Productivity enhancing thermal sprayed yttria-containing coating for plasma reactor
Components of semiconductor processing apparatus comprise thermal sprayed yttria-containing coatings that provide erosion, corrosion and/or corrosion-erosion resistance in plasma atmospheres. The coatings can protect substrates from physical and/or chemical attack.
1. A component of a semiconductor processing apparatus, comprising:
an aluminum substrate of an aluminum material having a sealed anodized surface; and
a thermal sprayed coating consisting essentially of yttria disposed over the sealed anodized surface without an intermediate layer of another material disposed between the coating and the sealed anodized surface of the substrate, the coating forming an outermost surface of the component.
2. The component of claim 1 , which is at least one component selected from the group consisting of a chamber liner, a gas distribution plate, a gas ring, a pedestal, an electrostatic chuck and a plasma focus ring.
3. The component of claim 1 , wherein the coating has a thickness of from about 0.001 inch to 0.1 inch.
4. The component of claim 1 , wherein the coating is formed to have an arithmetic mean surface roughness (Ra) effective to promote adhesion of polymer deposits on the coating.
5. The component of claim 4 , wherein the coating an arithmetic mean surface roughness (Ra) from about 120 to about 250 micro-inch.
6. The component of claim 1 , which consists of the aluminum substrate and the thermal sprayed coating.
7. The component of claim 1 , wherein the anodized surface has not been roughened by particle blasting.
8. The component of claim 1 , wherein the coating has a tensile bond strength of about 7000 psi, a hardness from about 200 to about 800 HV30 and a crystal structure that is at least about 95% cubic.
9. A chamber wall of a semiconductor processing apparatus, comprising:
an anodized aluminum substrate of an aluminum material having a sealed anodized surface; and
a thermal sprayed coating consisting essentially of yttria disposed directly on the sealed anodized surface, the coating forming an outermost surface of the chamber wall.
10. The chamber wall of claim 9 , wherein the coating is formed to have an arithmetic mean surface roughness (Ra) that promotes adhesion of polymer deposits.
11. The chamber wall of claim 9 , which consists of the aluminum substrate and the thermal sprayed coating.
12. The chamber wall of claim 9 , wherein the anodized surface has not been roughened by particle blasting.
13. The chamber wall of claim 9 , wherein the coating has a tensile bond strength of about 7000 psi, a hardness from about 200 to about 800 HV30 and a crystal structure that is at least about 95% cubic.
14. A plasma etch reactor, comprising:
at least one component including:
an aluminum substrate of an aluminum material having a sealed anodized surface; and
a thermal sprayed coating consisting essentially of yttria disposed directly on the sealed anodized surface without an intermediate layer of another material disposed between the coating and the sealed anodized surface of the substrate, the coating forming an outermost surface of the component.
15. The plasma etch reactor of claim 14 , wherein the component is a chamber wall and the plasma etch reactor includes a plasma generating source which inductively couples radio frequency energy into the reactor.
16. The plasma etch reaction of claim 14 , wherein the coating has an arithmetic mean surface roughness (Ra) effective to promote adhesion of polymer deposits on the coating.
17. The plasma etch reactor of claim 14 , wherein the component consists of the aluminum substrate and the thermal sprayed coating.
18. The plasma etch reactor of claim 14 , wherein the anodized surface has not been roughened by particle blasting.
19. The plasma etch reactor of claim 14 , wherein the coating has a tensile bond strength of about 7000 psi, a hardness from about 200 to about 800 HV30 and a crystal structure that is at least about 95% cubic.