Manufacturing method of semiconductor device and film deposition system
A dielectric film ( 91 ) made of CF is deposited on a substrate. A protective layer comprising an SiCN film ( 93 ) is formed on the dielectric film ( 91 ). A film ( 94 ) serving as a hardmask made of SiCO is deposited on the protective layer by a plasma containing active species of silicon, carbon, and oxygen. When the protective layer is formed, an SiC film ( 92 ) is deposited on the dielectric film ( 91 ) by a plasma containing active species of silicon and carbon, and thereafter the SiCN film ( 93 ) is deposited on the SiC film ( 92 ) by a plasma containing active species of silicon, carbon, and nitrogen.
1. A manufacturing method of a semiconductor device, comprising the steps of:
depositing on a substrate, on a surface of which a wiring is formed, a dielectric film made of fluorine-added carbon;
forming on the dielectric film an adhesion layer including silicon and carbon;
forming on the adhesion layer a protective layer comprising a nitrogen-added silicon carbide film;
depositing on the protective layer a film made of oxygen-added silicon carbide by a plasma containing active species of silicon, carbon, and oxygen; and
obtaining a hardmask having a predetermined pattern by etching the film.
2. The manufacturing method according to claim 1 , wherein
the plasma containing active species of silicon, carbon, and oxygen is obtained by activating a gas of an organic silicon compound and an oxygen gas.
3. The manufacturing method according to claim 2 , wherein
the step of forming the protective layer includes the step of
depositing on the adhesion layer the nitrogen-added silicon carbide film by a plasma containing active species of an organic silicon compound and an active species of nitrogen.
4. The manufacturing method according to claim 1 , wherein
the step of forming the adhesion layer includes the step of
depositing on the dielectric film a silicon carbide film by a plasma containing active species of silicon and carbon.
5. The manufacturing method according to claim 1 , wherein
the step of forming the adhesion layer includes the step of
depositing on the dielectric film a silicon carbide film by a plasma obtained by activating a gas of an organic silicon compound.
6. The manufacturing method according to claim 1 , wherein
the step of forming the protective layer includes the step of
depositing on the adhesion layer the nitrogen-added silicon carbide film by a plasma containing active species of silicon, carbon, and nitrogen.
7. The manufacturing method according to claim 1 , further comprising of the step of
etching the dielectric film by a plasma through the hardmask.
8. The manufacturing method according to claim 1 , wherein
the step of depositing the film serving as a hardmask includes the sub-steps of:
depositing a first film made of a silicon carbide by a plasma containing active species of silicon and carbon, and
depositing a second film made of an oxygen-added silicon carbide by a plasma containing active species of silicon, carbon, and oxygen.