Semiconductor memory device and method of manufacturing the same
First conductors and first insulators are alternately arranged one by one in a first direction in a first region. The first insulators and second insulators are alternately arranged one by one in the first direction in a second region. The memory pillar penetrates the first conductors and the first insulators in the first region and includes a semiconductor. A second conductor includes first to third portions. The second portion electrically couples the first portion and the third portion. A side surface of the third portion is electrically coupled to the semiconductor. A first film extends along the first direction in the second region. A second film contacts the first film, extends along the first direction, and includes carbon or metal. One of the second insulators includes a portion extending along the first and second films in the second region and being distanced from the second film.
1 . A semiconductor memory device, comprising:
a plurality of first conductors;
a plurality of first insulators, the first conductors and the first insulators being arranged one by one in an alternating manner in a first direction in a first region;
a plurality of second insulators, the first insulators and the second insulators being arranged one by one in an alternating manner in the first direction in a second region;
a memory pillar penetrating the first conductors and the first insulators in the first region, the memory pillar including a semiconductor and a film surrounding a side surface of the semiconductor;
a second conductor including a first portion, a second portion, and a third portion, the second portion electrically coupling the first portion and the third portion, a side surface of the third portion being electrically coupled to the semiconductor;
a first film extending along the first direction in the second region and having an angle with respect to the first direction; and
a second film contacting the first film, extending along the first direction, having an angle with respect to the first direction, and including carbon or metal, wherein
at least one of the second insulators includes a portion extending along the first film and the second film in the second region and being distanced from the second film.
2 . The device according to claim 1 , further comprising:
a third film extending along the first direction in the second region and having an angle with respect to the first direction; and
a fourth film contacting the third film, extending along the first direction, having an angle with respect to the first direction, and including carbon or metal, wherein
the first film contacts a side surface of the second film on a side of a second direction, and
a set of the first film and the second film is positioned closer to the second direction than a set of the third film and the fourth film.
3 . The device according to claim 2 , wherein
the set of the first film and the second film is aligned with the set of the third film and the fourth film along the second direction.
4 . The device according to claim 3 , wherein
an interval between an upper end of the second film and an upper end of the fourth film is smaller than an interval between a lower end of the second film and a lower end of the fourth film.
5 . The device according to claim 2 , further comprising:
a fifth film extending along the first direction in the second region; and
a sixth film extending along the first direction and contacting the fifth film, wherein
the first film and the second film are positioned closer to the first direction than the fifth and the sixth films and,
at least one of the second insulators includes a portion extending along the fifth and the sixth films in the second region.
6 . The device according to claim 5 , further comprising:
a seventh film extending along the first direction in the second region; and
an eighth film extending along the first direction and contacting a side surface of the seventh film on a side of the second direction, wherein
the fifth film contacts a side surface of the sixth film on a side of the second direction, and
a set of the fifth film and the sixth film is positioned closer to the second direction than a set of the seventh film and the eighth film.
7 . The device according to claim 6 , wherein
the set of the fifth film and the sixth film is aligned with the set of the seventh film and the eighth film along the second direction.
8 . The device according to claim 6 , wherein
a material of the first film, a material of the second film, a material of the third film, a material of the fourth film, a material of the fifth film, a material of the sixth film, a material of the seventh film, and a material of the eighth film differ from a material of the first insulators and a material of the second insulators.
9 . The device according to claim 6 , wherein
the first film, the third film, the fifth film, and the seventh film include silicon,
the second film, the fourth film, the sixth film, and the eighth film include carbon or metal,
the first insulators include silicon oxide, and
the second insulators include silicon nitride.
10 . The device according to claim 5 , wherein
the memory pillar includes a fourth portion and a fifth portion, the fifth portion being coupled to the fourth portion at a position closer to the first direction than the fourth portion,
an area of a section of the memory pillar intersecting the first direction changes toward the first direction, and discontinuously changes at a boundary between the fourth portion and the fifth portion, and
the fifth film and the sixth film are aligned with the boundary along the second direction.
11 . The device according to claim 5 , wherein
the memory pillar includes a fourth portion, a fifth portion, and a sixth portion, the fifth portion being coupled to the fourth portion at a position closer to the first direction than the fourth portion, the sixth portion being coupled to the fifth portion at a position closer to the first direction than the fifth portion, and
an area of a section of the memory pillar intersecting the first direction changes toward the first direction, and discontinuously changes at a boundary between the fourth portion and the fifth portion and at a boundary between the fifth portion and the sixth portion.
12 . The device according to claim 1 , wherein
a material of the first film and a material of the second film differ from a material of the first insulators and a material of the second insulators.
13 . The device according to claim 1 , wherein
the first film includes silicon,
the second film includes carbon or metal,
the first insulators include silicon oxide, and
the second insulators include silicon nitride.
14 . A method of manufacturing a semiconductor memory device, comprising:
forming a first insulator including a first opening;
forming a first film in a part of the first opening;
forming a second film in a part of the first opening on a side of a first direction;
forming a first hole that penetrates a plurality of third insulators and a plurality of fourth insulators and reaches the second film, the third insulators and the fourth insulators being formed on the first insulator and the second film and arranged one by one in an alternating manner in the first direction;
removing the second film to form a first space;
forming a second hole that penetrates a plurality of fifth insulators and a plurality of sixth insulators and reaches the first hole, the fifth insulators and the sixth insulators being formed on a side of the first direction of the third and fourth insulators and arranged one by one in an alternating manner in the first direction;
forming a layer stack including a semiconductor in the first hole, the first space, and the second hole;
exposing a first surface on a side of a second direction opposite to the first direction of the layer stack;
exposing a side surface of the semiconductor; and
forming a first conductor contacting the exposed side surface of the semiconductor.
15 . The method according to claim 14 , wherein
the exposing of the first surface in the second direction of the layer stack includes removing the first film from a side of the second direction.
16 . The method according to claim 15 , wherein
the layer stack further includes a seventh insulator covered by the semiconductor, and
the exposing of the side surface of the semiconductor includes:
partially removing the layer stack from a side of the second direction; and
removing a portion of the seventh insulator on a side of the second direction toward the first direction.
17 . The method according to claim 16 , further comprising:
after the forming of the first space and before the forming of the layer stack,
forming an eighth insulator in the first hole and a first portion in the first space; and
forming a third film on the eighth insulator, wherein
the forming of the second hole includes:
removing the third film; and
removing the eighth insulator.
18 . The method according to claim 17 , further comprising:
enlarging a part of the second hole after the forming of the third film and before the removing of the third film.
19 . The method according to claim 18 , wherein
the enlarging of the part of the second hole includes:
covering, with a fourth film, a part of a side surface of the second hole on a side of the second direction; and
partially removing a part of the side surface of the second hole not covered by the fourth film in a direction that enlarges the second hole.
20 . The method according to claim 15 , further comprising:
replacing each of the fourth insulators and the sixth insulators with a second conductor.