Semiconductor devices and methods of manufacture
Semiconductor devices and methods of manufacturing the semiconductor devices are described herein. A method includes forming a first opening through a dielectric layer, the first opening exposing a conductive region. A wet cleaning is used after the forming the first opening, and the first opening is treated after the wet cleaning the first opening, the treating the first opening comprising turning a sidewall treatment precursor and a bottom treatment precursor into a first plasma mixture, the sidewall treatment precursor being different from the bottom treatment precursor. The first opening is filled with a conductive material after the treating the first opening.
1 . A method of manufacturing a semiconductor device, the method comprising:
wet cleaning a first opening through a dielectric layer, the first opening exposing a conductive region;
treating the first opening with a first plasma mixture, the first plasma mixture simultaneously comprising a first plasma of hydrogen and a second plasma of oxygen;
performing one or more cleaning processes after treating the first opening; and
filling the first opening with a conductive material.
2 . The method of claim 1 , wherein the one or more cleaning processes comprises a first cleaning process which uses the first plasma without the second plasma.
3 . The method of claim 2 , wherein the one or more cleaning processes comprises a second cleaning process which uses the second plasma without the first plasma.
4 . The method of claim 3 , wherein the one or more cleaning processes comprises a third cleaning different from the first cleaning process, wherein the third cleaning process uses the first plasma without the second plasma.
5 . The method of claim 1 , wherein the conductive region comprises tungsten.
6 . The method of claim 5 , wherein the treating the first opening removes tungsten oxide.
7 . The method of claim 1 , wherein the treating the first opening repairs dangling bonds along sidewalls of the first opening.
8 . A method of manufacturing a semiconductor device, the method comprising:
cleaning a first opening through a dielectric layer, the first opening exposing a conductive region, wherein after the cleaning a first by-product is present along sidewalls of the opening and a second by-product different from the first by-product is present along a bottom of the opening;
removing the first by-product and the second by-product with a first plasma mixture, wherein the first plasma mixture simultaneously comprises a first plasma to remove the first by-product and a second plasma to remove the second by-product; and
performing one or more cleaning processes after the treating the first opening;
filling the first opening with a conductive material.
9 . The method of claim 8 , wherein the first plasma is generated from hydrogen.
10 . The method of claim 9 , wherein the second plasma is generated from oxygen.
11 . The method of claim 10 , wherein the removing is performed at least in part at a temperature of between about 100° C. and about 400° C.
12 . The method of claim 11 , wherein the removing is performed at least in part at a pressure of between about 0.5 Torr and about 6 Torr.
13 . The method of claim 8 , wherein the removing is performed at least for a time of between about 30 seconds and about 600 seconds.
14 . The method of claim 8 , wherein the removing the second by-product removes tungsten oxide.
15 . A method of manufacturing a semiconductor device, the method comprising:
wet cleaning a first opening through a dielectric layer, the first opening exposing a conductive region;
performing one or more cleaning processes a first time after the wet cleaning;
after the performing the one or more cleaning processes, treating the first opening with a first plasma mixture simultaneously comprising a first plasma to treat sidewalls of the first opening and a second plasma to treat a bottom of the first opening, the first plasma being different from the second plasma;
performing the one or more cleaning processes a second time after the treating the first opening; and
filling the first opening with a conductive material.
16 . The method of claim 15 , wherein during the treating the first opening the first time there is a flow ratio of oxygen to hydrogen of between about 5% to about 95%.
17 . The method of claim 15 , wherein the treating the first opening the first time is performed in a nitrogen free atmosphere.
18 . The method of claim 15 , wherein the treating the first opening the first time is performed in an inert gas free atmosphere.
19 . The method of claim 15 , wherein the treating removes SiOF from the sidewalls of the first opening.
20 . The method of claim 15 , wherein the treating removes SiON from the sidewalls of the first opening.