System and method for semiconductor processing
Systems and methods are disclosed to perform semiconductor processing with a process chamber; a flash lamp adapted to be repetitively triggered; and a controller coupled to the control input of the flash lamp to trigger the flash lamp. The system can deploy a solid state plasma source in parallel with the flash lamp in wafer processing.
1. A method to deposit a film in a processing chamber, comprising:
(a) introducing a plurality of precursors to deposit a thin layer,
wherein the deposition is not self-limiting by saturation, and
wherein the deposition process comprises a reaction between the introduced plurality of precursors or a decomposition of the introduced precursors on the substrate surface to produce the thin film; and
(b) either
triggering a flash lamp to generate thermal energy to modify the deposited layer; or
triggering a plasma source to generate a plasma energy to modify the deposited layer; or
triggering a flash lamp to generate thermal energy and triggering a plasma source to generate a plasma energy to modify the deposited layer,
wherein the modification of the deposited layer extends beyond the surface of the deposited layer.
2. The method of claim 1 , further comprising a step (a1), after step (a), of:
(a1) purging the plurality of precursors.
3. The method of claim 1 , wherein the step (b) further comprising the introduction of another precursor.
4. The method of claim 3 , further comprising a step (b1) after step (b), of:
(b1) purging the another precursor.
5. The method of claim 1 , further comprising a plurality of the steps (a) and (b) until a desired film thickness is reached.
6. The method of claim 2 , further comprising a plurality of the steps (a) and (b) until a desired film thickness is reached.
7. The method of claim 4 , further comprising a plurality of the steps (a)-(b1) until a desired film thickness is reached.
8. The method of claim 1 wherein the step (a) comprises using plasma energy in the deposition process.
9. The method of claim 1 , wherein the precursors in step (a) comprises CVD precursors.
10. The method of claim 3 , wherein the another precursor in step (b) comprises process gases, selected from a group consisting of nitrogen, oxygen, hydrogen, ammonia, NF 3 , silane, ozone, argon.
11. The method of claim 3 , wherein the another precursor in step (b) comprises a CVD precursor.
12. A method to deposit a film in a processing chamber, comprising:
(a) introducing a plurality of precursors to deposit a thin layer,
wherein the deposition is not self-limiting by saturation, and
wherein the deposition process comprises a reaction between the introduced plurality of precursors or a decomposition of the introduced precursors on the substrate surface to produce the thin film; and
(b) triggering a flash lamp to generate thermal energy to modify the deposited layer,
wherein the modification of the deposited layer extends beyond the surface of the deposited layer.
13. The method of claim 12 , further comprising a step (a1) after step (a), of:
(a1) introducing and purging the precursors.
14. The method of claim 13 , wherein the step (b) further comprising the introduction of another precursor, and further comprising a step (b1), after step (b), of:
(b1) purging the another precursor.
15. The method of claim 12 , further comprising a plurality of the steps (a) and (b) until a desired film thickness is reached.
16. A method to deposit a film in a processing chamber, comprising:
(a) introducing a plurality of precursors to deposit a thin layer,
wherein the deposition is not self-limiting by saturation, and
wherein the deposition process comprises a reaction between the introduced plurality of precursors or a decomposition of the introduced precursors on the substrate surface to produce the thin film; and
(b) triggering a plasma source to generate plasma energy to modify the deposited layer,
wherein the modification of the deposited layer extends beyond the surface of the deposited layer.
17. The method of claim 16 , further comprising a step (a1), after step (a), of:
(a1) introducing and purging the precursors.
18. The method of claim 17 , wherein the step (b) further comprising the introduction of another precursor, and further comprising a step (b1), after step (b), of:
(b1) purging the another precursor.
19. The method of claim 16 , further comprising a plurality of the steps (a) and (b) until a desired film thickness is reached.
20. The method of claim 16 , wherein the step (a) comprises using plasma energy in the deposition process.