Processing apparatus and cleaning method
In a chamber ( 11 ), a SiOF film is formed on a wafer W using a plasma CVD method. A film remaining inside the chamber ( 11 ) is cleaned up using a gas containing NF 3 . A manometer ( 28 ) is prepared for the chamber ( 11 ). An end point of cleaning of the chamber ( 11 ) is detected by monitoring the pressure inside the chamber ( 11 ).
1. A processing apparatus comprising:
a chamber;
a gas source for supplying a gas for cleaning inside of said chamber;
a gas line for introducing the gas supplied from said gas source into said chamber;
an activator which is prepared in said gas line and activates the gas supplied from said gas source;
a locally-plasma-generation mechanism, arranged at a protruding section which is formed on said chamber, for locally generating plasma near the protruding section in said chamber;
an optical sensor for detecting light emission of a predetermined component in plasma generated by said locally-plasma-generation mechanism; and
a controller which detects an end point of a cleaning, based on data representing characteristics of the light detected by said optical sensor.
2. The processing apparatus according to claim 1 , further comprising a plasma generation mechanism, to provide a target object with plasma processing in said chamber.
3. The processing apparatus according to claim 1 , wherein said activator generates plasma of the gas.
4. The processing apparatus according to claim 1 , wherein the gas contains fluorine.
5. A processing apparatus comprising:
a chamber including a first and second windows;
a gas source for supplying a gas for cleaning inside of said chamber;
a gas line for introducing the gas supplied from said gas source into said chamber;
an activator which is prepared in said gas line and activates the gas supplied from said gas source;
a light source for irradiating laser light into said chamber through the first window;
an optical sensor which receives the laser light irradiated from said light source and passed successively through said chamber and the first and second windows, and which measures the intensity of the laser light received through a film deposited on the first and second windows to detect an interference state of the laser light changed in accordance with a thickness of the deposited film; and
a controller which determines an end point of cleaning of the inside of said chamber, by detecting a time when the intensity of the laser light passing through the deposited film becomes constant, based on data representing the interference state of the laser light measured by said optical sensor.
6. The processing apparatus according to claim 5 , wherein the first and second windows oppose each other.
7. The processing apparatus according to claim 5 , wherein the first and second windows are coated with a material which is resistant to plasma.
8. The processing apparatus according to claim 5 , wherein said optical sensor includes a photodiode.
9. The processing apparatus according to claim 5 , wherein the light is a single-wavelength laser beam.
10. The processing apparatus according to claim 5 , further comprising a plasma generation mechanism, to provide a target object with plasma processing in said chamber.
11. The processing apparatus according to claim 5 , wherein said activator generates plasma of the gas.
12. The processing apparatus according to claim 5 , wherein the gas contains fluorine.
13. A method for cleaning inside of a chamber, for performing predetermined processing for a target object thereinside, by supplying a gas activated outside said chamber into said chamber, said method comprising the steps of:
generating plasma locally near a protruding section, which is formed on said chamber, in said chamber, by a local-plasma-generator arranged at the protruding section;
detecting light emission of a predetermined component in plasma generated locally in said plasma; and
detecting an end point of cleaning of said chamber, based on data regarding characteristics of the light detected by said step of detecting.
14. The method according to claim 13 , wherein the predetermined processing is plasma processing.
15. The method according to claim 13 , wherein the gas is activated so as to be plasma.
16. A method for cleaning inside of a chamber with a window for performing predetermined processing for a target object thereinside, by supplying a gas activated outside said chamber into said chamber, and said method comprising the steps of:
emitting laser light passing through said chamber via the window;
measuring the intensity of the laser light having passed said chamber and the window on which a film is already deposited to measure the interference state of the laser light changed in accordance with a thickness of the deposited film; and
detecting an end point of cleaning of said chamber, by detecting a time when the intensity of the laser light passing through the deposited film becomes constant, based on data regarding the interference state of the laser light which is measured by said step of measuring.
17. The method according to claim 16 , wherein the predetermined processing is plasma processing.
18. The method according to claim 16 , wherein the gas is activated so as to be plasma.