Semiconductor circuit and method of fabricating the same
View Patent ↗A bonded semiconductor structure includes a support substrate which carries a first electronic circuit, and an interconnect region carried by the support substrate. The interconnect region includes a capacitor and conductive line in communication with the first electronic circuit. The circuit includes a bonding layer carried by the interconnect region, and a bonded substrate coupled to the interconnect region through the bonding layer.
1. A bonded semiconductor structure, comprising:
a support substrate which carries a first electronic circuit;
an interconnect region carried by the support substrate, the interconnect region including a capacitor and conductive line in communication with the first electronic circuit;
a bonding layer carried by the interconnect region; and
a bonded substrate coupled to the interconnect region through the bonding layer.
2. The structure of claim 1 , further including a bonding interface, wherein the bonded substrate and interconnect region are coupled together through the bonding interface.
3. The structure of claim 2 , wherein the bonding interface is between the capacitor and bonded substrate.
4. The structure of claim 1 , wherein the bonding layer is between the capacitor and bonded substrate.
5. The structure of claim 1 , further including a dielectric material region positioned between the conductive line and bonding layer.
6. The structure of claim 1 , further including a dielectric material region positioned between the conductive line and a sidewall of the bonded substrate.
7. The structure of claim 1 , wherein the bonded substrate includes a semiconductor material region positioned between the second electronic circuit and bonding layer.
8. The structure of claim 1 , wherein the bonded substrate includes a semiconductor material region positioned between the second electronic circuit and bonding interface.
9. The structure of claim 1 , further including a second electronic circuit carried by the bonded substrate.
10. The structure of claim 9 , wherein the first and second electronic circuits are in communication with each other through the conductive line.
11. The structure of claim 9 , further including a second interconnect region carried by the bonded substrate, the second interconnect region being in communication with the second electronic circuit and the conductive line.
12. The structure of claim 9 , wherein the bonding layer and second electronic circuit are positioned proximate to a bonding surface and detach layer surface of the bonded substrate, respectively.
13. A bonded semiconductor structure, comprising:
an interconnect region which includes a capacitor and conductive line;
a bonding layer carried by the interconnect region; and
a bonded substrate coupled to the interconnect region through the bonding layer;
wherein the interconnect region includes a first dielectric material region between the bonding layer and capacitor.
14. The structure of claim 13 , wherein the bonded substrate includes a detach layer surface positioned away from the bonding layer.
15. The structure of claim 13 , further including a second dielectric material region between the bonding layer and conductive line.
16. The structure of claim 13 , further including a second dielectric material region between a sidewall of the bonded substrate and the conductive line.
17. The structure of claim 13 , further including a support substrate which carries a first electronic circuit, the first electronic circuit being in communication with the capacitor and conductive line.
18. The structure of claim 17 , further including a second electronic circuit carried by the bonded substrate, the second electronic circuit being in communication with the first electronic circuit through the conductive line.
19. A method of forming a bonded semiconductor structure, comprising:
providing a support substrate which carries a first electronic circuit;
providing an interconnect region carried by the support substrate, the interconnect region including a capacitor and conductive line in communication with the first electronic circuit;
providing a bonding layer carried by the interconnect region; and
coupling a bonded substrate to the interconnect region through the bonding layer.
20. The method of claim 19 , wherein the step of coupling includes forming a bonding interface.
21. The method of claim 19 , wherein the step of coupling includes forming a metal-semiconductor bonding interface.
22. The method of claim 19 , further including decoupling the bonded substrate from a carrier substrate.
23. The method of claim 19 , further including forming a second electronic circuit proximate to a detach layer surface of the bonded substrate.
24. The method of claim 23 , further including providing a second interconnect region which provides communication between the second electronic circuit and conductive line.