IP Library › Granted Patent US 8,030,670
Granted Patent B2
US 8,030,670 · App. 12/314,738 · Granted Oct 4, 2011

Multi-chip package for LED chip and multi-chip package LED device including the multi-chip package

Assignee: Samsung Electronics Co., Ltd.
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Quick Facts
Patent No.
US 8,030,670
App. No.
12/314,738
Granted
Oct 4, 2011
Kind
B2
Abstract

Provided is a multi-chip package light emitting diode (LED) device including a plurality of LED chips within a single package. The LED device may include a base substrate, a multi-chip package for a LED on the base substrate, and a light radiator surrounding the multi-chip package and radiating light emitted by the multi-chip package for a LED, wherein the multi-chip package for a LED may include a plurality of LED chips on a single wafer substrate.

Claims (40)

1. A multi-chip package for a light emitting diode (LED) comprising:

a plurality of LED chips on a single wafer substrate, the plurality of LED chips being connected to each other in parallel,

wherein each of the plurality of LED chips includes,

a first clad layer on the single wafer substrate,

an active layer partially formed on a top surface of the first clad layer,

a second clad layer on the active layer,

a first electrode partially formed on a top surface of the first clad layer, and

a second electrode on the second clad layer,

a package block including the plurality of LED chips;

first and second bonding pads on the package block and connected to an external power source;

a first wiring pattern connecting the first bonding pad and the first electrode of each of the plurality of LED chips; and

a second wiring pattern connecting the second bonding pad and the second electrode of each of the plurality of LED chips.

2. The multi-chip package of claim 1 , wherein the plurality of LED chips share the single wafer substrate and the first clad layer.

3. The multi-chip package of claim 1 , wherein the first and second wiring patterns are on the wafer substrate.

4. The multi-chip package of claim 1 , further comprising:

at least two wiring groups each including the first and second bonding pads and the first and second wiring patterns.

5. The multi-chip package of claim 4 , wherein each of the two or more wiring groups is connected to different LED chips.

6. A light emitting diode (LED) device comprising:

a base substrate;

a multi-chip package for a LED on the base substrate; and

a light emitter surrounding the multi-chip package and emitting light generated in the multi-chip package for a LED,

wherein the multi-chip package for a LED includes,

a plurality of LED chips on a single wafer substrate, the plurality of LED chips being connected to each other in parallel,

a package block including the plurality of LED chips,

first and second bonding pads on the package block and connected to an external power source,

a first wiring pattern connecting the first bonding pad and the first electrode of each of the plurality of LED chips, and

a second wiring pattern connecting the second bonding pad and the second electrode of each of the plurality of LED chips, and

wherein each of the plurality of LED chips includes,

a first clad layer on the single wafer substrate,

an active layer partially formed on a top surface of the first clad layer,

a second clad layer on the active layer,

a first electrode partially formed on a top surface of the first clad layer, and

a second electrode on the second clad layer.

7. The LED device of claim 6 , wherein the plurality of LED chips share the single wafer substrate and the first clad layer.

8. The LED device of claim 6 , wherein the first and second wiring patterns are on the wafer substrate.

9. The LED device of claim 6 , wherein the plurality of LED chips are turned on or off simultaneously.

10. The LED device of claim 6 , wherein the multi-chip package comprises at least two wiring groups each including the first and second bonding pads and the first and second wiring patterns.

11. The LED device of claim 10 , wherein each of the two or more wiring groups is connected to different LED chips.

12. The LED device of claim 11 , wherein some of the plurality of LED chips are turned on or off independently.

13. The LED device of claim 6 , wherein current density of electric current supplied to each of the LED chips is between about 0.1 A/cm 2 and about 50 A/cm 2 .

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 16, 2008
From: KIM, KYOUNGKOOK; PARK, YOUNGSOO
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 022054/0346 →
Priority Claims (1)
KR 10-2008-0060226 · Jun 25, 2008 · national
Continuity (1)
Related Publication 20090321776A1 · Dec 31, 2009