Test method and test apparatus for semiconductor device
A method for testing a semiconductor device, is disclosed, which comprises detecting a defect in a semiconductor wafer having a plurality of chips on each of which a plurality of semiconductor elements are formed, to detect those of the chips which have a defect, and carrying out a fist electrical characteristics test to a first chip without defect, and a second electrical characteristics test which is more detailed than the first electrical characteristics test to a second chip having the defect.
1. A method for testing a semiconductor device, comprising:
detecting a defect in a semiconductor wafer having a plurality of chips on each of which a plurality of semiconductor elements are formed, and detecting chips which have the defect; and
carrying out a first electrical characteristics test to a first chip without the defect, and a second electrical characteristics test, which is more detailed than the first electrical characteristics test, to a second chip having the defect, wherein the second electrical characteristics test has more test parameters than the first electrical characteristics test.
2. A method according to claim 1 , wherein the first electrical characteristics test is carried out to a predetermined ratio of the semiconductor elements in the first chip, and the second electrical characteristics test is carried out to all the elements in the second chip.
3. A method according to claim 2 , wherein the predetermined ratio is 95%.
4. A method according to claim 1 , wherein the defect detection is carried out two or more times in accordance with a semiconductor manufacturing process.
5. A method according to claim 4 , wherein the second electrical characteristics test is carried out to a chip in which the defect is detected in any of the detections.
6. A method according to claim 4 , wherein the first electrical characteristics test is carried out to a chip in which the defect is not detected in any of the detections.
7. A method according to claim 1 , wherein the defect detection is carried out two or more times in accordance with a semiconductor manufacturing process.
8. A method according to claim 7 , wherein the second electrical characteristics test is carried out to a chip in which the defect is detected in any of the detections.
9. A method according to claim 7 , wherein the first electrical characteristics test is carried out to a chip in which the defect is not detected in any of the detections.
10. A test apparatus for use in a process of manufacturing a semiconductor device, comprising:
a detector configured to detect a defect in a semiconductor wafer having a plurality of chips on each of which a plurality of semiconductor elements are formed, and to detect chips which have the defect; and
a test unit configured to carry out a first electrical characteristics test to a first chip without the defect, and a second electrical characteristics test, which is more detailed than the first electrical characteristics test, to a second chip having the defect, wherein the second electrical characteristics test has more test parameters than the first electrical characteristics test.
11. A test apparatus according to claim 10 , wherein the first electrical characteristics test is carried out to a predetermined ratio of the semiconductor elements in the first chip, and the second electrical characteristics test is carried out to all the elements in the second chip.
12. A test apparatus according to claim 11 , wherein the predetermined ratio is 95%.
13. A test apparatus according to claim 11 , wherein the defect detection is carried out two or more times in accordance with a semiconductor manufacturing process.
14. A test apparatus according to claim 13 , wherein the second electrical characteristics test is carried out to a chip in which the defect is detected in any of the detections.
15. A test apparatus according to claim 13 , wherein the first electrical characteristics test is carried out to a chip in which the defect is not detected in any of the detections.
16. A test apparatus according to claim 10 , wherein the defect detection is carried out two or more times in accordance with a semiconductor manufacturing process.
17. A test apparatus according to claim 16 , wherein the second electrical characteristics test is carried out to a chip in which the defect is detected in any of the detections.
18. A test apparatus according to claim 16 , wherein the first electrical characteristics test is carried out to a chip in which the defect is not detected in any of the detections.