Reticle focus measurement method using multiple interferometric beams
View Patent ↗A first set of interferometric measuring beams is used to determine a location of a patterned surface of a reticle and a reticle focus plane for a reticle that is back clamped to a reticle stage. A second set of interferometric measuring beams is used to determine a map of locations of the reticle stage during scanning in a Y direction. The two sets of interferometric measuring beams are correlated to relate the reticle focal plane to the map of the reticle stage. The information is used to control the reticle stage during exposure of a pattern on the patterned surface of the reticle onto a wafer.
1. A method comprising the steps of:
measuring location data of a pattern side of a reticle based on a first set of interferometer measuring beams;
measuring map data of a reticle stage during scanning of the reticle stage based on a second set of interferometer measuring beams; and
controlling the reticle stage during exposure of a wafer with a pattern on the pattern side of the reticle based on said location data and said map data.
2. The method of claim 1 , wherein said measuring location data step comprises the steps of:
reflecting a first beam of the first set of beams from a point adjacent a first side of the pattern on the reticle; and
reflecting a second beam of the first set of beams from a point adjacent a second side of the pattern on the reticle.
3. The method of claim 1 , wherein said measuring map data step comprises the steps of:
reflecting a first beam of the second set of beams from a point in a plane parallel to an X-Y plane of the reticle stage; and
reflecting a second beam of the second set of beams from a point in a plane parallel to the X-Y plane of the reticle stage.
4. The method of claim 1 , wherein said measuring map data step comprises the steps of:
reflecting a first beam of the second set of beams from a point in a plane parallel to an X-Y plane of the reticle stage; and reflecting a second beam of the second set of beams from a point in a plane parallel to a Y-Z plane of the reticle stage.
5. The method of claim 1 , wherein said measuring map data step comprises the steps of:
reflecting a first beam of the second set of beams from a point in a plane parallel to an X-Y plane of the reticle stage; and
reflecting a second beam of the second set of beams from a point in a plane oriented in the X-Y plane of the reticle stage.
6. The method of claim 1 , wherein said measuring map data step comprises the steps of:
reflecting a first beam of the second set of beams from a point in a plane parallel to an X-Y plane of the reticle stage; and
reflecting a second beam of the second set of beams from a point in a plane oriented in a Y-Z plane of the reticle stage.
7. The method of claim 1 , wherein said measuring map data step comprises the steps of:
reflecting a first beam of the second set of beams from a point in a plane oriented in an X-Y plane of the reticle stage; and
reflecting a second beam of the second set of beams from a point in a plane parallel to the X-Y plane of the reticle stage.
8. The method of claim 1 , wherein said measuring map data step comprises the steps of:
reflecting a first beam of the second set of beams from a point in a plane oriented in an X-Y plane of the reticle stage; and
reflecting a second beam of the second set of beams from a point in a plane parallel to a Y-Z plane of the reticle stage.
9. The method of claim 1 , wherein said measuring map data step comprises the steps of:
reflecting a first beam of the second set of beams from a point in a plane oriented in an X-Y plane of the reticle stage; and
reflecting a second beam of the second set of beams from a point in a plane oriented in the X-Y plane of the reticle stage.
10. The method of claim 1 , wherein said measuring map data step comprises the steps of:
reflecting a first beam of the second set of beams from a point in a plane oriented in an X-Y plane of the reticle stage; and
reflecting a second beam of the second set of beams from a point in a plane oriented in a Y-Z plane of the reticle stage.
11. The method of claim 1 , wherein said measuring location data step comprises the steps of:
determining a degree of freedom in a Z direction of the pattern side of the reticle, wherein the Z direction is normal to the pattern side of the reticle; and
determining a degree of freedom for an Ry rotation of the pattern side of the reticle, wherein the Ry rotation is about a scan axis of the reticle stage.
12. The method of claim 1 , further comprising the step of determining a reticle focal plane based on said measuring location data step.
13. The method of claim 12 , further comprising the steps of:
correlating the reticle focal plane to said measured map data of the reticle stage; and
tracking a position of the pattern side of the reticle based on said correlating step during said exposure of the wafer.
14. The method of claim 1 , further comprising the step of determining a predetermined reticle plane based on said measuring location data step.
15. The method of claim 14 , further comprising the steps of:
correlating the predetermined reticle plane to said measured map data of the reticle stage; and
tracking a position of the pattern side of the reticle based on said correlating step during said exposure of the wafer.
16. The method of claim 1 , wherein said measuring location data step is performed once between calibrations.
17. The method of claim 1 , wherein said measuring location data step is performed periodically between calibrations.
18. The method of claim 1 , wherein said measuring location data step is performed continuously.
19. A method comprising the steps of:
determining a plane of a clamped reticle on a reticle stage using a first interferometer;
determining positions of the reticle stage during scanning of the reticle stage using a second interferometer;
correlating the plane to the positions of the reticle stage; and
controlling the reticle stage during an exposure process based on said correlating step.