Aqueous stripping and cleaning composition
The present invention relates to aqueous compositions used to remove post etch organic and inorganic residue as well polymeric residues and contaminants from semiconductor substrates. The compositions are comprised of a water soluble organic solvent, a sulfonic acid and water.
1. A composition for removing etch and/or ash residue or contaminants from a semiconductor substrate comprising:
(A) from 45 to 90 wt % of a water soluble organic solvent,
(B) from 3 to 10 wt % of a sulfonic acid or its corresponding salt, and
(C) from 5 to 50 wt % water wherein all the ingredients contain therein are dissolved.
2. The composition as claimed in claim 1 , further comprising a corrosion inhibitor.
3. The composition as claimed in claim 1 , wherein the water soluble organic solvent is monoethanolamine, N-methylethanolamine, dimethylsulfoxide, dimethylacetamide or mixtures thereof.
4. The composition as claimed in claim 1 , wherein the sulfonic acid or its corresponding salt is wherein the sulfonic acid by the words p-toluene sulfonic acid, 1,5-naphthalene disulfonic acid, 4-ethylbenzene sulfonic acid, dodecylbenzene sulfonic acid or mixtures thereof.
5. The composition as claimed in claim 2 , wherein the corrosion inhibitor is gallic acid, catechol, benzotriazole, benzoic acid, malonic acid, ammonium malonate or mixtures thereof.
6. A composition for removing etch and/or ash residue or contaminants from a semiconductor substrate comprising:
(A) from 45 to 90 wt % of a water soluble organic solvent,
(B) from 3 to 10 wt % of a sulfonic acid or its corresponding salt,
(C) from 5 to 50 wt % water, and
(D) optionally from 0.1 to 15 wt % of a corrosion inhibitor wherein all the ingredients contain therein are dissolved.
7. A composition for removing etch and/or ash residue or contaminants from a semiconductor substrate comprising:
(A) from 45 to 90 wt % of a water soluble organic solvent,
(B) from 1 to 20 wt % of a sulfonic acid or its corresponding salt,
(C) from 5 to 50 wt % water, and
(D) from 0.1 to 20 wt % of a corrosion inhibitor wherein all the ingredients contain therein are dissolved.
8. The composition of claim 6 wherein component (B) comprises an alkytbenzene sulfonate having less than 9 carbon atoms.
9. The composition of claim 6 wherein amount of component (A) ranges from 50 to 90 wt %.
10. The composition of claim 9 wherein amount of component (A) ranges from 60 to 90 wt %.
11. The composition of claim 7 wherein component (B) comprises a alkylbenzene sulfonate having less than 9 carbon atoms.
12. The composition of claim 7 wherein amount of component (A) ranges from 50 to 90 wt %.
13. The composition of claim 12 wherein amount of component (A) ranges from 60 to 90 wt %.