Plated trench for parasitic capacitance control of vertical cavity surface emitting laser devices
A vertical-cavity surface-emitting laser (VCSEL) device includes a first distributed Bragg reflector (DBR) minor; a second DBR minor arranged on the first DBR mirror; an active layer arranged between the first DBR mirror and the second DBR mirror; and an oxidation layer arranged between the active layer and the second DBR mirror. The oxidation layer comprises an oxide aperture formed through the oxidation layer. A plurality of segmented oxidation trenches are arranged around an area in which the oxide aperture is formed and extend into the stacked structure to expose the oxidation layer for oxidation that forms the oxide aperture. A plurality of plating islands are spatially separated from each other. Each plating island vertically extends into a respective segmented oxidation trench of the plurality of segmented oxidation trenches and seals the respective segmented oxidation trench in order to prevent further oxidation of the oxidation layer.
1 . A vertical-cavity surface-emitting laser (VCSEL) device, comprising:
a device structure comprising a main surface, wherein the device structure comprises a stacked structure comprising:
a first distributed Bragg reflector (DBR) mirror;
a second DBR mirror arranged on the first DBR mirror;
an active layer comprising one or more quantum wells and configured to generate laser light, wherein the active layer is arranged between the first DBR mirror and the second DBR mirror; and
an oxidation layer arranged between the active layer and the second DBR mirror, wherein the oxidation layer comprises an oxide aperture formed through the oxidation layer for limiting a current flow of a current to the active layer, which generates light to form a laser beam;
a plurality of segmented oxidation trenches that extend from the main surface into the device structure to expose the oxidation layer for oxidation that forms the oxide aperture, wherein the plurality of segmented oxidation trenches are arranged around a periphery of a device area of the device structure in which the oxide aperture is formed; and
a plurality of plating islands that are spatially separated from each other, wherein each plating island of the plurality of plating islands vertically extends into a respective segmented oxidation trench of the plurality of segmented oxidation trenches and seals the respective segmented oxidation trench in order to prevent further oxidation of the oxidation layer,
the plurality of plating islands are arranged in a discontinuous arc around the periphery of the device area.
2 . The VCSEL of claim 1 , wherein each plating island of the plurality of plating islands laterally extends from the respective segmented oxidation trench over the main surface to seal the respective segmented oxidation trench.
3 . The VCSEL of claim 1 , wherein each plating island of the plurality of plating islands is formed over the main surface around an edge region of the respective segmented oxidation trench to seal the respective segmented oxidation trench.
4 . The VCSEL of claim 1 , wherein the plurality of segmented oxidation trenches are arranged in a discontinuous arc around the periphery of the device area.
5 . The VCSEL of claim 1 , wherein the plurality of plating islands are dimensioned to reduce a parasitic capacitance of the VCSEL.
6 . The VCSEL of claim 1 , wherein the plurality of plating islands are dimensioned to increase a bandwidth of the VCSEL.
7 . The VCSEL of claim 1 , wherein the current is configured to be injected through the second DBR and through the oxide aperture to the active layer to excite an active material of the active layer to generate the light.
8 . The VCSEL of claim 7 , wherein the light is configured to pass through the oxide aperture and exit the main surface as the laser beam.
9 . The VCSEL of claim 1 , wherein the plurality of plating islands comprises plating material that provides thermal protection.
10 . A vertical-cavity surface-emitting laser (VCSEL) device, comprising:
a stacked structure comprising a main surface, wherein the stacked structure comprises:
a first distributed Bragg reflector (DBR) mirror;
a second DBR mirror arranged on the first DBR mirror;
an active layer comprising one or more quantum wells and configured to generate laser light, wherein the active layer is arranged between the first DBR mirror and the second DBR mirror; and
an oxide layer arranged between the active layer and the second DBR mirror, wherein the oxide layer comprises an oxide aperture formed through the oxide layer for limiting a current flow of a current into the active layer, which generates light to form a laser beam;
a plurality of segmented oxidation trenches that extend from the main surface into the stacked structure to expose the oxide layer for oxidation that forms the oxide aperture, wherein the plurality of segmented oxidation trenches are arranged at a periphery of a device area of the stacked structure in which the oxide aperture is formed; and
a plurality of plating islands that are spatially separated from each other, wherein each plating island of the plurality of plating islands vertically extends into a respective segmented oxidation trench of the plurality of segmented oxidation trenches and seals the respective segmented oxidation trench in order to prevent further oxidation of the oxidation layer,
wherein the plurality of plating islands are arranged in a discontinuous arc around the periphery of the device area.
11 . The VCSEL of claim 10 , wherein each plating island of the plurality of plating islands laterally extends from the respective segmented oxidation trench over the main surface to seal the respective segmented oxidation trench.
12 . The VCSEL of claim 10 , wherein each plating island of the plurality of plating islands is formed over the main surface around an edge region of the respective segmented oxidation trench to seal the respective segmented oxidation trench.
13 . The VCSEL of claim 10 , wherein the plurality of segmented oxidation trenches are arranged in a discontinuous arc around the periphery of the device area.
14 . The VCSEL of claim 10 , wherein the plurality of plating islands are dimensioned to reduce a parasitic capacitance of the VCSEL.
15 . The VCSEL of claim 10 , wherein the plurality of plating islands are dimensioned to increase a bandwidth of the VCSEL.
16 . The VCSEL of claim 10 , wherein the plurality of segmented oxidation trenches and the plurality of plating islands are arranged circumferentially around the periphery of the device area.
17 . The VCSEL of claim 16 , wherein the light is laterally confined within the device area.
18 . The VCSEL of claim 10 , wherein the plurality of plating islands comprises plating material that provides thermal protection.
19 . A method of forming a vertical-cavity surface-emitting laser (VCSEL) device, comprising:
forming a stacked structure comprising a main surface, wherein the stacked structure comprises:
a first distributed Bragg reflector (DBR) mirror;
a second DBR mirror arranged on the first DBR mirror;
an active layer comprising one or more quantum wells and configured to generate laser light, wherein the active layer is arranged between the first DBR mirror and the second DBR mirror; and
an oxide layer arranged between the active layer and the second DBR mirror;
forming a plurality of segmented oxidation trenches that extend from the main surface into the stacked structure to expose the oxide layer for oxidation to form an oxide aperture that extends through a thickness dimension of the oxide layer, wherein the oxide aperture is configured to limit a current flow of a current into the active layer, which generates light to form a laser beam,
wherein the plurality of segmented oxidation trenches are arranged at a periphery of a device area of the stacked structure in which the oxide aperture is formed; and
forming a plurality of plating islands that are spatially separated from each other, wherein each plating island of the plurality of plating islands vertically extends into a respective segmented oxidation trench of the plurality of segmented oxidation trenches and seals the respective segmented oxidation trench in order to prevent further oxidation of the oxidation layer,
wherein the plurality of plating islands are arranged in a discontinuous arc around the periphery of the device area.
20 . The method of claim 19 , wherein each plating island of the plurality of plating islands is formed over the main surface around an edge region of the respective segmented oxidation trench to seal the respective segmented oxidation trench.