Optical devices
Optical devices are presented herein. In an embodiment, the optical devices comprise a first active layer of first optical components, a first metallization layer over the first active layer, a first capacitor located within the first metallization layer, a first bond layer over the first metallization layer, and a first semiconductor device bonded to the first bond layer.
1 . A semiconductor device comprising:
a first optical structure comprising:
a first active layer of first optical components;
a first metallization layer over the first active layer;
a first capacitor located within the first metallization layer;
a first bond layer over the first metallization layer; and
a first semiconductor device bonded to the first bond layer;
a second optical structure comprising:
a second active layer of second optical components;
a second metallization layer over the second active layer;
a second capacitor located within the second metallization layer;
a second bond layer over the second metallization layer; and
a second semiconductor device bonded to the second bond layer;
a capacitor structure bonded to both the first optical structure and the second optical structure, wherein the first capacitor is between the first semiconductor device and the capacitor structure and wherein the second capacitor is between the second semiconductor device and the capacitor structure, the capacitor structure comprising:
a third semiconductor substrate;
a deep trench capacitor extending into the semiconductor substrate; and
a third metallization layer over the third semiconductor substrate, the third metallization layer comprising third optical components.
2 . The semiconductor device of claim 1 , wherein the first optical components comprise:
active optical devices; and
a silicon waveguide.
3 . The semiconductor device of claim 2 , wherein the first capacitor is a metal-insulator-metal capacitor.
4 . The semiconductor device of claim 3 , further comprising a layer of optical waveguides on an opposite side of the first active layer from the first metallization layer.
5 . The semiconductor device of claim 4 , further comprising through device vias extending through the layer of optical waveguides and the first active layer.
6 . The semiconductor device of claim 1 , further comprising a second bond layer in electrical connection with through dielectric vias.
7 . The semiconductor device of claim 1 , wherein the first semiconductor device is bonded to the first bond layer using a dielectric-to-dielectric and metal-to-metal bond.
8 . A semiconductor device comprising:
a capacitor structure comprising:
a semiconductor substrate; and
a deep trench capacitor extending into the semiconductor substrate;
a first optical device comprising:
a first semiconductor device bonded to a first bond layer;
a first metallization layer on an opposite side of the first bond layer from the first semiconductor device;
a first active layer of first optical components on an opposite side of the first metallization layer from the first bond layer; and
a first capacitor between the first semiconductor device and the capacitor structure; and
a second optical device comprising:
a second semiconductor device bonded to a second bond layer;
a second metallization layer on an opposite side of the second bond layer from the second semiconductor device;
a second active layer of second optical components on an opposite side of the second metallization layer from the second bond layer; and
a second capacitor between the second semiconductor device and the capacitor structure.
9 . The semiconductor device of claim 8 , wherein the first active layer of the first optical components comprises:
active optical devices; and
at least one silicon waveguide.
10 . The semiconductor device of claim 8 , wherein the first capacitor is a multiple layer metal-insulator-metal structures.
11 . The semiconductor device of claim 8 , wherein the first capacitor is a deep trench capacitor located within a semiconductor substrate.
12 . The semiconductor device of claim 11 , further comprising a second bond layer located between the first capacitor and the first active layer.
13 . The semiconductor device of claim 11 , further comprising a layer of optical waveguides located between the first capacitor and the first active layer.
14 . The semiconductor device of claim 11 , further comprising a through dielectric via extending through the semiconductor substrate and the first active layer and at least partially into the first metallization layer.
15 . A semiconductor device comprising:
an interposer structure, the interposer structure comprising;
a semiconductor substrate;
a deep trench capacitor extending into the semiconductor substrate; and
a metallization layer over the semiconductor substrate, the metallization layer comprising first optical components;
a first optical structure bonded to the interposer structure, the first optical structure comprising:
a first semiconductor device;
a first active layer of first optical components;
a first metallization layer between the first semiconductor device and the first active layer; and
a first capacitor between the first semiconductor device and the interposer structure; and
a second optical structure bonded to the interposer structure, the second optical structure comprising:
a second semiconductor device;
a second active layer of second optical components;
a second metallization layer between the second semiconductor device and the second active layer; and
a second capacitor between the second semiconductor device and the interposer structure.
16 . The semiconductor device of claim 15 , wherein the interposer structure comprises a third capacitor.
17 . The semiconductor device of claim 16 , wherein a laser die, the first optical structure and the second optical structure are encapsulated with an encapsulant.
18 . The semiconductor device of claim 17 , further comprising an optical fiber aligned with an edge coupler within the metallization layer.
19 . The semiconductor device of claim 15 , wherein the deep trench capacitor is located between the second active layer and the interposer structure.
20 . The semiconductor device of claim 15 , wherein the first semiconductor device is a high bandwidth memory module.