CMOS image sensor and method for manufacturing the same
A CMOS image sensor and a method for manufacturing the same improves photosensitivity and prevent loss of light by forming a photo-sensing unit under a color filter. The CMOS image sensor may include a plurality of transistors formed on a semiconductor substrate, a metal line formed over the plurality of transistors for electrically connecting the plurality of transistors, and a plurality of photodiodes electrically connected with the plurality of transistors and formed over the metal line.
1. A CMOS image sensor comprising:
a plurality of transistors formed on a semiconductor substrate;
a metal line formed over the plurality of transistors for electrically connecting the plurality of transistors;
a plurality of photodiodes electrically connected with the transistors and formed over the metal line;
a color filter formed on the plurality of photodiodes;
a planarization layer formed on the color filter; and
a micro-lens formed on the planarization layer.
2. The CMOS image sensor of claim 1 , further comprising a metal dielectric layer formed between the plurality of transistors and the plurality of photodiodes.
3. The CMOS image sensor of claim 2 , wherein the metal dielectric layer comprises a TEOS oxide layer and an SOG oxide layer.
4. The CMOS image sensor of claim 2 , wherein the metal dielectric layer comprises:
a first metal dielectric layer formed between the plurality of transistors and the metal line; and
a second metal dielectric layer formed between the metal line and the plurality of photodiodes.
5. The CMOS image sensor of claim 2 , further comprising a plug formed in the metal dielectric layer for electrically connecting one of the plurality of transistors with one of the plurality of photodiodes.
6. The CMOS image sensor of claim 1 , wherein the metal line is formed of two or more metal line layers.
7. The CMOS image sensor of claim 1 , further comprising an isolation region formed between each of the plurality of photodiodes.