IP Library Granted Patent US 7,119,632
Granted Patent B2
US 7,119,632 · App. 10/912,731 · Granted Oct 10, 2006

High-frequency temperature-variable attenuator

Assignee: Smiths Interconnect Microwave Components, Inc.
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Quick Facts
Patent No.
US 7,119,632
App. No.
10/912,731
Granted
Oct 10, 2006
Kind
B2
Abstract

An absorptive temperature-variable microwave attenuator is produced using at least two temperature-variable (or fixed) resistors in series with a transmission line. The temperature coefficients of the temperature-variable resistors are selected so that the attenuator changes at a controlled rate with changes in temperature while attenuator remains relatively matched to the transmission line. In one embodiment, the resistors are thick-film resistors and a variety of temperature coefficients can be created for each resistor by properly selecting and mixing different inks when forming the resistors. Furthermore, attenuators can be created having either a negative temperature coefficient of attenuation or a positive temperature coefficient of attenuation.

Claims (29)

1. A temperature-dependent radio-frequency attenuator, comprising:

a first temperature-dependent resistor disposed in series with a transmission line, said first temperature-dependent resistor changing resistance with temperature according to a first temperature coefficient; and

a second temperature-dependent resistor disposed in series with said transmission line approximately one-quarter wavelength from said first temperature-dependent resistor at a desired frequency, said second temperature-dependent resistor changing resistance with temperature according to a second temperature coefficient, said first and second temperature coefficients configured such that said attenuator changes attenuation at a desired rate with changes in temperature

wherein said first temperature coefficient comprises a positive temperature coefficient of resistance and said second temperature coefficient comprises a negative temperature coefficient of resistance.

2. The temperature-dependent radio-frequency attenuator of claim 1 , wherein said transmission line comprises a coaxial transmission line.

3. The temperature-dependent radio-frequency attenuator of claim 1 , wherein a VSWR of said radio-frequency attenuator remains below 3 to 1 over a desired operating band.

4. The temperature-dependent radio-frequency attenuator of claim 1 , wherein said first temperature coefficient is substantially similar to said second temperature coefficient.

5. The temperature-dependent radio-frequency attenuator of claim 1 , wherein said first temperature-dependent resistor comprises a film resistor.

6. The temperature-dependent radio-frequency attenuator of claim 1 , wherein said first temperature-dependent resistor comprises a thin film resistor.

7. The temperature-dependent radio-frequency attenuator of claim 1 , wherein said first temperature-dependent resistor comprises a thick-film resistor.

8. The temperature-dependent radio-frequency attenuator of claim 1 , wherein said first temperature-dependent resistor comprises a printed ink resistor.

9. The temperature-dependent radio-frequency attenuator of claim 1 , wherein said attenuator has a negative temperature coefficient of attenuation.

10. The temperature-dependent radio-frequency attenuator of claim 1 , wherein said attenuator has a positive temperature coefficient of attenuation.

11. The temperature-dependent radio-frequency attenuator of claim 1 , wherein said transmission line comprises a microstrip transmission line.

12. The temperature-dependent radio-frequency attenuator of claim 1 , wherein said transmission line comprises a stripline transmission line.

13. The temperature-dependent radio-frequency attenuator of claim 1 , wherein said transmission line comprises a co-planer waveguide transmission line.

14. The temperature-dependent radio-frequency attenuator of claim 1 , wherein said transmission line comprises a grounded co-planar waveguide transmission line.

15. The temperature-dependent radio-frequency attenuator of claim 1 , further comprising a third temperature-dependent resistor disposed in series with said transmission line approximately one-quarter wavelength from said second temperature-dependent resistor such that said second temperature-dependent resistor lies electrically between said first temperature-dependent resistor and said third temperature-dependent resistor, said third temperature-dependent resistor changing resistance with temperature according to a third temperature coefficient.

16. The temperature-dependent radio-frequency attenuator of claim 15 , wherein a resistance of said first temperature-dependent resistor is approximately equal to a resistance of said third temperature-dependent resistor.

17. A temperature-dependent radio-frequency attenuator, comprising:

a first temperature-dependent resistor disposed in series with a transmission line, said first temperature-dependent resistor changing resistance with temperature according to a first temperature coefficient;

a second temperature-dependent resistor disposed in series with said transmission line approximately one-quarter wavelength from said first temperature-dependent resistor at a desired frequency, said second temperature-dependent resistor changing resistance with temperature according to a second temperature coefficient, said first and second temperature coefficients configured such that said attenuator changes attenuation at a desired rate with changes in temperature; and

a third temperature-dependent resistor disposed in series with said transmission line approximately one-quarter wavelength from said second temperature-dependent resistor such that said second temperature-dependent resistor lies electrically between said first temperature-dependent resistor and said third temperature-dependent resistor, said third temperature-dependent resistor changing resistance with temperature according to a third temperature coefficient,

wherein a resistance of said first temperature-dependent resistor is approximately equal to a resistance of said third temperature-dependent resistor, and a resistance of said second temperature-dependent resistor is approximately equal to twice said resistance of said third temperature-dependent resistor.

18. A temperature-dependent radio-frequency attenuator, comprising:

a first temperature-dependent resistor disposed in series with a transmission line, said first temperature-dependent resistor changing resistance with temperature according to a first temperature coefficient;

a second temperature-dependent resistor disposed in series with said transmission line approximately one-quarter wavelength from said first temperature-dependent resistor at a desired frequency, said second temperature-dependent resistor changing resistance with temperature according to a second temperature coefficient, said first and second temperature coefficients configured such that said attenuator changes attenuation at a desired rate with changes in temperature; and

a third temperature-dependent resistor disposed in series with said transmission line approximately one-quarter wavelength from said second temperature-dependent resistor such that said second temperature-dependent resistor lies electrically between said first temperature-dependent resistor and said third temperature-dependent resistor, said third temperature-dependent resistor changing resistance with temperature according to a third temperature coefficient,

wherein a resistance of said second temperature-dependent resistor is approximately equal to twice a resistance of said first temperature-dependent resistor and said third temperature-dependent resistor.

Assignments (2)
MERGER Recorded Mar 25, 2019
From: SMITHS INTERCONNECT MICROWAVE COMPONENTS, INC.
To: INTERCONNECT DEVICES, INC.
Reel/Frame 048682/0201 →
CHANGE OF NAME Recorded Mar 25, 2019
From: INTERCONNECT DEVICES, INC.
To: SMITHS INTERCONNECT AMERICAS, INC.
Reel/Frame 048682/0212 →
Continuity (1)
Related Publication 20060028290A1 · Feb 9, 2006