Remote plasma clean process with cycled high and low pressure clean steps

1. A process for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber after processing a substrate disposed in the substrate processing chamber, the process comprising:

transferring the substrate out of the substrate processing chamber;

removing the unwanted deposition build-up by:

(a) flowing a fluorine-containing etchant gas into a remote plasma source fluidly coupled to the substrate processing chamber, forming reactive species from the fluorine-containing etchant gas and transporting the reactive species into the substrate processing chamber; and

(b) cycling pressure within the substrate processing chamber between a high pressure within a first range and a low pressure within a second range for at least two cycles of both high pressure and low pressure while continuously flowing the fluorine-containing etchant gas into the remote plasma source and continuously transporting the reactive species into the substrate processing chamber, wherein the high pressure is higher than the low pressure, a flow rate of the fluorine-containing etchant gas into the remote plasma source is 3000 sccms or more during the high pressure cycles and a duration of the low pressure cycles is between 4-8 seconds.

2. The process set forth in claim 1 wherein the high pressure is less than 15 Torr and the low pressure is 50 percent or less than the high pressure.

3. The process set forth in claim 1 wherein the high pressure is between 4-15 Torr and the low pressure is between 0.5-4 Torr.

4. The process set forth in claim 1 wherein the high pressure is between 5-8 Torr and the low pressure is between 0.5-2.5 Torr.

5. The process set forth in claim 1 wherein the fluorine-containing etchant gas comprises nitrogen triflouride.

6. The process set forth in claim 1 wherein a duration of each low pressure cycle is between 10-33 percent of the duration of the preceding high pressure cycle.

7. The process set forth in claim 1 further comprising heating the substrate processing chamber with an in situ plasma formed from an inert gas prior to flowing the fluorine-containing etchant gas into the remote plasma source.

8. The process set forth in claim 1 wherein the high and low pressure cycles are cycled at least four times during the process.

9. The process set forth in claim 1 further comprising, after step (b), reducing the flow rate of the fluorine-containing etchant gas.

10. The process set forth in claim 2 wherein a flow rate of the fluorine-containing etchant gas into the remote plasma source is at least 4 liters per minute when pressure within the substrate processing chamber is within the first range during the high pressure cycles.

11. The process set forth in claim 9 wherein the fluorine-containing etchant gas comprises nitrogen trifluoride.

12. A process for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber after processing a substrate disposed in the substrate processing chamber, the process comprising:

transferring the substrate out of the substrate processing chamber;

removing the unwanted deposition build-up by:

(a) flowing a fluorine-containing etchant gas into a remote plasma source fluidly coupled to the substrate processing chamber and forming reactive species from the fluorine-containing etchant gas;

(b) maintaining a continuous flow of the reactive species from the remote plasma source to the substrate processing chamber while repeating a plurality of times a cycle of:

(i) a high pressure clean step in which the reactive species are flown into the substrate processing chamber while pressure within the substrate processing chamber is maintained between 4-15 Torr, and

(ii) a low pressure clean step in which the reactive species are flown into the substrate processing chamber while reducing the pressure of the substrate processing chamber by at least 50 percent of a high pressure reached in the high pressure clean step, wherein a flow rate of the fluorine-containing etchant gas into the remote plasma source is 3000 sccms or more during the high pressure clean steps and a duration of the low pressure clean steps is between 4-8 seconds.

13. The process set forth in claim 12 wherein the high pressure is between 5-8 Torr and the low pressure is between 0.5-2.5 Torr.

14. The process set forth in claim 12 wherein a flow rate of the fluorine-containing etchant gas into the remote plasma source is at least 4 liters per minute when pressure within the substrate processing chamber is maintained between 4-15 Torr during the high pressure clean step.

15. The process set forth in claim 12 wherein the fluorine-containing etchant gas comprises nitrogen triflouride.

16. The process set forth in claim 12 wherein the high and low pressure steps are cycled at least four times during the process.

17. The process set forth in claim 12 wherein the low pressure clean step has a duration of between 10-33 percent of that of the high pressure clean step.

18. The process set forth in claim 12 further comprising, after step (b)(ii), reducing the flow rate of the fluorine-containing etchant gas.

19. The process set forth in claim 18 wherein the fluorine-containing etchant gas comprises nitrogen trifluoride.