cleaning.
21 . The device of claim 15 , wherein the manufacturing processes associated with the deposition of the tunable dielectric material comprise a precleaning process, and wherein the second passivation coating is selected to protect the first passivation coating from being damaged by the precleaning process.
22 . The device of claim 15 , wherein the manufacturing processes associated with the deposition of the tunable dielectric material comprise depositing the tunable dielectric material via a pulse laser deposition process, and wherein the second passivation coating is selected to protect the first passivation coating from being damaged by the pulse laser deposition process.
23 . The device of claim 15 , wherein the manufacturing processes associated with the deposition of the tunable dielectric material comprise depositing the tunable dielectric material via a physical vapor deposition (PVD) process, and wherein the second passivation coating is selected to protect the first passivation coating from being damaged by the PVD process.
24 . The device of claim 15 , further comprising a third passivation coating that is positioned between the first and second passivation coatings.
25 . The device of claim 24 , wherein the third passivation coating facilitates adhesion of the second passivation coating to the first passivation coating.
26 . The device of claim 24 , wherein the third passivation coating is a diffusion barrier that prevents diffusion of metal from the metal core into the tunable dielectric.
27 . The device of claim 24 , wherein the third passivation coating comprises one of Al 2 O 3 , TiO 2 , HfO 2 , AlN, ZrO 2 , SiO 2 , and SiN.