Plasma-based debris mitigation for extreme ultraviolet (EUV) light source
A light source chamber in an Extreme Ultraviolet (EUV) lithography system may include a secondary plasma to ionize debris particles created by the light source and a foil trap to trap the ionize particles to avoid contamination of the collector optics in the chamber.
1. An apparatus comprising:
a plasma produced light source;
one or more collector optics;
a contaminant trap between the light source and the one or more collector optics;
a plasma generating device including an antenna having a coil the plasma generating device operative to prevent debris from reaching the one or more collector optics; and
a second coil between the contaminant trap and the collector optics.
2. The apparatus of claim 1 , wherein the light source comprises an extreme-ultraviolet (EUV) light source.
3. The apparatus of claim 1 , wherein the plasma generating device coil is an RF coil operative to produce an inductively coupled plasma.
4. The apparatus of claim 1 , further comprising means for minimizing sputtering of the plasma generating device coil.
5. The apparatus of claim 4 , further comprising a Faraday shield disposed about the coil in the plasma generating device to minimize sputtering of the coil in the plasma generating device.
6. The apparatus of claim 1 , further comprising:
an electromagnetic field generating device to attract the ionized debris particles toward the contaminant trap.
7. The apparatus of claim 6 , wherein the contaminant trap comprises a plurality of foil elements.
8. The apparatus of claim 1 , the further comprising a power supply connected to the plasma generating device coil.
9. The apparatus of claim 8 , wherein the power supply is operative to supply radio frequency (RF) power.
10. The apparatus of claim 8 , wherein the power source is operative to supply direct current (DC) power.
11. The apparatus of claim 1 , wherein the light source comprises electrodes.
12. The apparatus of claim 11 , wherein the electrodes comprise a first material and are coated by a second material.
13. The apparatus of claim 12 , wherein the second material is more easily ionized than the first material.
14. The apparatus of claim 12 , wherein the second material is more easily ablated than the first material.
15. The apparatus of claim 12 , wherein the first material comprises a tungsten alloy and the second material comprises an alkali metal.
16. The apparatus of claim 15 , wherein the alkali metal is cesium.
17. The apparatus of claim 15 , wherein the alkali metal is lithium.
18. The apparatus of claim 1 , wherein the second coil is operative to ionize debris particles that pass the contaminant trap.
19. A method comprising:
ionizing debris particles generated by a plasma producing light source in a lithography system;
diverting the ionized debris particles away from collector optics in the lithography system; wherein diverting comprises effecting the path of the ionized debris particles toward a contaminant trap between the light source and collector optics in the lithography system; and
moving remaining ionized debris particles between the contaminant trap and the collector optics away from the collector optics, with a plasma generating device.
20. The method of claim 19 , wherein said diverting comprises:
producing a potential difference between elements in the contaminant trap.
21. The method of claim 19 , wherein said ionizing comprises:
generating a secondary plasma between the light source and the collector optics.
22. The method of claim 21 , wherein said generating secondary plasma comprising generating a plasma by inductive coupling to minimize self-biasing.
23. The method of claim 22 , wherein Faraday shields are used to minimize self-biasing.
24. The method of claim 21 , wherein said generating the secondary plasma comprises:
providing radio frequency (RF) power to a coil between the light source and the contaminant trap.
25. The method of claim 19 , further comprising:
generating extreme ultraviolet (EUV) radiation with the light source.
26. A system comprising:
a light source chamber including
a plasma produced light source,
one or more collector optics,
a contaminant trap between the light source and the one or more collector optics, and
a first plasma generating device operative to effect removal of matter between the light source and the contaminant trap from reaching the one or more collector optics by diverting the matter toward the contaminant trap;
a second plasma generating device operative to effect removal of matter between the contaminant trap and the collector optics from reaching the one or more collector optics; and
a lithography chamber connected to the light source chamber.
27. The system of claim 26 , wherein the light source comprises an extreme-ultraviolet (EUV) light source.
28. The system of claim 27 , wherein the first plasma generating device comprises an antenna.
29. An apparatus comprising:
a light chamber including
a plasma produced light source in a light chamber;
one or more collector optics,
a contaminant trap between the light source and the one or more collector optics,
a first plasma generating device operative to ionize debris in the light chamber between the light source and the contaminant trap; and
a second plasma generating device operative to effect removal of matter between the contaminant trap and the collector optics from reaching the one or more collector optics.
30. The apparatus of claim 29 , wherein the light source comprises an extreme-ultraviolet (EUV) light source.
31. The apparatus of claim 29 , wherein the first plasma generating device comprises an antenna.
32. The apparatus of claim 31 , wherein the antenna comprises an RF coil to produce an inductively coupled plasma.