Method of high density plasma gap-filling with minimization of gas phase nucleation
A method of high density plasma (HDP) gap-filling with a minimization of gas phase nucleation (GPN) is provided. The method includes providing a substrate having a trench in a reaction chamber. Next, a first deposition step is performed to partially fill a dielectric material in the trench. Then, an etch step is performed to partially remove the dielectric material in the trench. Thereafter, a second deposition step is performed to partially fill the dielectric material in the trench. A reaction gas used in the second deposition step includes a carrier gas, an oxygen-containing gas, a silicon-containing gas, and a hydrogen-containing gas. After the carrier gas and oxygen-containing gas are introduced into the reaction chamber and a radio frequency (RF) power is turned on for a period of time, the silicon-containing gas and hydrogen-containing gas are introduced into the reaction chamber.
1. A method of high density plasma (HDP) gap-filling with a minimization of gas phase nucleation (GPN), comprising:
(a) providing a substrate having a trench in a reaction chamber;
(b) performing a first deposition step to partially fill a dielectric material in the trench;
(c) performing an etch step to partially remove the dielectric material in the trench; and
(d) performing a second deposition step to partially fill the dielectric material in the trench, wherein a reaction gas used in the second deposition step comprises a carrier gas, an oxygen-containing gas, a silicon-containing gas and a hydrogen-containing gas, and after the carrier gas and the oxygen-containing gas are introduced into the reaction chamber and a radio frequency (RF) power is turned on for a period of time, the silicon-containing gas and the hydrogen-containing gas are introduced into the reaction chamber,
wherein in the second deposition step, after the carrier gas and the oxygen-containing gas are introduced into the reaction chamber and the RF power is turned on for a period of time, the silicon-containing gas is first introduced and then the hydrogen-containing gas is introduced into the reaction chamber, and a time interval after the silicon-containing gas is introduced into the reaction chamber and before the hydrogen-containing gas is introduced into the reaction chamber is greater than or equal to 1 second.
2. The method of HDP gap-filling with a minimization of GPN as claimed in claim 1 , further comprising repeating step (c) and step (d) until the dielectric material fills up the trench.
3. The method of HDP gap-filling with a minimization of GPN as claimed in claim 1 , wherein the reaction gas used in the first deposition step comprises the carrier gas, the oxygen-containing gas, the silicon-containing gas and the hydrogen-containing gas, and after the carrier gas and the oxygen-containing gas are introduced into the reaction chamber and the RF power is turned on for a period of time, the silicon-containing gas and the hydrogen-containing gas are introduced into the reaction chamber.
4. The method of HDP gap-filling with a minimization of GPN as claimed in claim 1 , wherein the carrier gas comprises an inert gas.
5. The method of HDP gap-filling with a minimization of GPN as claimed in claim 1 , wherein in the second deposition step, a time interval after the silicon-containing gas is introduced into the reaction chamber and before the hydrogen-containing gas is introduced into the reaction chamber is 1-4 seconds.
6. The method of HDP gap-filling with a minimization of GPN as claimed in claim 1 , wherein in the second deposition step, the hydrogen-containing gas is introduced into the reaction chamber in a manner of gradually increasing a flow rate.
7. The method of HDP gap-filling with a minimization of GPN as claimed in claim 1 , wherein the silicon-containing gas comprises a silane gas.
8. The method of HDP gap-filling with a minimization of GPN as claimed in claim 1 , wherein the reaction gas used in the etch step comprises a fluorine-containing compound and hydrogen-containing gas.
9. The method of HDP gap-filling with a minimization of GPN as claimed in claim 8 , wherein the fluorine-containing compound comprises nitrogen fluoride, halothane compound or sulfur fluoride.
10. A method of HDP gap-filling with a minimization of GPN, comprising:
(a) providing a substrate having a trench;
(b) performing a first deposition step to partially fill a dielectric material in the trench;
(c) performing an etch step to partially remove the dielectric material in the trench; and
(d) performing a second deposition step to partially fill the dielectric material in the trench, wherein a reaction gas used in the second deposition step comprise a carrier gas, an oxygen-containing gas, a silicon-containing gas and a hydrogen-containing gas, and after the carrier gas, the oxygen-containing gas and the silicon-containing gas are introduced into the reaction chamber and an RF power is turned on for a period of time, the hydrogen-containing gas is introduced into the reaction chamber,
wherein in the second deposition step, a time interval after the silicon-containing gas is introduced into the reaction chamber and before the hydrogen-containing gas is introduced into the reaction chamber is greater than or equal to 1 second.
11. The method of HDP gap-filling with a minimization of GPN as claimed in claim 10 , further comprising repeating the step (c) and the step (d) until the dielectric material fills up the trench.
12. The method of HDP gap-filling with a minimization of GPN as claimed in claim 10 , wherein the reaction gas used in the first deposition step comprises the carrier gas, the oxygen-containing gas, the silicon-containing gas and the hydrogen-containing gas, and after the carrier gas, the oxygen-containing gas and the silicon-containing gas are introduced into the reaction chamber and the RF power is turned on for a period of time, the hydrogen-containing gas is introduced into the reaction chamber.
13. The method of HDP gap-filling with a minimization of GPN as claimed in claim 10 , wherein the carrier gas comprises an inert gas.
14. The method of HDP gap-filling with a minimization of GPN as claimed in claim 10 , wherein the silicon-containing gas comprises a silane gas.
15. The method of HDP gap-filling with a minimization of GPN as claimed in claim 10 , wherein the reaction gas used in the etch step comprises a fluorine-containing compound and hydrogen-containing gas.
16. The method of HDP gap-filling with a minimization of GPN as claimed in claim 15 , wherein the fluorine-containing compound comprises nitrogen fluoride, halothane compound or sulfur fluoride.
17. The method of HDP gap-filling with a minimization of GPN as claimed in claim 10 , wherein in the second deposition step, a time interval after the silicon-containing gas is introduced into the reaction chamber and before the hydrogen-containing gas is introduced into the reaction chamber is 1-4 seconds.
18. The method of HDP gap-filling with a minimization of GPN as claimed in claim 10 , wherein in the second deposition step, the hydrogen-containing gas is introduced into the reaction chamber in a manner of gradually increasing a flow rate.