IP Library Granted Patent US 7,875,349
Granted Patent B2
US 7,875,349 · App. 12/382,899 · Granted Jan 25, 2011

Polymer inactivation method for polycrystalline silicon manufacturing device

Assignee: Mitsubishi Materials Corporation
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Quick Facts
Patent No.
US 7,875,349
App. No.
12/382,899
Granted
Jan 25, 2011
Kind
B2
Abstract

A polymer inactivation method for a polycrystalline silicon manufacturing device, wherein humidified gas such as water vapor and humidified nitrogen gas is supplied into a reacting furnace for manufacturing polycrystalline silicon to hydrolyze polymers adhered to an inner surface of the reacting furnace. It is preferable that a furnace wall of the reacting furnace is heated when the humidified gas is supplied.

Claims (12)

1. A polymer inactivation method for a polycrystalline silicon manufacturing device, comprising:

supplying humidified gas into a reacting furnace for manufacturing polycrystalline silicon to hydrolyze polymers adhered to an inner surface of the reacting furnace.

2. The polymer inactivation method for a polycrystalline silicon manufacturing device according to claim 1 ,

wherein a furnace wall of the reacting furnace is heated to a temperature above the dew point of water vapor in the reacting furnace when the humidified gas is supplied.

3. The polymer inactivation method for a polycrystalline silicon manufacturing device according to claim 1 ,

wherein humidified gas is also supplied into an exhaust gas pipe connected to the reacting furnace to hydrolyze polymers adhered to an inner surface of the exhaust gas pipe.

4. The polymer inactivation method for a polycrystalline silicon manufacturing device according to claim 3 ,

wherein the humidified gas is supplied in a state in which a pipe wall of the exhaust gas pipe is heated.

5. The polymer inactivation method for a polycrystalline silicon manufacturing device according to claims 1 ,

wherein humidity of the humidified gas is greater than or equal to 30%.

6. The polymer inactivation method for a polycrystalline silicon manufacturing device according to claims 1 ,

wherein a supply amount of the humidified gas per hour is greater than or equal to 30 times and less than or equal to 60 times with respect to the inner volume of the reacting furnace and the humidified gas is supplied for at least 6 hours.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 5, 2023
From: MITSUBISHI MATERIALS CORPORATION
To: HIGH-PURITY SILICON CORPORATION
Reel/Frame 063858/0867 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 26, 2009
From: ENDOH, TOSHIHIDE; TEBAKARI, MASAYUKI; ISHII, TOSHIYUKI; SAKAGUCHI, MASAAKI
To: MITSUBISHI MATERIALS CORPORATION
Reel/Frame 022511/0473 →
Priority Claims (1)
JP 2008-085671 · Mar 28, 2008 · national
Continuity (1)
Related Publication 20090246113A1 · Oct 1, 2009