Vapor deposition processes for tantalum carbide nitride materials
Embodiments of the invention generally provide methods for depositing and compositions of tantalum carbide nitride materials. The methods include deposition processes that form predetermined compositions of the tantalum carbide nitride material by controlling the deposition temperature and the flow rate of a nitrogen-containing gas during a vapor deposition process, including thermal decomposition, CVD, pulsed-CVD, or ALD. In one embodiment, a method for forming a tantalum-containing material on a substrate is provided which includes heating the substrate to a temperature within a process chamber, and exposing the substrate to a nitrogen-containing gas and a process gas containing a tantalum precursor gas while depositing a tantalum carbide nitride material on the substrate. The method further provides that the tantalum carbide nitride material is crystalline and contains interstitial carbon and elemental carbon having an interstitial/elemental carbon atomic ratio of greater than 1, such as about 2, 3, 4, or greater.
1. A method for forming a tantalum-containing material on a substrate, comprising:
heating a substrate to a temperature within a process chamber; and
exposing the substrate to a nitrogen-containing gas and a process gas comprising a tantalum precursor gas while depositing a tantalum carbide nitride material on the substrate, wherein the tantalum carbide nitride material is crystalline, and comprises interstitial carbon and elemental carbon having an interstitial/elemental carbon atomic ratio of about 2 or greater; further comprising the tantalum carbide nitride material having the chemical formula of TaCxNy, wherein x is within a range from about 0.25 to about 0.40 and y is within a range from about 0.40 to about 0.50.
2. The method of claim 1 , wherein the interstitial/elemental carbon atomic ratio is about 3 or greater.
3. The method of claim 2 , wherein the interstitial/elemental carbon atomic ratio is about 4 or greater.
4. The method of claim 1 , wherein a flow rate of the nitrogen-containing gas is adjusted to obtain the interstitial/elemental carbon atomic ratio.
5. The method of claim 4 , wherein the flow rate of the nitrogen-containing gas is adjusted to about 1,500 sccm or less.
6. The method of claim 5 , wherein the flow rate of the nitrogen-containing gas is within a range from about 100 sccm to about 1,000 sccm.
7. The method of claim 6 , wherein the nitrogen-containing gas comprises ammonia.
8. The method of claim 1 , wherein the nitrogen-containing gas and the process gas comprising the tantalum precursor gas are exposed to the substrate at a gaseous flow rate ratio of at least about 1:1.
9. The method of claim 8 , wherein the gaseous flow rate ratio is at least about 3:1.
10. The method of claim 9 , wherein the gaseous flow rate ratio is at least about 5:1.
11. The method of claim 1 , wherein the temperature of the substrate is within a range from about 400° C. to about 500° C. and the tantalum precursor gas comprises tertbutylimido-tris(ethylmethylamido) tantalum.
12. The method of claim 1 , wherein the tantalum precursor gas comprises an alkylamido tantalum compound.
13. The method of claim 12 , wherein the alkylamido tantalum compound is selected from the group consisting of tertbutylimido-tris(ethylmethylamido) tantalum (TBTEMT), tertbutyl imido-tris(diethylamido) tantalum (TBTDEAT), tertbutylimido-tris(dimethylamido) tantalum (TBTDMAT), tertiaryamylimido-tris(dimethylamido) tantalum (TAIMATA), tertiaryamylimido-tris(diethylamido) tantalum, tertiaryamylimido-tris(methylethylamido) tantalum, pentakis(ethylmethylamido) tantalum (PEMAT), pentakis(diethylamido) tantalum (PDEAT), pentakis(dimethylamido) tantalum (PDMAT), plasmas thereof, derivatives thereof, and combinations thereof.
14. The method of claim 1 , wherein the process gas further comprises a gas selected from the group consisting of ammonia, nitrogen gas, hydrogen gas, plasmas thereof, derivatives thereof, and combinations thereof.
15. The method of claim 1 , wherein the process gas further comprises a hydrocarbon gas.
16. The method of claim 15 , wherein the hydrocarbon gas is selected from the group consisting of methane, ethane, propane, butane, ethene, acetylene, butene, butyne, plasmas thereof, derivatives thereof, and combinations thereof.
17. The method of claim 1 , wherein the tantalum carbide nitride material has a sheet resistance within a range from about 1×10 4 Ω/sq to about 1×10 6 Ω/sq.
18. A method for forming a tantalum-containing material on a substrate, comprising:
heating a substrate to a predetermined temperature within a process chamber; and
exposing the substrate to a nitrogen-containing gas and a tantalum precursor gas while depositing a tantalum carbide nitride material on the substrate, and the tantalum carbide nitride material has the chemical formula of TaCxNy, wherein x is within a range from about 0.25 to about 0.40 and y is within a range from about 0.40 to about 0.50.
19. The method of claim 18 , wherein the nitrogen-containing gas and the tantalum precursor gas is exposed to the substrate at a gaseous flow rate ratio of at least about 1:1.
20. The method of claim 19 , wherein the gaseous flow rate ratio is at least about 3:1.
21. A method for forming a tantalum-containing material on a substrate, comprising:
heating a substrate to a temperature within a range from about 400° C. to about 500° C.; and
exposing the substrate to a nitrogen-containing gas and a tantalum precursor gas comprising tertbutylimido-tris(ethylmethylamido) tantalum while depositing a tantalum carbide nitride material on the substrate, wherein the tantalum carbide nitride material is crystalline, comprises an interstitial/elemental carbon atomic ratio of about 2 or greater, and has the chemical formula of TaCxNy, wherein x is within a range from about 0.25 to about 0.40 and y is within a range from about 0.40 to about 0.5.
22. The method of claim 21 , wherein the nitrogen-containing gas and the tantalum precursor gas is exposed to the substrate at a gaseous flow rate ratio of at least about 1:1.
23. The method of claim 22 , wherein the gaseous flow rate ratio is at least about 3:1.