IP Library › Granted Patent US 12,745,473
Granted Patent B2
US 12,745,473 · App. 18/380,914 · Granted Sep 22, 2026

Image sensor including nano-photonic microlens array and electronic apparatus including the image sensor

Inventors: Sangeun Mun (Suwon-si, KR); Sookyoung Roh (Suwon-si, KR); Junho Lee (Suwon-si, KR)
Assignee: SAMSUNG ELECTRONICS CO., LTD.
H10F39/8063
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Quick Facts
Patent No.
US 12,745,473
App. No.
18/380,914
Granted
Sep 22, 2026
Kind
B2
Abstract

An image sensor includes a sensor substrate including a plurality of pixels for sensing incident light, and a nano-photonic microlens array including a plurality of nano-photonic microlenses corresponding respectively to the plurality of pixels, wherein each of the plurality of nano-photonic microlenses includes a plurality of nano-structures that are arranged two-dimensionally to condense incident light onto corresponding pixels, and a gap between two nano-structures that are arranged directly facing each other across a boundary between two adjacent nano-photonic microlenses is greater than an arrangement period of the plurality of nano-structures in each of the plurality of nano-photonic microlenses.

Claims (86)

1 . An image sensor comprising:

a sensor substrate including a plurality of pixels for sensing incident light; and

a nano-photonic microlens array including a plurality of nano-photonic microlenses, each of the plurality of nano-photonic microlenses corresponding respectively to one of the plurality of pixels,

wherein each of the plurality of nano-photonic microlenses includes a plurality of nano-structures that are arranged two-dimensionally to condense incident light onto its corresponding respective pixel,

wherein a gap between two nano-structures that are arranged directly facing each other across a boundary between two adjacent nano-photonic microlenses is greater than an arrangement period between the plurality of nano-structures in each of the plurality of nano-photonic microlenses,

wherein

when a width of one nano-photonic microlens in a first direction is W x , the arrangement period of the plurality of nano-structures in each of the plurality of nano-photonic microlenses in the first direction is P x , and a number of the nano-structures arranged in the first direction in one nano-photonic microlens is N x ,

an equation

P

x

=

W

x

N

x

-

α

is satisfied, and

α has a value greater than 0 at a periphery portion of the nanophotonic microlens array.

2 . The image sensor of claim 1 , wherein in an entire area of the nano-photonic microlens array,

the arrangement period of the plurality of nano-structures is consistent in each of the plurality of nano-photonic microlenses, and the gap between two nano-structures that are arranged directly facing each other across the boundary between two adjacent nano-photonic microlenses is consistent.

3 . The image sensor of claim 1 , wherein

when the gap in the first direction between two nano-structures that are arranged directly facing each other across the boundary between two adjacent nano-photonic microlenses is G x ,

an equation G x −P x =N x ·α is satisfied.

4 . The image sensor of claim 1 , wherein

the value of α is consistent throughout an entire area of the nano-photonic microlens array.

5 . The image sensor of claim 1 , wherein

the value of α is 0 at a center portion of the nano-photonic microlens array.

6 . The image sensor of claim 3 , wherein

the plurality of nano-structures are arranged so that the value of α is proportional to a chief ray angle (CRA) of incident light incident onto the nano-photonic microlens array, and

the value of α is gradually or discontinuously increased toward an edge of the nano-photonic microlens array.

7 . The image sensor of claim 1 , wherein

the nano-photonic microlens array includes a first section at a center portion and a second section at a periphery portion surrounding the first section,

wherein a peripheral arrangement period of the plurality of nano-structures in the plurality of nano-photonic microlenses arranged in the second section is less than a center arrangement period of the plurality of nano-structures in the plurality of nano-photonic microlenses arranged in the first section, and

a peripheral gap between two nano-structures that are arranged directly facing each other across a boundary between two adjacent nano-photonic microlenses in the second section is greater than a center gap between two nano-structures that are arranged directly facing each other across a boundary between two adjacent nano-photonic microlenses in the first section.

8 . The image sensor of claim 7 , wherein

the center arrangement period of the plurality of nano-structures in each of the plurality of nano-photonic microlenses and the center gap between two nano-structures that are arranged directly facing each other across the boundary between two adjacent nano-photonic microlenses are consistent in the first section, and

the peripheral arrangement period of the plurality of nano-structures in each of the plurality of nano-photonic microlenses and the peripheral gap between two nano-structures that are arranged directly facing each other across the boundary between two adjacent nano-photonic microlenses are consistent in the second section.

9 . The image sensor of claim 7 , wherein

the center arrangement period of the plurality of nano-structures in each of the plurality of nano-photonic microlenses is equal to the center gap between two nano-structures that are arranged directly facing each other across the boundary between two adjacent nano-photonic microlenses in the first section.

10 . The image sensor of claim 1 , wherein

a difference between the gap between two nano-structures that are arranged directly facing each other across the boundary between two adjacent nano-photonic microlenses and the arrangement period of the plurality of nano-structures in each of the plurality of nano-photonic microlens is about 0 to about 300 nm.

11 . The image sensor of claim 10 , wherein

the difference between the gap between two nano-structures that are arranged directly facing each other across the boundary between two adjacent nano-photonic microlenses and the arrangement period of the plurality of nano-structures in each of the plurality of nano-photonic microlens is greater than 0 and is equal to or less than about 30% of each pixel width.

12 . The image sensor of claim 1 , wherein in each of the plurality of nano-photonic microlenses, the plurality of nano-structures are arranged so that light that has passed through each of the nano-photonic microlenses has a convex-shaped phase profile.

13 . The image sensor of claim 12 , wherein

a phase profile of light that has passed through the plurality of nano-photonic microlens at a center portion of the nano-photonic microlens array has a symmetrical shape in a first direction and a symmetrical shape in a second direction.

14 . The image sensor of claim 12 , wherein

the plurality of nano-photonic microlenses arranged on a periphery portion of the nano-photonic microlens array are configured to condense light onto a center portion of a corresponding pixel by deflecting the light that is obliquely incident on the nano-photonic microlens array.

15 . The image sensor of claim 12 , wherein

the light that has passed through the plurality of nano-photonic microlenses arranged on a periphery portion of the nano-photonic microlens array has a phase profile, in which an inclined linear phase profile and a convex phase profile are added.

16 . The image sensor of claim 1 , wherein

the nano-photonic microlens array includes a first nano-photonic microlens array and a second nano-photonic microlens array disposed on the first nano-photonic microlens array,

the first nano-photonic microlens array includes a plurality of first nano-structures and the second nano-photonic microlens array includes a plurality of second nano-structures disposed on the first nano-structures, and

a first gap between two first nano-structures that are arranged directly facing each other across a boundary between two adjacent first nano-photonic microlenses is equal to a second gap between two second nano-structures that are arranged directly facing each other across a boundary between two adjacent second nano-photonic microlenses.

17 . The image sensor of claim 16 , wherein

in a periphery portion of the nano-photonic microlens array, the plurality of second nano-structures are shifted toward a center portion of the nano-photonic microlens array with respect to the plurality of first nano-structures.

18 . An image sensor comprising:

a sensor substrate including a plurality of pixels for sensing incident light; and

a nano-photonic microlens array including a plurality of nano-photonic microlenses, each of the plurality of nano-photonic microlenses corresponding respectively to one of the plurality of pixels,

wherein each of the plurality of nano-photonic microlenses includes a plurality of nano-structures that are arranged two-dimensionally to condense incident light onto its corresponding respective pixel,

wherein a gap between two nano-structures that are arranged directly facing each other across a boundary between two adjacent nano-photonic microlenses is greater than an arrangement period between the plurality of nano-structures in each of the plurality of nano-photonic microlenses, wherein

the arrangement period of the plurality of nano-structures is gradually reduced in each of the plurality of nano-photonic microlenses from a center portion toward an edge of the nano-photonic microlens array, and the gap between two adjacent nano-structures that are arranged directly facing across the boundary between two adjacent nano-photonic microlenses is gradually increased from the center portion toward the edge of the nano-photonic microlens array.

19 . An electronic apparatus comprising:

a lens assembly for forming an optical image of a subject;

an image sensor configured to convert the optical image formed by the lens assembly into an electrical signal; and

a processor configured to process a signal generated by the image sensor,

wherein the image sensor comprises:

a sensor substrate including a plurality of pixels for sensing incident light; and

a nano-photonic microlens array including a plurality of nano-photonic microlenses, each of the plurality of nano-photonic microlenses corresponding respectively to one of the plurality of pixels,

and each of the plurality of nano-photonic microlenses includes a plurality of nano-structures that are arranged two-dimensionally to condense incident light onto corresponding respective pixels, and

wherein a gap between two nano-structures that are arranged directly facing each other across a boundary between two adjacent nano-photonic microlenses is greater than an arrangement period between the plurality of nano-structures in each of the plurality of nano-photonic microlens,

wherein

when a width of one nano-photonic microlens in a first direction is W x , the arrangement period of the plurality of nano-structures in each of the plurality of nano-photonic microlenses in the first direction is P x , and a number of the nano-structures arranged in the first direction in one nano-photonic microlens is N x ,

an equation

P

x

=

W

x

N

x

-

α

is satisfied, and

α has a value greater than 0 at a periphery portion of the nanophotonic microlens array.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 17, 2023
From: MUN, SANGEUN; ROH, SOOKYOUNG; LEE, JUNHO
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 065253/0795 →
Priority Claims (1)
KR 10-2022-0144619 · Nov 2, 2022 · national
Continuity (1)
Related Publication 20240145509A1 · May 2, 2024
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