Semiconductor device, method of manufacturing the same, and method of manufacturing metal compound thin film

1. A method of manufacturing a metal compound thin film comprising:

forming a first metal compound layer on a substrate by atomic layer deposition;

performing first annealing on the first metal compound layer in an atmosphere containing a nitrogen compound gas, thereby diffusing nitrogen into the first metal compound layer; and

forming a second metal compound layer on the first metal compound layer by atomic layer deposition;

performing second annealing on the second metal compound layer in an atmosphere of which composition is different from that of the first annealing;

forming a third metal compound layer on the second metal compound layer by atomic layer deposition; and

performing a third annealing on the third metal compound layer in an atmosphere containing a nitrogen compound gas, thereby diffusing nitrogen into the third metal compound layer;

wherein the second metal compound layer has nitrogen concentrations lower than that of the first and third metal compound layers.

2. The method of manufacturing a metal compound thin film according to claim 1 , wherein

the first metal compound layer and the second metal compound layer each contain an element selected from the group consisting of Hf, Zr, La, Al, Si, and Y.

3. A method of manufacturing a semiconductor device comprising:

forming a gate insulating film and a conductive film on a semiconductor substrate in this order, the gate insulating film being made of a metal compound thin film; and

selectively removing the gate insulating film and the conductive film to form a gate electrode, wherein

the gate insulating film made of the metal compound thin film is formed by the method of manufacturing a metal compound thin film according to claim 1 .

4. A method of manufacturing a metal compound thin film comprising:

forming a first metal compound layer comprising a metal atomic layer and an oxygen atomic layer on a substrate by atomic layer deposition;

performing first annealing on the first metal compound layer in an atmosphere containing a nitrogen compound gas, thereby diffusing nitrogen into the first metal compound layer; and

forming a second metal compound layer consisting of a metal atomic layer and an oxygen atomic layer on the first metal compound layer by atomic layer deposition;

performing second annealing on the second metal compound layer in an atmosphere of which composition is different from that of the first annealing;

forming a third metal compound layer consisting of a metal atomic layer and an oxygen atomic layer on the second metal compound layer by atomic layer deposition; and

performing third annealing on the third metal compound layer in an atmosphere containing a nitrogen compound gas, thereby diffusing nitrogen into the third metal compound layer; wherein

the second metal compound layer having nitrogen concentrations lower than that of the first and third metal compound layers; wherein

the forming the first metal compound layer comprises depositing the metal atomic layer and the oxygen atomic layer one by one, and the performing first annealing removes impurities contained in the metal atomic layer and the oxygen atomic layer.

5. A method of manufacturing a semiconductor device comprising:

forming a gate insulating film and a conductive film on a semiconductor substrate in this order, the gate insulating film being made of a metal compound thin film; and

selectively removing the gate insulating film and the conductive film to form a gate electrode, wherein

the gate insulating film made of the metal compound thin film is formed by the method of manufacturing a metal compound thin film according to claim 4 .