IP Library › Granted Patent US 6,965,092
Granted Patent B2
US 6,965,092 · App. 10/074,287 · Granted Nov 15, 2005

Ultra fast rapid thermal processing chamber and method of use

Assignee: Hitachi Kokusai Electric, Inc.
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Quick Facts
Patent No.
US 6,965,092
App. No.
10/074,287
Granted
Nov 15, 2005
Kind
B2
Abstract

An apparatus and method and processing a semiconductor substrate that controls heating of the substrate to thereby control the depth of the junctions formed by impurities implanted in the semiconductor substrate by heating a device side of the semiconductor substrate to a reference temperature and heating the device side of the semiconductor substrate to a heat activation temperature that is greater than the reference temperature for an activation period, which provides sufficient energy to activate the impurities so that they become part of the lattice structure of the substrate while minimizing diffusion of the impurities across the substrate and reducing the temperature gradient in the substrate to minimize stress in the substrate.

Claims (7)

1. A semiconductor processing apparatus comprising:

a processing chamber adapted to support a semiconductor substrate therein;

a first energy source adapted for applying a first energy to a non-device side of the semiconductor substrate to heat the non-device side of the substrate to a reference temperature;

a second energy source adapted for applying a second energy to a device side of the semiconductor substrate to heat the device side to a heat activation temperature, said second energy source applying said second energy for an activation period sufficient to activate impurities in the substrate so that they become part of the lattice structure of the substrate while minimizing diffusion of the impurities across the substrate, end said reference temperature being less than said heat activation temperature to reduce the temperature gradient in the substrate to minimize stress in the substrate; and

a filter, said filter absorbing energy from said second energy source having a wavelength greater than about 0.9 microns.

2. The semiconductor processing apparatus according to claim 1 , said filter absorbing energy from said second energy source having a wavelength greater than about 0.7 microns.

3. The semiconductor processing apparatus according to claim 1 , wherein said filter comprises a fluid cooled filter.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 3, 2003
From: MICRO C TECHNOLOGIES, INC.
To: HITACHI KOKUSAI ELECTRIC, INC.
Reel/Frame 013797/0901 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 12, 2002
From: MAHAWILI, IMAD
To: MICRO C TECHNOLOGIES, INC.
Reel/Frame 012592/0817 →
Continuity (2)
Provisional Application 6026834000 · Feb 12, 2001
Related Publication 20020111043A1 · Aug 15, 2002