Assignment of Assignor's Interest

Recorded: 2003-03-03 Pages: 3

Assignor

MICRO C TECHNOLOGIES, INC.

Executed: 2003-02-24

Assignee

HITACHI KOKUSAI ELECTRIC, INC.

HIGASHI-NAKANO BLDG., 3-14-20 HIGASHI-NAKANO, NAKANO-KU, TOKYO, 164-8511, JAPAN

Covered Properties (2)

Chemistry for Boron Diffusion Barrier Layer and Method of Application in Semiconductor Device Fabrication

Patent: 6,800,830 →

Application: 09/931,595 →

Publication: US 2002/0023900

Ultra Fast Rapid Thermal Processing Chamber and Method of Use

Patent: 6,965,092 →

Application: 10/074,287 →

Publication: US 2002/0111043

Related Assignments (2)

Other recorded transfers of the patents in this record — the chain of ownership.