Method for cleaning a plasma enhanced CVD chamber
View Patent ↗A method for plasma cleaning a CVD reactor chamber including providing a plasma enhanced CVD reactor chamber comprising residual deposited material; performing a first plasma process comprising an oxygen containing plasma; performing a second plasma process comprising an argon containing plasma; and, performing a third plasma process comprising a fluorine containing plasma.
1. A method for plasma cleaning a CVD reactor chamber to reduce a required cleaning time and an amount of fluorine containing gas comprising the steps of:
providing a plasma enhanced CVD reactor chamber comprising residual deposited material and a plasma treatment volume;
performing a first plasma process comprising an oxygen containing plasma formed from plasma source gases free of nitrogen and fluorine;
performing a second plasma process comprising an argon containing plasma following said first plasma process; and,
performing a third plasma process comprising a fluorine containing plasma following said second plasma process.
2. The method of claim 1 , wherein the third plasma process comprises a plasma source gas comprising nitrogen trifluoride (NF 3 ).
3. The method of claim 2 , wherein the plasma source gas comprises greater than about 90% by volume of nitrogen trifluoride (NF 3 ) with respect to said plasma treatment volume.
4. The method of claim 2 , wherein the plasma source gas consists essentially of nitrogen trifluoride (NF 3 ).
5. The method of claim 1 , wherein the first plasma process plasma source gases comprise greater than about 80% by volume of oxygen (O 2 ) with respect to said plasma treatment volume.
6. The method of claim 5 , wherein the second plasma process comprises a plasma formed from plasma source gases free of nitrogen and fluorine.
7. The method of claim 1 , wherein the first plasma process plasma source gases comprises an inert gas selected from the group consisting of argon and helium.
8. The method of claim 1 , wherein the first plasma process source gases consist essentially of oxygen (O 2 ) gas.
9. The method of claim 1 , wherein the second plasma process comprises a plasma formed front plasma source gases comprising argon at greater than about 90% by volume with respect to said plasma treatment volume.
10. The method of claim 1 , wherein the second plasma process comprises a plasma formed from a plasma source gas consisting essentially of argon.
11. The method of claim 1 , wherein the residual deposited material comprises material selected from the group consisting of organo-silanes, organo-siloxanes, and organo-silicate glass (OSG).
12. The method of claim 1 , wherein the plasma enhanced CVD reactor chamber comprises one of a PECVD, HDP-CVD, and downstream plasma reactor chamber.
13. A method for plasma cleaning a CVD reactor chamber to reduce a required cleaning time and an amount of fluorine containing gas comprising the steps of:
providing a plasma enhanced CVD reactor chamber comprising residual deposited material and a plasma treatment volume;
performing a first plasma process comprising an oxygen containing plasma formed from plasma source gases free of fluorine and nitrogen;
performing in-situ following said first plasma process a second plasma process comprising an argon containing plasma formed from plasma source gases free of fluorine and nitrogen; and,
performing in-situ following said second plasma process a third plasma process comprising a plasma formed from a nitrogen-fluoride (N x F y ) containing plasma source gas.
14. The method of claim 13 , wherein the nitrogen-fluoride containing plasma source gas comprises nitrogen trifluoride (NF 3 ) at greater than about 90% by volume with respect to said plasma treatment volume.
15. The method of claim 13 , wherein the first plasma process plasma source gases comprise greater than about 80% by volume of oxygen (O 2 ) with respect to said plasma treatment volume.
16. The method of claim 15 , wherein the first plasma process plasma source gases consists essentially of oxygen (O 2 ).
17. The method of claim 13 , wherein the second plasma process plasma source gases comprise argon at greater than about 90% by volume with respect to said plasma treatment volume.
18. The method of claim 13 , wherein the second plasma process plasma source gases consist essentially of argon.
19. The method of claim 13 , wherein the residual deposited material comprises material selected from the group consisting of organo-silanes, organo-siloxanes, and organo-silicate glass (OSG).
20. The method of claim 13 , wherein the plasma enhanced CVD reactor chamber comprises one of a PECVD, HDP-CVD, and downstream plasma reactor chamber.