Fabricating a structure usable in an imprint lithographic process

1. A method of fabricating a structure usable in an imprint lithographic process comprising:

patterning masking material layers on a substrate thereby forming a multi-layer mask; and

sequentially removing portions of the substrate based on the multi-layer mask thereby forming a structure usable in an imprint lithographic process wherein the structure comprises a number of levels and wherein the number of levels exceeds a number of masking material layers in the multi-layer mask, wherein the number of masking material layers is n and the maximum number of levels that can be formed is 2 n , where n is greater than or equal to 3.

2. The method of claim 1 wherein the multi-layer mask comprises a plurality of mutually etch selective masking materials.

3. The method of claim 1 wherein the multi-layer mask and the substrate are mutually etch selective.

4. The method of claim 3 wherein sequentially removing portions of the substrate based on the multi-layer mask further comprises:

selectively etching the substrate and the multi-layer mask.

5. The method of claim 1 wherein the multi-mask layer comprises any one of the photoresist, chromium and silicon dioxide.

6. The method of claim 5 wherein the substrate comprises a Silicon substrate.

7. The method of claim 1 wherein the substrate comprises a plurality of layers of material and wherein the sequentially removing portions of the substrate comprises removing portions of only the top layer.

8. The method of claim 1 wherein the substrate comprises a plurality of layers including a top layer and at least one layer beneath the top layer and wherein the sequentially removing portions of the substrate comprises removing portions of the top layer and at least one of the layers beneath the top layer.

9. A method of fabricating a structure usable in an imprint lithographic process comprising:

selectively patterning a number of masking material layers on a substrate thereby forming a multi-layer mask; and

selectively etching the substrate and the multi-layer mask whereby a resulting structure includes a number of levels and the number of levels is greater than the number of masking material layers, wherein the number of masking material layers is n and the maximum number of levels that can formed is 2 n where n is greater than or equal to 3.

10. The method of claim 9 wherein the number of masking material layers comprises a plurality of mutually etch selective masking materials.

11. The method of claim 9 wherein the multi-mask layer comprises any of the photoresist, chromium and silicon dioxide.

12. The method of claim 11 wherein the substrate comprises a Silicon substrate.