Device for generating and/or influencing electromagnetic radiation from a plasma
View Patent ↗A device generates and/or influences electromagnetic radiation from a plasma, for the lithographic production of semiconductor elements. For example, the device generates and/or reflects EUV-radiation for EUV-lithography. In a first example, a magnetic means ( 10 ) generates at least one inhomogeneous magnetic field ( 11 ) and is provided as means for the targeted screening of at least one surface of the device ( 1; 5; 12 ) and/or another component ( 5; 12 ) from the charge carriers in the plasma ( 3 ).
1. A device for generating and/or influencing electromagnetic radiation from a plasma for the lithographic fabrication of semiconductor components, the device comprising:
a radiation system which comprises a radiation source containing the plasma for emitting electromagnetic radiation, the radiation system comprising at least one associated component for at least one of generating or influencing the emitted electromagnetic radiation; and
a magnetic field generator that generates at least one inhomogeneous magnetic field for the shielding of at least one component of the device from charge carriers of the plasma, the magnetic field generator being arranged on the component of the device and the gradient of the inhomogeneous magnetic field pointing essentially from the plasma to the component.
2. The device as claimed in claim 1 , wherein the charge carriers of the plasma are mirrored at the inhomogeneous magnetic field.
3. The device as claimed in claim 1 , wherein the magnetic field lines of the magnetic field are oriented such that they essentially point from the component toward the plasma.
4. The device as claimed in claim 1 , wherein at least one magnetic field is localized and generated in such a way that the function of the device is shielded from effects of the magnetic field generator.
5. The device as claimed in claim 1 , wherein the magnetic field generator has at least one magnet, the at least one magnet comprising a permanent magnet, at least one coil, at least one coil with a pole shoe, and/or at least one electromagnet.
6. The device as claimed in claim 5 , wherein the at least one magnetic means comprises a superconducting magnet.
7. The device as claimed in claim 5 , wherein the at least one magnet is arranged in and/or at an inlet for a plasma-forming substance.
8. The device as claimed in claim 7 , wherein the at least one magnet is arranged concentrically with respect to the entry direction of the plasma-forming substance.
9. The device as claimed in claim 1 , further comprising:
an inlet for a plasma-forming substance; and
at least one magnet that is acentric with respect to the inlet.
10. The device as claimed in claim 1 , further comprising at least one mirror device for capturing EUV radiation emitted by the plasma.
11. The device as claimed in claim 10 , wherein the mirror device at least partly has a multilayer layer.
12. The device as claimed in claim 10 , wherein at least one magnetic device is formed on a side of the mirror device that is remote from the plasma.
13. The device as claimed in claim 12 , wherein a plurality of magnets are formed on that side of the mirror device that is remote from the plasma, the magnets being adapted at least partly to the form of the mirror device.
14. The device as claimed in claim 13 , wherein the magnets that are adapted at least partly to the form of the mirror device are arranged at a small distance from the mirror device.
15. The device as claimed in claim 13 , wherein the magnets that are adapted at least partly to the form of the mirror device all point with the same magnetic polarity toward the mirror device.
16. The device as claimed in claim 1 , further comprising a magnetic device that has a control device for the generation of a temporally variable inhomogeneous magnetic field.
17. The device as claimed in claim 1 , further comprising a discharge device to generate the plasma.
18. The device as claimed in claim 17 , wherein the discharge device comprises a pulsed Nd:YAG laser.
19. The device as claimed in claim 1 , wherein the plasma is formed in front of an exit opening of an inlet means.
20. An apparatus for lithographic fabrication of semiconductor components, the apparatus comprising:
a radiation source containing a plasma for emitting electromagnetic radiation, a radiation system comprising at least one associated component for at least one of generating or influencing the emitted electromagnetic radiation; and
a magnetic field generator encircling said radiation source, wherein the magnetic field generator is arranged on the at least one component and provides an inhomogeneous magnetic field for the shielding of at least one component of the device from charge carriers of the plasma.