IP Library Granted Patent US 7,764,137
Granted Patent B2
US 7,764,137 · App. 11/903,296 · Granted Jul 27, 2010

Circuit and method for generating electrical solutions with junction field effect transistors

Assignee: SuVolta, Inc.
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Quick Facts
Patent No.
US 7,764,137
App. No.
11/903,296
Granted
Jul 27, 2010
Kind
B2
Abstract

A circuit can include an amplifier having at least a first junction field effect transistor (JFET) of a first conductivity type with a source coupled to a first power supply node, and a drain coupled to an amplifier output node. A first variable bias circuit can be coupled between the drain and at least one gate of the first JFET. The first variable bias circuit can alter a direct current (DC) bias to the first JFET according a potential at the amplifier output node. A first bias impedance can be coupled between the drain of the first JFET and a second power supply node. The circuit can also include a non-linear transmission line (NLTL) coupled between the amplifier output and a gate of the first JFET. The NLTL being configured to propagate an electrical soliton.

Claims (29)

1. A circuit for generating electrical solitons, comprising:

a first amplifier having a gain variable according to at least a magnitude of a voltage at an output of the first amplifier, the first amplifier comprising at least one oscillator junction field effect transistor (JFET) that includes a gate of a semiconductor material doped to a first conductivity type formed on a channel of semiconductor material doped to a second conductivity type, the gate of the at least one oscillator JFET being coupled to an input of the first amplifier by a coupling capacitance;

a feedback non-linear transmission line (NLTL) coupled between the output and the input of the first amplifier; and

a pulse generator having a gain variable according to at least a magnitude of the voltage at the output of the first amplifier.

2. The circuit claim 1 , wherein:

the at least one oscillator JFET includes

a first oscillator JFET of a first channel conductivity type having a source coupled to a first power supply node, and a drain coupled to an intermediate node, and

a second oscillator JFET of a second channel conductivity type having a gate coupled to the intermediate node, a source coupled to a second power supply node, and a drain coupled to the output of the first amplifier.

3. The circuit of claim 1 , wherein:

the feedback NLTL comprises variable capacitors periodically coupled between two conductive lines, the variable capacitors providing a capacitance that varies according to the potential between the two conductive lines.

4. The circuit of claim 1 , wherein:

the pulse generator comprises at least one transmission JFET that includes a gate of a semiconductor material doped to the first conductivity type formed on a substrate of semiconductor material doped to the second conductivity type, the gate of the at least one transmission JFET being coupled to the input of the first amplifier; and

a transmission NLTL coupled to an output of the pulse generator, the transmission NLTL having a same repeating structure as the feedback NLTL.

5. The circuit of claim 4 , wherein:

the first amplifier includes a variable bias stage coupled between the drain and at least one gate of the at least one oscillator JFET, the variable bias stage generating a bias voltage that varies according to the potential at the intermediate node; and

the at least one transmission JFET has a gate coupled to the drain of the at least one oscillator JFET.

6. The circuit of claim 4 , further including:

the pulse generator is disabled and enabled according to an enable input; and

a main integrated circuit section including at least one data output coupled to the enable input of the pulse generator.

7. The circuit of claim 6 , wherein:

the main integrated circuit portion is selected from the group consisting of: a random access memory (RAM), a programmable read only memory (PROM), a logic circuit, and a programmable logic circuit.

8. The circuit of claim 4 , wherein:

the transmission NLTL is formed on a same substrate containing the first amplifier and pulse generator.

9. The circuit of claim 4 , wherein:

the transmission NLTL couples a first substrate containing the first amplifier and pulse generator to a second substrate different from the first substrate.

10. The circuit of claim 1 , further including:

the first amplifier and NLTL form portions of a first oscillator circuit that outputs a first signal having about a first frequency;

a second oscillator that outputs a second signal having about a second frequency, the second amplifier varying from the second frequency according to noise; and

a logic circuit for logically combining the first signal and the second signal to generate a pseudorandom sequence of pulses.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 27, 2015
From: SU VOLTA, INC.
To: MIE FUJITSU SEMICONDUCTOR LIMITED
Reel/Frame 035508/0113 →
CHANGE OF NAME Recorded Apr 16, 2010
From: DSM SOLUTIONS, INC.
To: SUVOLTA, INC.
Reel/Frame 024245/0123 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 21, 2007
From: HAMLIN, CHRISTOPHER
To: DSM SOLUTIONS, INC.
Reel/Frame 019922/0692 →
Continuity (2)
Provisional Application 6084825300 · Sep 28, 2006
Related Publication 20080079493A1 · Apr 3, 2008