Method of manufacturing a semiconductor device
A first insulating film is formed on a base substrate, then a second insulating film is formed on the first insulating film, the second insulating film having a relative permittivity higher than that of the first insulating film. A gate electrode is formed on the second insulating film. The second insulating film forming includes first to sixth steps, and a cycle consisting of the first to sixth steps is repeated.
1. A method for manufacturing a semiconductor device, comprising:
forming a first insulating film on a semiconductor substrate;
forming a second insulating film on said first insulating film, said second insulating film having a relative permittivity higher than that of said first insulating film; and
forming a gate electrode on said second insulating film, wherein forming said second insulating film includes:
a first step of supplying a source gas to a film forming apparatus to cause a raw material to be adsorbed on a surface of said first insulating film;
a second step of purging the source gas from the film forming apparatus with an inert gas;
a third step of supplying an oxidizing gas to said film forming apparatus to oxidize said raw material adsorbed on said surface of said first insulating film;
a fourth step of purging the oxidizing gas from the film forming apparatus with an inert gas;
a fifth step of generating a reducing gas plasma within said film forming apparatus to produce active species, and causing the active species to react with an unoxidized portion of said raw material adsorbed on said surface of said first insulating film;
a sixth step of purging the active species from the film forming apparatus with an inert gas; and
repeating the first to sixth steps.
2. The method for manufacturing a semiconductor device according to claim 1 , wherein a cycle consists of performing the first to sixth steps once and then repeating the third to sixth steps n times, where n is an integer not exceeding 10, and including repeating the cycle until said second insulating film is formed to a predetermined thickness.
3. The method for manufacturing a semiconductor device according to claim 1 , wherein a cycle consists of performing the first to sixth steps once and then repeating the fifth and sixth steps n times, where n is an integer not exceeding 10, and including repeating the cycle until said second insulating film is formed to a predetermined thickness.
4. A method for manufacturing a semiconductor device, comprising:
forming a first insulating film on a semiconductor substrate;
forming a second insulating film on said first insulating film, said second insulating film having a relative permittivity higher than that of said first insulating film; and
forming a gate electrode on said second insulating film, wherein forming said second insulating film includes:
a first step of supplying a source gas to a film forming apparatus to cause a raw material to be adsorbed on a surface of said first insulating film;
a second step of purging the source gas from the film forming apparatus with an inert gas;
a third step of supplying an oxidizing gas to said film forming apparatus to oxidize said raw material adsorbed on said surface of said first insulating film;
a fourth step of purging the oxidizing gas from the film forming apparatus with an inert gas;
a fifth step of generating a reducing gas plasma within said film forming apparatus to produce active species, and causing the active species to react with an unoxidized portion of said raw material adsorbed on said surface of said first insulating film;
a sixth step of purging the active species from the film forming apparatus with an inert gas; and
repeating the first to sixth steps times and then repeating the first to fourth steps until said second insulating film is formed to a predetermined thickness, where n is an integer not exceeding 10.
5. The method for manufacturing a semiconductor device according to claim 4 , wherein a cycle consists of performing the first to sixth steps once and then repeating the third to sixth steps n times, where n is an integer 10, and including repeating the cycle n times and then repeating the first to fourth steps.
6. The method for manufacturing a semiconductor device according to claim 4 , wherein a cycle consists of performing the first to sixth steps once and then repeating the fifth and sixth steps n times, where n is an integer not exceeding 10, and including repeating the cycle n times and then repeating the first to fourth steps.
7. A method for manufacturing a semiconductor device, comprising:
forming a first insulating film on a semiconductor substrate;
forming a second insulating film on said first insulating film, said second insulating film including a mixture of at least two insulating films, one of said at least two insulating films having a relative permittivity higher than that of said first insulating film; and
forming a gate electrode on said second insulating film, wherein forming said second insulating film includes:
a first step of supplying a first source gas to a film forming apparatus to cause a first raw material to be adsorbed on a surface of said first insulating film;
a second step of purging the first source gas from the film forming apparatus with an inert gas;
a third step of supplying a first oxidizing gas to said film forming apparatus to oxidize said first raw material adsorbed on said surface of said first insulating film;
a fourth step of purging the first oxidizing gas from the film forming apparatus with an inert gas;
a fifth step of generating a first reducing gas plasma within said film forming apparatus to produce first active species, and causing the first active species to react with an unoxidized portion of said first raw material adsorbed on said surface of said first insulating film;
a sixth step of purging the first active species from the film forming apparatus with an inert gas;
a seventh step of supplying a second source gas to said film forming apparatus to cause a second raw material to be adsorbed on a surface of said first raw material that has been oxidized;
an eighth step of purging the second source gas from the film forming apparatus with an inert gas;
a ninth step of supplying a second oxidizing gas to said film forming apparatus to oxidize said second raw material adsorbed on said surface of said first raw material;
a tenth step of purging the second oxidizing gas from the film forming apparatus with an inert gas;
an eleventh step of generating a second reducing plasma within said film forming apparatus to produce second active species, and causing the second active species to react with an unoxidized portion of said second raw material adsorbed on said surface of said first raw material;
a twelfth step of purging the second active species from the film forming apparatus with an inert gas; and
repeating the first to twelfth steps.
8. The method for manufacturing a semiconductor device according to claim 7 , including repeating the first to twelfth steps n times and then repeating the first to fourth steps and the seventh to twelfth steps until said second insulating film is formed to a predetermined thickness, where n is an integer not exceeding 10.
9. The method for manufacturing a semiconductor device according to claim 7 , including repeating the first to twelfth steps n times and then repeating the first to sixth steps and the seventh to tenth steps until said second insulating is formed to a predetermined thickness, where n is an integer not exceeding 10.
10. A method for manufacturing a semiconductor device, comprising:
forming a first insulating film on a semiconductor substrate;
forming a second insulating film on said first insulating film, said second insulating film including a mixture of at least two insulating films, one of said at least two insulating films having a relative permittivity higher than that of said first insulating film; and
forming a gate electrode on said second insulating film, wherein forming said second insulating film includes:
a first step of supplying a first source gas to a film forming apparatus to cause a first raw material to be adsorbed on a surface of said first insulating film;
a second step of purging the first source gas from the film forming apparatus with an inert gas;
a third step of supplying a first oxidizing gas to said film forming apparatus to oxidize said first raw material adsorbed on said surface of said first insulating film;
a fourth step of purging the first oxidizing gas from the film forming apparatus with an inert gas;
a fifth step of generating a first reducing gas plasma to produce first active species, and causing the first active species to react with an unoxidized portion of said first raw material adsorbed on said surface of said first insulating film;
a sixth step of purging the first active species from the film forming apparatus with an inert gas;
a seventh step of supplying a second source gas to said film forming apparatus to cause a second raw material to be adsorbed on a surface of said first raw material that has been oxidized;
an eighth step of purging the second source gas from the film forming apparatus with an inert gas;
a ninth step of supplying a second oxidizing gas to said film forming apparatus to oxidize said second raw material adsorbed on said surface of said first raw material;
a tenth step of purging the second oxidizing gas from the film forming apparatus with an inert gas;
an eleventh step of generating a second reducing gas plasma to produce second active species, and causing the second active species to react with an unoxidized portion of said second raw material adsorbed on said surface of said first raw material;
a twelfth step of purging the second active species from the film forming apparatus with an inert gas; and
repeating the first to sixth steps a number of times and then repeating the seventh to twelfth steps.
11. The method for manufacturing a semiconductor device according to claim 10 , including repeating the first to sixth steps n times and then repeating the first to fourth steps number of times before repeating the seventh to twelfth steps, where n is an integer not exceeding 10.
12. The method for manufacturing a semiconductor device according to claim 10 , including repeating first to sixth steps a number of times and then repeating the seventh to twelfth steps n times before repeating the seventh to tenth steps a number of times, where n is an integer not exceeding 10.
13. The method for manufacturing a semiconductor device according to claim 10 , wherein a cycle consists of performing the first to sixth steps once and then repeating the third to sixth steps n times, where n is an integer not exceeding 10, and including repeating the cycle a number of times and then repeating the seventh to twelfth steps.
14. The method for manufacturing a semiconductor device according to claim 10 , wherein a cycle consists of performing the seventh to twelfth steps once and then repeating the ninth to twelfth steps n times, where n is an integer not exceeding 10, and including repeating the cycle a number of times.
15. The method for manufacturing a semiconductor device according to claim 10 , wherein a cycle consists of performing the first to sixth steps once and then repeating the fifth and sixth steps n times, where n is an integer not exceeding 10, and including repeating the cycle a number of times and then repeating the seventh to twelfth steps.
16. The method for manufacturing a semiconductor device according to claim 10 , wherein a cycle consists of performing the seventh to twelfth steps once and then repeating the first to twelfth steps n times, where n is an integer not exceeding 10, and including repeating the cycle a number of times.
17. The method for manufacturing a semiconductor device according to claim 1 , wherein said second insulating film contains at least one material selected from the group consisting of SiO 2 , Sc 2 O 3 , Y 2 O 3 , La 2 O 3 , Pr 2 O 3 , Nd 2 O 3 , Nb 2 O 3 , Sm 2 O 3 , EuO, Gd 2 O 3 , Tb 2 O 3 , Dy 2 O 3 , Ho 2 O 3 , Er 2 O 3 , Tm 2 O 3 , Lu 2 O 3 , ZrO 2 , TiO 2 , MoO 2 , WO 2 , MgO, ZnO, SnO, InO, Ta 2 O 3 , HfO 2 , and Al 2 O 3 .
18. The method for manufacturing a semiconductor device according to claim 1 , wherein the reducing gas plasma is produced by converting at least one reducing gas into a plasma, the at least one reducing gas being selected from the group consisting of ammonia, hydrogen, and nitrogen.