Method for forming conductive layer and substrate having the same, and method for manufacturing semiconductor device
View Patent ↗A separation layer is formed over a substrate having a depressed portion, using a silane coupling agent; a conductive layer and an insulating layer that covers the conductive layer are formed in the depressed portion over the separation layer; and a sticky member is attached to the insulating layer, then the conductive layer and the insulating layer are separated from the substrate. Alternatively, after these steps, a flexible substrate is attached to the conductive layer and the insulating layer.
1. A method for forming a conductive layer comprising the steps of:
forming a layer comprising a material having a structure that oxygen and an inactive group are bonded to silicon, over a substrate having a depressed portion;
forming a conductive layer in the depressed portion over the layer;
forming an insulating layer that covers the conductive layer;
attaching a sticky member to the insulating layer;
separating the conductive layer and the insulating layer from the substrate.
2. A method for forming a conductive layer according to claim 1 ,
wherein the material is formed using a silane coupling agent.
3. A method for forming a conductive layer according to claim 1 , further comprising the step of:
forming the depressed portion in the substrate.
4. The method for forming a conductive layer according to claim 1 , further comprising the steps of:
removing the layer from a surface of the conductive layer and the insulating layer after separating the conductive layer and the insulating layer from the substrate; and
attaching a flexible substrate to the conductive layer and the insulating layer.
5. The method for forming a conductive layer according to claim 1 , wherein the conductive layer serves as an antenna.
6. The method for forming a conductive layer according to claim 1 , wherein the conductive layer serves as a pixel electrode.
7. The method for forming a conductive layer according to claim 1 , wherein the conductive layer serves as a wiring.
8. A method for manufacturing a substrate having a conductive layer comprising the steps of:
forming a layer comprising a material having a structure that oxygen and an inactive group are bonded to silicon, over a substrate having a depressed portion;
forming a conductive layer in the depressed portion over the layer;
forming an insulating layer that covers the conductive layer;
attaching a sticky member to the insulating layer;
separating the conductive layer and the insulating layer from the substrate; and
bonding a flexible substrate having an opening to the conductive layer and the insulating layer.
9. A method for forming a conductive layer according to claim 8 ,
wherein the material is formed using a silane coupling agent.
10. A method for forming a conductive layer according to claim 8 , further comprising the step of:
forming the depressed portion in the substrate.
11. The method for manufacturing a substrate having a conductive layer according to claim 8 , wherein the conductive layer serves as an antenna.
12. The method for manufacturing a substrate having a conductive layer according to claim 8 , wherein the conductive layer serves as a pixel electrode.
13. The method for manufacturing a substrate having a conductive layer according to claim 8 , wherein the conductive layer serves as a wiring.
14. A method for manufacturing a semiconductor device comprising the steps of:
forming a layer comprising a material having a structure that oxygen and an inactive group are bonded to silicon, over a substrate having a depressed portion;
forming a conductive layer in the depressed portion over the layer;
forming an insulating layer that covers the conductive layer;
attaching a sticky member to the insulating layer;
separating the conductive layer and the insulating layer from the substrate; and
electrically connecting the conductive layer and a connection terminal of an integrated circuit and bonding the insulating layer and the integrated circuit.
15. A method for forming a conductive layer according to claim 14 ,
wherein the material is formed using a silane coupling agent.
16. A method for forming a conductive layer according to claim 14 , further comprising the step of:
forming the depressed portion in the substrate.
17. The method for manufacturing a semiconductor device according to claim 14 , wherein the conductive layer serves as an antenna.
18. The method for manufacturing a semiconductor device according to claim 14 , wherein the conductive layer serves as a pixel electrode.
19. The method for manufacturing a semiconductor device according to claim 14 , wherein the conductive layer serves as a wiring.
20. A method for manufacturing a semiconductor device comprising the steps of:
forming a layer comprising a material having a structure that oxygen and an inactive group are bonded to silicon, over a substrate having a depressed portion;
forming a conductive layer in the depressed portion over the layer;
forming an insulating layer that covers the conductive layer;
attaching a sticky member to the insulating layer;
separating the conductive layer and the insulating layer from the substrate;
bonding a flexible substrate having an opening to the conductive layer and the insulating layer; and
electrically connecting the conductive layer and a connection terminal of an integrated circuit in the opening of the flexible substrate and bonding the flexible substrate and the integrated circuit.
21. A method for forming a conductive layer according to claim 20 ,
wherein the material is formed using a silane coupling agent.
22. A method for forming a conductive layer according to claim 20 , further comprising the step of:
forming the depressed portion in the substrate.
23. The method for manufacturing a semiconductor device according to claim 20 , wherein the conductive layer serves as an antenna.
24. The method for manufacturing a semiconductor device according to claim 20 , wherein the conductive layer serves as a pixel electrode.
25. The method for manufacturing a semiconductor device according to claim 20 , wherein the conductive layer serves as a wiring.