Sputtering target, thin film for optical information recording medium and process for producing the same
View Patent ↗Provided is a sputtering target having a relative density of 80% or more and containing a compound having as its principal component zinc oxide satisfying A X B Y O (KaX+KbY)/2 (ZnO) m , 1<m, X≦m, 0<Y≦0.9, X+Y=2, where A and B are respectively different positive elements of trivalence or more, and the valencies thereof are respectively Ka and Kb. Obtained is a ZnO based sputtering target which does not contain ZnS and SiO 2 , and, upon forming a film via sputtering, is capable of reducing the affect of heating the substrate, of performing high speed deposition, of adjusting the film thickness to be thin, of reducing the generation of particles (dust) and nodules during sputtering, of improving the productivity with small variation in quality, and which has fine crystal grains and a high density of 80% or more, particularly 90% or more.
1. A sputtering target having a relative density of 90% or more and containing a compound having as its principal component zinc oxide satisfying A x ByO (KaX +KbY)/2 (ZnO) m , where 2≦m, 0<Y≦0.9, X+Y=2, and where A and B are respectively different positive elements of trivalence or more and are selected from the group consisting of aluminum, gallium, indium, scandium, yttrium, lanthanum, vanadium, chromium, manganese, iron, niobium, tantalum, germanium, tin and antimony, and the valencies thereof are respectively Ka and Kb, wherein a range of variation of positive elements other than zinc in the target is within 0.5% and a range of variation of density in the target is within 3%.
2. A sputtering target for producing a protective film of a phase change optical information recording medium, comprising:
a sputtering target made of a compound having zinc oxide as its principal component and being a sintered body of calcinated powder of average grain size of 1 μm of less;
said sputtering target having a relative density of 90% or more, fine and uniform crystal grains, and an amorphous nature;
said compound satisfying A x ByO (KaX+KbY)/2 (ZnO) m , where 4≦m, 0<Y≦0.9, and X+Y=2, and where A and B are respectively different positive elements of trivalence or more, and the valencies thereof are respectively Ka and Kb; and
said sputtering target having a range of variation of positive elements other than zinc within 0.5% and a range of variation of density within 3%.
3. A sputtering target according to claim 2 , wherein A in said compound is indium.
4. A sputtering target according to claim 3 , wherein said amorphous nature of said sputtering target is retained during sputtering deposition of a thin film such that said thin film produced from said target has an amorphous nature.
5. A sputtering target according to claim 3 , wherein said amorphous nature and composition of said sputtering target is such that, when said sputtering target is sputtered, it forms a thin film having a maximum peak intensity ratio against an undeposited glass substrate in 2 θ=20 to 60° measured by XRD of 1.0 to 1.6.
6. A sputtering target according to claim 3 , wherein m in said compound equals 4.
7. A sputtering target according to claim 3 , wherein said compound is selected from the group consisting of In 1.5 Al 0.5 O 3 (ZnO) 4 , In 1.1 Ga 0.9 O 3 (ZnO) 4.2 , In 1.5 Fe 0.5 O 3 (ZnO) 4 , In 1.1 Ga 0.4 Al 0.5 O 3 (ZnO) 4 , and In 1.2 Y 0.3 Al 0.4 O 3 (ZnO) 4 .
8. A sputtering target according to claim 1 , wherein said compound is In 1.2 Fe 0.8 O 3 (ZnO) 2 .
9. A sputtering target according to claim 2 , wherein A and B are selected from the group consisting of aluminum, gallium, indium, scandium, yttrium, lanthanum, vanadium, chromium, manganese, iron, niobium, tantalum, germanium, tin and antimony.
10. A sputtering target according to claim 2 , wherein A and B are selected from the group consisting of indium, scandium, yttrium, lanthanum, vanadium, chromium, manganese, iron, niobium, tantalum, germanium, tin and antimony.
11. A sputtering target according to claim 3 , wherein B is selected from the group consisting of scandium, yttrium, lanthanum, vanadium, chromium, manganese, iron, niobium, tantalum, germanium, tin and antimony.
12. A sputtering target according to claim 2 , wherein A and B are selected from the group consisting of scandium, yttrium, lanthanum, vanadium, chromium, manganese, iron, niobium, tantalum, germanium, tin and antimony.
13. A sputtering target according to claim 2 , wherein said sputtering target is a direct current (DC) sputtering target.
14. A sputtering target according to claim 2 , wherein said sputtering target is a radio frequency (RF) sputtering target.
15. A sputtering target for producing a protective film of a phase change optical information recording medium, comprising:
a sputtering target made of a compound having zinc oxide as its principal component;
said sputtering target having a relative density of 90% or more, fine and uniform crystal grains, and an amorphous nature;
said compound satisfying A x ByO (KaX+KbY)/2 (ZnO) m , where 2≦m, 0<Y≦0.8, and X+Y=2, and where A and B are respectively different positive elements of trivalence or more, the valencies thereof are respectively Ka and Kb, and where A is indium (In);
said sputtering target having a range of variation of positive elements other than zinc within 0.5% and a range of variation of density within 3%.
16. A sputtering target according to claim 15 , wherein B is selected from the group consisting of scandium, yttrium, lanthanum, vanadium, chromium, manganese, iron, niobium, tantalum, germanium, tin and antimony.
17. A sputtering target according to claim 15 , wherein B is selected from the group consisting of aluminum and gallium.
18. A sputtering target according to claim 15 , wherein said sputtering target is a sintered body of calcinated powder of average grain size of 1 μm of less.
19. A sputtering target according to claim 1 , wherein said sputtering target is a sintered body of calcinated powder of average grain size of 1 μm of less.
20. A sputtering target according to claim 1 , wherein Y is less than or equal to 0.8.