IP Library Granted Patent US 8,008,952
Granted Patent B2
US 8,008,952 · App. 12/659,248 · Granted Aug 30, 2011

Buffer circuit having switch circuit capable of outputing two and more different high voltage potentials

Assignee: Renesas Electronics Corporation
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 8,008,952
App. No.
12/659,248
Granted
Aug 30, 2011
Kind
B2
Abstract

A buffer circuit outputs a low voltage and high voltages as opposed logic signals and a first high voltage and a second high voltage that is higher than the first high voltage as the high voltages. The buffer includes a logic control circuit, a first MOS transistor provided between a power supply for feeding the first high voltage and an output terminal, the first MOS transistor including a gate receiving a control signal of the first high voltage level outputted from the logic control circuit, and a backgate receiving the first high voltage, a second MOS transistor provided between a power supply for feeding the second high voltage and the output terminal, the second MOS transistor including a gate receiving a control signal of the second high voltage level outputted from the logic control circuit, and a backgate receiving the second high voltage, and a first switch circuit provided between the first MOS transistor and the output terminal and controlled ON/OFF state thereof by the control signal of the second high voltage level.

Claims (40)

1. A buffer circuit for outputting low and high voltages as opposed logic signals and capable of outputting a first high voltage and a second high voltage that is higher than the first high voltage as the high voltages, the buffer circuit comprising:

a logic control circuit;

a first metal oxide semiconductor (MOS) transistor provided between a power supply for feeding the first high voltage and an output terminal, the first MOS transistor including a gate receiving a control signal of the first high voltage outputted from the logic control circuit, and a backgate receiving the first high voltage;

a second MOS transistor provided between a power supply for feeding the second high voltage and the output terminal, the second MOS transistor including a gate receiving a control signal of the second high voltage outputted from the logic control circuit, and a backgate receiving the second high voltage; and

a switch circuit provided between the first MOS transistor and the output terminal and an ON/OFF state thereof being controlled by the control signal of the second high voltage level.

2. The buffer circuit according to claim 1 , further comprising:

a third MOS transistor provided between the power supply for feeding the low voltage and the output terminal and including a gate receiving a control signal of the second high voltage outputted from the logic control circuit.

3. The buffer circuit according to claim 1 , wherein the switch circuit becomes ON when the first MOS transistor is ON, and becomes OFF when the first MOS transistor is OFF.

4. The buffer circuit according to claim 1 , wherein the switch circuit includes a PMOS transistor and an NMOS transistor mutually connected in parallel.

5. The buffer circuit according to claim 1 , wherein the switch circuit only includes a PMOS transistor.

6. The buffer circuit according to claim 1 , wherein the first switch circuit only includes an NMOS transistor.

7. The buffer circuit according to claim 1 , further comprising:

a fourth MOS transistor, capable of outputting a third high voltage between the first high voltage and the second high voltage as the high voltage, being provided between a power supply for feeding the third high voltage and the output terminal, the fourth MOS transistor including a gate receiving a control signal of the third high voltage outputted from the logic control circuit, and a backgate receiving the third high voltage; and

a second switch circuit provided between the fourth MOS transistor and the output terminal and an ON/OFF state thereof being controlled by a control signal of the second high voltage level.

8. A buffer circuit, comprising:

a first power source node receiving a first power source potential;

a second power source node receiving a second power source potential lower than the first power source potential;

a third power source node receiving a third power source potential lower than the second power source potential;

a first transistor of a first conductive type coupled between the second power source node and a first node, and including a control gate controlled by the second power source potential and a back gate receiving the second power source potential;

a second transistor of the first conductive type coupled between the first power source node and an output node;

a third transistor of a second conductive type coupled between the third power source node and the output node; and

a fourth transistor of the first conductive type coupled between the first node and the output node, and including a control gate controlled by the first power source potential and a back gate receiving the first power source potential.

9. The buffer circuit as claimed in claim 8 , further comprising:

a fifth transistor of the second conductive type coupled between the first node and the output node, and including a control gate controlled by the first power source potential and a back gate receiving the third power source potential.

10. The buffer circuit as claimed in claim 8 , further comprising:

a sixth transistor of the first conductive type coupled between a fourth power source node and a second node, the fourth power source node receiving a fourth power source potential lower than the second power source potential and higher than the third power source potential;

a seventh transistor of the first conductive type coupled between the first node and the output node, and including a control gate controlled by the first power source potential and a back gate receiving the first power source potential; and

an eighth transistor of the second conductive type coupled between the second node and the output node, and including a control gate controlled by the first power source potential and a back gate receiving the third power source potential.

11. A buffer circuit, comprising:

a first power source node receiving a first power source potential;

a second power source node receiving a second power source potential lower than the first power source potential;

a third power source node receiving a third power source potential lower than the second power source potential;

a first transistor of a first conductive type coupled between the second power source node and a first node, and including a control gate controlled by the second power source potential and a back gate receiving the second power source potential;

a second transistor of the first conductive type coupled between the first power source node and an output node;

a third transistor of a second conductive type coupled between the third power source node and the output node; and

a fourth transistor of the second conductive type coupled between the first node and the output node, and including a control gate controlled by the first power source potential and a back gate receiving the third power source potential.

12. The buffer circuit as claimed in claim 11 , further comprising:

a fifth transistor of the first conductive type coupled between a fourth power source node a second node, the fourth power source node receiving a fourth power source potential lower than the second power source potential and higher than the third power source potential;

a sixth transistor of the first conductive type coupled between the first node and the output node, and including a control gate controlled by the first power source potential and a back gate receiving the first power source potential; and

a seventh transistor of the second conductive type coupled between the second node and the output node, and including a control gate controlled by the first power source potential and a back gate receiving the third power source potential.

Assignments (3)
CHANGE OF ADDRESS Recorded Nov 29, 2017
From: RENESAS ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 044928/0001 →
CHANGE OF NAME Recorded Oct 26, 2010
From: NEC ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 025193/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 2, 2010
From: KUROKAWA, TATSUFUMI
To: NEC ELECTRONICS CORPORATION
Reel/Frame 024069/0248 →
Priority Claims (1)
JP 2009-073531 · Mar 25, 2009 · national
Continuity (1)
Related Publication 20100244904A1 · Sep 30, 2010