IP Library › Granted Patent US 12,745,511
Granted Patent B2
US 12,745,511 · App. 18/215,104 · Granted Sep 22, 2026

Display apparatus

Inventors: So-Hee Choi (Paju-si, KR); Jun-Ho Lee (Paju-si, KR); Sung-Bin Ryu (Paju-si, KR); Sung-Jin Lee (Paju-si, KR); Jei-Hyun Lee (Paju-si, KR)
Assignee: LG Display Co., Ltd.
H10K59/1213H10D86/423H10D86/431H10D86/60H10K59/1216G06F3/0446G09G3/3208G09G2300/0426G09G2300/0819G09G2300/0842H10D30/6723H10D86/421H10K50/844H10K59/124H10K59/221H10K59/38H10K59/40
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Quick Facts
Patent No.
US 12,745,511
App. No.
18/215,104
Granted
Sep 22, 2026
Kind
B2
Abstract

A display apparatus includes a substrate having a display area and a non-display area; a first transistor including a first semiconductor layer on the substrate, a first insulating layer on the first semiconductor layer, a first gate electrode on the first insulating layer and a second insulating layer on the first gate electrode, a second transistor including a second semiconductor layer on the substrate and a second gate electrode on the first insulating layer, and a third transistor including a third semiconductor layer on the substrate and a third gate electrode on the second insulating layer.

Claims (36)

1 . A display apparatus, comprising:

a substrate having a display area and a non-display area;

a first transistor including:

a first semiconductor layer on the substrate, the first semiconductor layer including oxide semiconductor,

at least a part of a first insulating layer on the first semiconductor layer,

a first gate electrode on the part of the first insulating layer and a second insulating layer on the first gate electrode;

a second transistor including a second semiconductor layer on the substrate and a second gate electrode on the first insulating layer; and

a third transistor including:

a third semiconductor layer on the substrate, the third semiconductor layer including oxide semiconductor,

at least another part of the first insulating layer on the third semiconductor layer,

at least a part of the second insulating layer on the first insulating layer, and

a third gate electrode on the part of the second insulating layer,

wherein a top surface of the second insulating layer is disposed below the third gate electrode and disposed over at least one of the first gate electrode and the second gate electrode.

2 . The display apparatus of claim 1 , wherein the first insulating layer is disposed on the second semiconductor layer, and the second insulating layer is disposed on the second gate electrode.

3 . The display apparatus of claim 1 , wherein a distance between the first semiconductor layer and the first gate electrode is a same distance as a distance between the second semiconductor layer and the second gate electrode.

4 . The display apparatus of claim 1 , wherein a distance between the first semiconductor layer and the first gate electrode is smaller than a distance between the third semiconductor layer and the third gate electrode.

5 . The display apparatus of claim 1 , wherein a distance between the second semiconductor layer and the second gate electrode is smaller than a distance between the third semiconductor layer and the third gate electrode.

6 . The display apparatus of claim 1 , wherein a capacitance between the third semiconductor layer and the third gate electrode is smaller than a capacitance between the first semiconductor layer and the first gate electrode, and wherein a capacitance between the third semiconductor layer and the third gate electrode is smaller than a capacitance between the second semiconductor layer and the second gate electrode.

7 . The display apparatus of claim 1 , wherein the first gate electrode is disposed in a different layer from the third gate electrode, and wherein the second gate electrode is disposed in a different layer from the third gate electrode.

8 . The display apparatus of claim 1 , further comprising:

a fourth gate electrode under the first semiconductor layer;

a fifth gate electrode under the second semiconductor layer; and

a sixth gate electrode under the third semiconductor layer.

9 . The display apparatus of claim 8 , wherein a distance between the fourth gate electrode and the first semiconductor layer is smaller than a distance between the fifth gate electrode and the second semiconductor layer, and wherein a distance between the fourth gate electrode and the first semiconductor layer is smaller than a distance between the sixth gate electrode and the third semiconductor layer.

10 . The display apparatus of claim 1 , further comprising:

a first source electrode and a first drain electrode on the first gate electrode;

a second source electrode and a second drain electrode on the second gate electrode; and

a third source electrode and a third drain electrode on the third gate electrode,

wherein the first source electrode is connected to a fourth gate electrode.

11 . The display apparatus of claim 1 , wherein the non-display area includes a gate driving part,

further comprising a fourth transistor in the gate driving part and including a fourth semiconductor layer, wherein the fourth semiconductor layer includes a polycrystalline semiconductor material.

12 . The display apparatus of claim 1 , further comprising:

an emitting device in the display area;

an encapsulation part on the emitting device;

a touch part on the encapsulation part; and

a color filter layer on the touch part or between the touch part and the encapsulation part.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 29, 2023
From: CHOI, SO-HEE; LEE, JUN-HO; RYU, SUNG-BIN; LEE, SUNG-JIN; LEE, JEI-HYUN
To: LG DISPLAY CO., LTD.
Reel/Frame 064107/0018 →
Priority Claims (1)
KR 10-2022-0080937 · Jun 30, 2022 · national
Continuity (1)
Related Publication 20240008311A1 · Jan 4, 2024
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