LDMOS transistor
An LDMOS transistor has a Schottky diode inserted at the center of a doped region of the LDMOS transistor. A Typical LDMOS transistor has a drift region in the center. In this case a Schottky diode is inserted at the center of this drift region which has the effect of providing a Schottky diode connected from source to drain in the forward direction so that the drain voltage is clamped to a voltage that is lower than the PN junction threshold, thereby avoiding forward biasing the PN junction. An alternative is to insert the Schottky diode at the well in which the source is formed, which is on the periphery of the LDMOS transistor. In such case the Schottky diode is formed differently but still is connected from source to drain in the forward direction to achieve the desired voltage clamping at the drain.
1. A device structure, comprising:
a substrate having a semiconductor region;
an LDMOS transistor structure in the semiconductor region having a substantially-continuous doped region for performing a transistor based function, the substantially-continuous doped region having a first doped region more heavily doped and shallower than the substantially-continuous doped region and of the same conductivity type as the substantially-continuous doped region and the substantially-continuous doped region functions as a drain; and
a Schottky diode substantially surrounded by the substantially-continuous doped region.
2. A device structure, comprising:
a substrate having a semiconductor region;
an LDMOS transistor structure in the semiconductor region having a substantially-continuous doped region for pefformina a transistor based function, the substantially-continuous doped region having a first doped region more heavily doped and shallower than the substantially-continuous doped region and of the same conductivity type as the substantially-continuous doped region; and
a Schottky diode substantially surrounded by the substantially-continuous doped region;
wherein the semiconductor region has a background doping of a first conductivity type and wherein the Schottky diode comprises:
a silicide region on the surface of the substrate; and
a second doped region that is in the semiconductor region, in contact with the silicide region, of the first conductivity type, and of a higher concentration than the semiconductor region.
3. The device structure of claim 2 , wherein the LDMOS transistor structure comprises:
an isolation region in the substantially-continuous doped region adjacent to the first doped region and spaced from an edge of the substantially-continuous doped region;
a third doped region of the same conductivity type as the semiconductor region spaced from the substantially continuous doped region so that there is a space between the third doped region and the substantially continuous doped region; and
a gate structure overlying a portion of the third doped region, the space, a portion of the substantially-continuous doped region, and a portion of the isolation region.
4. The device structure of claim 3 , wherein the conductivity type of the semiconductor region is P type.
5. The device structure of claim 3 , wherein the third doped region is further characterized as having a fourth doped region of the first conductivity type having a higher doping concentration than the semiconductor region as a source contact.
6. The device structure of claim 5 , wherein the third doped region is further characterized as having a fifth doped region spaced from the space and between the space and the fourth doped region.
7. A device structure comprising a transistor and a Schottky diode further characterized as having:
a substrate having a semiconductor region;
a gate structure of the transistor overlying the semiconductor region;
a first doped region at the surface of the semiconductor region of a first conductivity type formed in and at the surface of the semiconductor region, wherein a portion of the first doped region is under a portion of the gate structure and the first doped region includes a drain contact for the transistor;
a first Schottky terminal comprising a Schottky region in and at the surface of the semiconductor region that is adjacent with the first doped region; and
a second Schottky terminal comprising a metal on the Schottky region.
8. The device structure of claim 7 , wherein the Schottky region is contiguous with the first doped region.
9. The device structure of claim 8 , wherein the first doped region is further characterized as having an isolation region having a portion under the gate structure.
10. The device structure of claim 7 , further characterized as having a second doped region of the second conductivity type spaced from the first doped region, wherein a portion of the second doped region is under the gate structure.