Method of forming a thin film with a low hydrogen content on a semiconductor device
A method of forming a thin film with a low hydrogen contents is provided by positioning a substrate inside a processing chamber, and supplying reacting materials into the chamber, chemisorbing a portion of the reacting materials onto the substrate. Then, a nitrogen (N 2 ) remote plasma treatment is performed to reduce the hydrogen content of thin film layer formed by chemisorption of the reacting materials on the substrate. Accordingly, a thin film is formed having a low hydrogen content, since the hydrogen bonds in the thin film layer formed by chemisorption of the reacting materials are removed.
1. A method of forming a thin film, comprising:
(a) positioning a substrate in an inside of a chamber;
(b) introducing first reacting materials into the chamber;
(c) forming a single atomic layer on the substrate by chemisorbing a portion of the first reacting materials onto the substrate;
(d) treating the single atomic layer with a first nitrogen (N 2 ) plasma treatment to reduce a hydrogen content in the single atomic layer;
(e) introducing second reacting materials into the chamber; and
(f) reacting a portion of the second reacting materials with the single atomic layer to form a thin film on the substrate.
2. The method of claim 1 , wherein the thin film includes nitride.
3. The method of claim 1 , wherein the step (d) further comprises removing non-chemisorbed first reacting materials from the chamber.
4. The method of claim 1 , further comprising removing non-chemisorbed first reacting materials from the chamber before the step (d).
5. The method of claim 1 , further comprising, after the step (f):
(g) treating the thin film with a second nitrogen (N 2 ) plasma treatment to reduce a hydrogen content in the thin film.
6. The method of claim 5 , wherein the step (g) further comprises removing non-chemisorbed second reacting materials from the chamber.
7. The method of claim 5 , further comprising removing non-chemisorbed second reacting materials from the chamber before the step (g).
8. The method of claim 1 , wherein the steps (b) to (f) are repeated at least once.
9. The method of claim 1 , wherein the step (d) further includes forming a nitrogen (N 2 ) plasma in a plasma generator located on an outside of the chamber.
10. The method of claim 5 , wherein the step (g) further includes forming a nitrogen (N 2 ) plasma in a plasma generator located on an outside of the chamber.
11. A method of forming a thin film, comprising:
(a) positioning a substrate in an inside of a chamber;
(b) introducing first reacting materials into the chamber;
(c) forming a single atomic layer on the substrate by chemisorbing a portion of the first reacting materials on the substrate;
(d) removing non-chemisorbed first reacting materials from the chamber;
(e) introducing second reacting materials into the chamber;
(f) forming a thin film on the substrate by reacting a portion of the second reacting materials with the single atomic layer; and
(g) treating the thin film, wherein the steps (b) to (g) are repeated at least once with a nitrogen (N 2 ) plasma treatment to reduce hydrogen content in the thin film.
12. The method of claim 11 , wherein the thin film includes nitride.
13. The method of claim 11 , wherein the step (g) further comprises removing non-reacted second reacting materials from the chamber.
14. The method of claim 11 , further comprising removing non-reacted second reacting materials from the chamber before the step (g).
15. The method of claim 11 , wherein the step (g) further includes forming a nitrogen (N 2 ) plasma in a plasma generator located on an outside of the chamber.