Semiconductor chip having island dispersion structure and method for manufacturing the same
View Patent ↗The present invention has an object to provide a semiconductor chip of high reliability with less risk of breakage. Specifically, the present invention provides a semiconductor chip having a semiconductor silicon substrate including a semiconductor device layer and a porous silicon domain layer, the semiconductor device layer being provided in a main surface region on one surface of the semiconductor silicon substrate, the porous silicon domain layer being provided in a main surface region on a back surface which is the other surface of the semiconductor silicon substrate, and the porous silicon domain layer having porous silicon domains dispersed like islands in the back surface of the semiconductor silicon substrate.
1. A semiconductor chip including a semiconductor silicon substrate having a semiconductor device layer and a dimple layer,
said semiconductor device layer being provided in a main surface region on one surface of the semiconductor silicon substrate and including at least one transistor,
said dimple layer being provided in a main surface region on a back surface which is another surface of the semiconductor silicon substrate, and
said dimple layer having a plurality of dimples dispersed in the back surface of the semiconductor silicon substrate, and
said semiconductor chip further comprising a porous silicon layer on the back surface.
2. The semiconductor chip of claim 1 , wherein each of the dimples has substantially the same area as a circle having a diameter ranging from 0.2 to 800 μm.
3. The semiconductor chip of claim 1 , wherein a total area of the dimples ranges from 10% to 90% of an area of the back surface.
4. A semiconductor device including the semiconductor chip of claim 1 .
5. The semiconductor chip of claim 1 , wherein the porous silicon layer being formed over substantially entire area of the back surface.