Imaging X-ray detector based on direct conversion

1. An X-ray detector comprising, as a detecting element, a semiconductor heterostructure where an undoped Germanium layer is enclosed between two oppositely doped Gallium Arsenide layers.

2. An X-ray detector according to claim 1 , wherein the thickness of the Germanium layer is between 200 micrometers and 2 millimeters, and the thickness of each of the Gallium Arsenide layers is between 1 and 5 micrometers.

3. An X-ray detector according to claim 1 , comprising a multitude of pixels for detecting a spatial distribution of X-rays incident on the X-ray detector.

4. An X-ray detector according to claim 3 , wherein:

the pixels comprise discrete pieces of the Gallium Arsenide layer on one side of the Germanium layer, with physical separation between adjacent pixels, and

the Gallium Arsenide layer on that side of the Germanium layer that does not comprise pixels is even.

5. An X-ray detector according to claim 3 , wherein each of the Gallium Arsenide layers comprises a number of stripes, the stripes of one Gallium Arsenide layer having a general orientation that is different than a general orientation of the stripes of the other Gallium Arsenide layer, so that intersection regions between stripes of different Gallium Arsenide layers constitute the pixels.

6. An X-ray detector according to claim 1 , being arranged to be used in room temperature.

7. An X-ray imaging arrangement, comprising:

a solid-state semiconductor detector for detecting X-rays and for converting a detected intensity of X-rays into a digital value, and

within the solid-state semiconductor detector a semiconductor heterostructure where an undoped Germanium layer is enclosed between two oppositely doped Gallium Arsenide layers.

8. An X-ray imaging arrangement according to claim 7 , wherein:

the X-ray imaging arrangement comprises a controllable X-ray source for controllably illuminating an object under study with X-rays, and

the solid-state semiconductor detector is arranged to detect X-rays that have passed through the object under study.

9. An X-ray imaging arrangement according to claim 7 , wherein the solid-state semiconductor detector is arranged to detect X-rays that come from distant, originally unspecified sources.

10. An X-ray imaging arrangement according to claim 7 , wherein:

the solid-state semiconductor detector comprises a multitude of pixels for detecting a spatial distribution of X-rays incident on the solid-state semiconductor detector

the solid-state semiconductor detector is arranged to convert a detected intensity of X-rays pixel-wise into a multitude of digital values and

the X-ray imaging arrangement is arranged to store such a multitude of digital values in the form of a digital image.

11. An X-ray imaging arrangement according to claim 7 , additionally comprising a cooling arrangement for cooling the solid-state semiconductor detector in order to reduce interference caused by thermally excited electrons in the Germanium layer.

12. An X-ray imaging arrangement according to claim 11 , wherein the solid-state semiconductor detector is arranged to convert also a detected energy of an incident X-ray photon into a digital value, and the X-ray imaging arrangement is arranged to produce a spectroscopic representation of a number of detected X-ray photons.

13. An X-ray imaging arrangement according to claim 7 , comprising a signal processing circuit bonded onto one of said Gallium Arsenide layers.

14. An X-ray imaging arrangement according to claim 7 , comprising a signal processing circuit processed directly onto one of said Gallium Arsenide layers.

15. A method for producing an X-ray detector, comprising the steps of:

producing a first doped Gallium Arsenide layer on a first side of an undoped Germanium plate, and

producing a second doped Gallium Arsenide layer on a second side of the undoped Germanium plate, which second doped Gallium Arsenide layer is differently doped than the first doped Gallium Arsenide layer.

16. A method according to claim 15 , comprising the steps of:

epitaxially growing a first Gallium Arsenide layer on a first side of an undoped Germanium plate,

implanting said first Gallium Arsenide layer with a dopant of a first type, said first type being either donor or acceptor,

epitaxially growing a second Gallium Arsenide layer on a second side of said undoped Germanium plate, and

implanting said second Gallium Arsenide layer with a dopant of a second type, which is opposite to the type of the dopant implanted into said first Gallium Arsenide layer.

17. A method according to claim 16 , comprising the steps of:

depositing a photoresist layer on one of the Gallium Arsenide layers,

exposing said photoresist through a mask that constitutes an array of pixels, and developing the exposed photoresist so that photoresist remains on an array of pixels on said one of the Gallium Arsenide layers, and

etching away Gallium Arsenide from between said pixels so that physical separations appear between adjacent pixels.

18. A method according to claim 15 , comprising the step of bonding a signal processing circuit onto one of said Gallium Arsenide layers.

19. A method according to claim 15 , comprising the step of processing a signal processing circuit directly onto one of said Gallium Arsenide layers.