IP Library › Granted Patent US 6,963,789
Granted Patent B2
US 6,963,789 · App. 10/253,010 · Granted Nov 8, 2005

Substrate processing apparatus control system and substrate processing apparatus

Assignee: Dainippon Screen Mfg. Co., Ltd.
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Quick Facts
Patent No.
US 6,963,789
App. No.
10/253,010
Granted
Nov 8, 2005
Kind
B2
Abstract

A controller is connected to a substrate processing apparatus and an exposure apparatus. A pilot substrate subjected to a series of processing as preprocessing is transported to an inspection unit. An inspection result determination part compares inspection results received from the inspection unit with substrate condition data so that a condition change instruction part changes the processing condition of each processing unit when no requirement is satisfied. This operation is so repeated that a processing control part executes actual processing according to recipe data when the inspection results satisfy the requirement. Thus, the efficiency a step of changing the processing condition of each processing part in response to the inspection results in the inspection part is improved in preprocessing executed in the substrate processing apparatus.

Claims (57)

1. A substrate processing apparatus control system controlling a substrate processing apparatus comprising:

a supply that provides at least one bare wafer stored in a carrier wherein each of said at least one bare wafer is constituted by a substrate with no pattern formed thereon;

a processing part performing prescribed processing on said at least one bare wafer,

an inspection part measuring the film thickness of resist applied to said at least one bare wafer; and

an operation part receiving manipulation instructions from an operator,

said processing part including a resist coating processing part coating said at least one bare wafer with said resist; and

a prebake part performing thermal processing on said at least one bare wafer with said resist,

said substrate processing apparatus control system comprising:

a) means performing control to transport said at least one bare wafer taken out from said carrier and subjected to resist coating processing and prebaking to said inspection part, while storing said at least one bare wafer in said carrier after completion of film thickness measurement at said inspection part, said means performing control being operative when said operator manipulates said operation part to select a bare wafer film thickness measurement mode as an inspection mode;

b) determination means receiving measurement results from said inspection part for determining whether or not a film thickness requirement is satisfied; and

c) condition change means changing a processing condition of said processing part when said determination means determines that said film thickness requirement is not satisfied.

2. A substrate processing apparatus comprising a processing part performing prescribed processing on at least one bare wafer, said processing part including a resist coating processing part coating said at least one bare wafer with resist, and a prebake part performing thermal processing on said at least one bare wafer with said resist, said at least one bare wafer being a substrate with no pattern thereon;

said substrate processing apparatus further comprising:

a) an operation part receiving manipulation instructions from an operator,

b) an inspection part measuring the film thickness of said resist applied to said at least one bare wafer;

c) means performing control to transport said at least one bare wafer taken out from a carrier and subjected to resist coating processing and prebaking to said inspection part, while storing said at least one bare wafer in said carrier after completion of film thickness measurement at said inspection part, said means performing control being operative when said operator manipulates said operation part to select a bare wafer film thickness measurement mode as an inspection mode;

d) determination means receiving measurement results from said inspection part for determining whether or not a film thickness requirement is satisfied; and

e) condition change means changing a processing condition of said processing part when said determination means determines that said film thickness requirement is not satisfied.

3. A system for controlling a substrate processing apparatus comprising:

a supply that provides at least one bare wafer stored in a carrier wherein each of said at least one bare wafer is constituted by a substrate with no pattern formed thereon;

a processing part performing prescribed processing on said at least one bare wafer, and

an inspection part measuring the film thickness of resist applied to said at least one bare wafer, said processing part including a resist coating processing part coating said at least one bare wafer with said resist,

a prebake part performing thermal processing on said at least one bare wafer with said resist, and

an operation part receiving manipulation instructions from an operator, a computer facility which comprises:

a) means performing control to transport said at least one bare wafer to said inspection part, while storing said at least one bare wafer in said carrier after completion of film thickness measurement at said inspection part, said means performing control being operative when said operator manipulates said operation part to select a bare wafer film thickness measurement mode as an inspection mode;

b) determination means receiving measurement results from said inspection part for determining whether or not a film thickness requirement is satisfied, and

c) condition change means changing a processing condition of said processing part when said determination part determines that said film thickness requirement is not satisfied.

4. A method for processing substrates, the method comprising the steps of:

a) receiving an input from an operation part to select an inspection mode;

b) when a bare wafer film thickness measurement mode is selected as said inspection mode in said step a), providing a supply of bare wafers taken out from a carrier, wherein each of said bare wafers is constituted by a substrate formed with no pattern thereon;

c) forming a resist layer of even thickness on said bare wafers;

d) after said step c), performing prebaking on said bare wafers;

e) after said step d), carrying out a thickness measurement of said resist formed on said bare wafer by taking at least one thickness measurement on the surface of said resist;

f) receiving measurement results of said measurements and determining whether or not a given film thickness requirement has been satisfied;

g) altering processing conditions of said method, when said thickness determination determines that said film thickness requirement has not been satisfied; and

h) after said step e), returning said bare wafers to said carrier.

5. The substrate processing apparatus control system according to claim 1 , wherein

when said operator manipulates said operation part to select a product lot measurement mode as said inspection mode, said means performing control is operative to transport substrates in a product lot taken out from said carrier and subjected to resist coating processing and prebaking to said inspection part, while carrying said substrates into an exposure apparatus after completion of film thickness measurement at said inspection part.

6. The substrate processing apparatus control system according to claim 5 , wherein

said condition change means comprises:

c-1) means displaying a confirmation message for condition change on a display comprised in said substrate processing apparatus before changing said processing condition of said processing part.

7. The substrate processing apparatus control system according to claim 6 , wherein

said condition change means comprises:

c-2) means making a user input the contents of change of said processing condition.

8. The substrate processing apparatus according to claim 2 , wherein

when said operator manipulates said operation part to select a product lot measurement mode as said inspection mode, said means performing control is operative to transport substrates in a product lot taken out from said carrier and subjected to resist coating processing and prebaking to said inspection part, while carrying said substrates into an exposure apparatus after completion of film thickness measurement at said inspection part.

9. The substrate processing apparatus according to claim 8 , wherein

said condition change means comprises:

e-1) means displaying a confirmation message for condition change on a display comprised in said substrate processing apparatus before changing said processing condition of said processing part.

10. The substrate processing apparatus according to claim 9 , wherein

said condition change means comprises:

e-2) means making a user input the contents of change of said processing condition.

11. The program according to claim 3 , wherein

when said operator manipulates said operation part to select a product lot measurement mode as said inspection mode, said means performing control is operative to transport substrates in a product lot taken out from said carrier and subjected to resist coating processing and prebaking to said inspection part, while carrying said substrates into an exposure apparatus after completion of film thickness measurement at said inspection part.

12. The method according to claim 4 , wherein

when a product lot measurement mode is selected as said inspection mode in said step a), substrates in a product lot taken out from said carrier are supplied in said step b), and

said substrates in said product lot are carried into an exposure device in said step h) after said step e).

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 23, 2002
From: BUN, TAMIHIRO; MURATA, KINYA; HASHINOKI, KENJI; KAMEI, KENJI; YOKONO, NORIAKI; SUGIMOTO, KENJI; MITSUHASHI, TSUYOSHI
To: DAINIPPON SCREEN MFG. CO., LTD.
Reel/Frame 013326/0285 →
Priority Claims (2)
JP 2001-291227 · Sep 25, 2001 · national
JP 2001-294185 · Sep 26, 2001 · national
Continuity (1)
Related Publication 20030060917A1 · Mar 27, 2003