Method and apparatus for chemical vapor deposition capable of preventing contamination and enhancing film growth rate
View Patent ↗Disclosed relates to a method for CVD comprises steps of injecting a purge gas, which doesn't either dissolve or generate byproducts by itself, into a reaction chamber where substrates are located; and supplying a source material of vapor phase participating directly in forming a film on the substrates to an inside of the reaction chamber, thus forming a protective curtain in the inside of the reaction chamber by a mutual diffusion-suppressing action between the purge gas and source material. Besides, the invention provides an apparatus for CVD including a susceptor located in a reaction chamber producing a vacuum, on which substrates are placed and a film deposition process is made, the apparatus comprising: a reactive gas confining means, established over the susceptor, having at least a source material supply port through which a source material is supplied and a plurality of openings perforated on a surface thereof; a purge gas supply port through which a purge gas is fed into an outside of the reactive gas confining means; and an exhaust port for discharging exhaust gasses generated in the reaction chamber.
1. An apparatus for CVD including a vertical type reaction chamber composed of a vertical wall, a ceiling, a bottom, and a susceptor located over the bottom of the reaction chamber, on which substrates are placed and a film deposition process is made as a result of chemical reactions with supplied source materials, the apparatus further comprising:
a reactive gas confining means for surrounding the susceptor, disposed in the reaction chamber, composed of a vertical wall and a ceiling, having a plurality of openings perforated on a surface thereof for communication of inside with outside of the reactive gas confining means, wherein the vertical wall and the ceiling of the reactive gas confining means are respectively separated from those of the reaction chamber at a distance, and the vertical wall is extended to the bottom of the reaction chamber such that a space having a pre-determined thickness is formed between the ceilings of the reaction chamber and the reactive gas confining means;
a plurality of ports for supplying source materials into the reactive gas confining means, formed on the ceiling of the reactive gas confining means, coupled to tubular conduits in communication with the ceiling of the reaction chamber such that the tubular conduits supply the source materials in the reaction chamber through the space and into the reactive gas confining means;
a purge gas supply port for supplying a purge gas formed on the ceiling of the reaction chamber; and
an exhaust port located at the inside of the reactive gas confining means for discharging exhaust gasses generated in the reaction chamber wherein the purge gas injected from the port formed on the ceiling of the reaction chamber flows through the space and into the reactive gas confining means via said plurality of perforated openings, whereby the flow rate of the purge gas into the reactive gas confining means is positively regulated so as to prevent contamination of the reactive gas confining means and to enhance a film growth rate on the substrates by increasing the concentration of the source materials in the vicinity of the substrates.