Method and system for non-destructive distribution profiling of an element in a film
View Patent ↗A method to determine a distribution profile of an element in a film. The method comprises exciting an electron energy of an element deposited in a first film, obtaining a first spectrum associating with the electron energy, and removing a background spectrum from the first spectrum. Removing the background value generates a processed spectrum. The method further includes matching the processed spectrum to a simulated spectrum with a known simulated distribution profile for the element in a film comparable to the first film. A distribution profile is obtained for the element in the first film based on the matching of the processed spectrum to a simulated spectrum selected from the set of simulated spectra.
1. A method comprising:
exciting at least two electron energies of an element deposited in a sample film;
obtaining an intensity ratio value for said electron energies, said intensity ratio value comprising a first intensity value and a second intensity value associated with said electron energies, said first intensity value and said second intensity value representing a first electron energy value and a second electron energy value for said element;
correlating said intensity ratio value to a correlation function associating with a set of intensity ratio values as a function of centroid of the element in a reference film, said reference film being comparable to said sample film; and
determining a centroid of said element in said sample film based on said correlating.
2. The method of claim 1 , wherein further comprising:
obtaining said set of intensity ratio values for said element by exciting said two electron energies from said element deposited in each of said reference film with a known centroid value; and
generating said intensity ratio values for said element as a function of centroids.
3. The method of claim 2 , further comprising:
determining a centroid value for said element in said sample film.
4. The method of claim 3 , further comprising at least one of:
determining a dose level for said element in said sample film;
correcting a dose level for said element in said sample film;
predicting an electrical parameter for a device to be formed in or on said sample film; and
controlling an electrical parameter for a device to be formed in or on said sample film using said centroid value for said element in said sample film.