Ion implantation method and method for manufacturing semiconductor device
View Patent ↗An object of the present invention is to provide an ion implantation method for shortening a down time of an ion implantation apparatus after exposure of a chamber and for improving throughput and a method for manufacturing a semiconductor device. Specifically, the object of the invention is to provide an ion implantation method that can improve throughput during an ion implantation step of B and a method for manufacturing a semiconductor device. The ion implantation method comprises the steps of: introducing an impurity imparting p-type conductivity and H 2 O in an ion source; ionizing the impurity imparting p-type conductivity; and implanting into a semiconductor film.
1. An ion implantation method comprising the steps of:
introducing an impurity imparting p-type conductivity and H 2 O into an ion source;
ionizing the impurity imparting p-type conductivity; and
implanting into a semiconductor film.
2. The ion implantation method according to claim 1 , wherein the impurity imparting p-type conductivity contains boron.
3. The ion implantation method according to claim 1 , wherein the impurity imparting p-type conductivity is diborane.
4. An ion implantation method comprising the steps of:
introducing an impurity imparting p-type conductivity and an inert gas added with H 2 O into an ion source;
ionizing the impurity imparting p-type conductivity; and
implanting into a semiconductor film.
5. The ion implantation method according to claim 4 , wherein the inert gas is nitrogen or argon.
6. The ion implantation method according to claim 4 , wherein the impurity imparting p-type conductivity contains boron.
7. The ion implantation method according to claim 4 , wherein the impurity imparting p-type conductivity is diborane.
8. A method for manufacturing a semiconductor device comprising the steps of:
introducing impurity imparting p-type conductivity and H 2 O into an ion source;
ionizing the impurity imparting p-type conductivity; and
implanting into a semiconductor film.
9. The method for manufacturing a semiconductor device according to claim 8 , wherein the impurity imparting p-type conductivity contains boron.
10. The method for manufacturing a semiconductor device according to claim 8 , wherein the impurity imparting p-type conductivity is diborane.
11. A method for manufacturing a semiconductor device comprising the steps of:
introducing impurity imparting p-type conductivity and an inert gas added with H 2 O into an ion source;
ionizing the impurity imparting p-type conductivity; and
implanting into a semiconductor film.
12. The method for manufacturing a semiconductor device according to claim 11 , wherein the inert gas is nitrogen or argon.
13. The method for manufacturing a semiconductor device according to claim 11 , wherein the impurity imparting p-type conductivity contains boron.
14. The method for manufacturing a semiconductor device according to claim 11 , wherein the impurity imparting p-type conductivity is diborane.