High resolution monitoring of CD variations
An optical metrology method is disclosed for evaluating the uniformity of characteristics within a semiconductor region having repeating features such a memory die. The method includes obtaining measurements with a probe laser beam having a spot size on the order of micron. These measurements are compared to calibration information obtained from calibration measurements. The calibration information is derived by measuring calibration samples with the probe laser beam and at least one other technology having added information content. In the preferred embodiment, the other technology includes at least one of spectroscopic reflectometry or spectroscopic ellipsometry.
1. An apparatus for evaluating the characteristics of physical structures within a die on a semiconductor product wafer comprising:
a laser generating a probe beam of radiation;
optics for focusing the probe beam to a spot within the die;
a detector for monitoring the probe beam after reflection from within the die and generating output signals in response thereto; and
a processor for analyzing the output signals to evaluate the characteristics of physical structures within the die, with the analysis including a comparison to calibration information, said calibration information being derived by measuring a calibration sample using both a laser metrology technology and a spectroscopic metrology technology.
2. An apparatus as recited in claim 1 wherein the optics focuses the probe beam to spot having a diameter on the order of one micron in diameter.
3. An apparatus as recited in claim 1 wherein the spectroscopic metrology technology includes a broad band radiation beam which is focused onto the sample to a spot size larger than the spot size of the laser probe beam.
4. An apparatus as recited in claim 3 wherein the calibration information is generated with a model based analysis that correlates the results between the laser metrology technology and the spectroscopic metrology technology.
5. An apparatus as recited in claim 4 wherein the laser metrology technology includes a calibration laser beam and during the generation of the calibration information, the calibration laser beam is scanned over the region measured by the broad band radiation beam.
6. An apparatus as recited in claim 1 wherein the detector is configured to generate an output corresponding to multiple angles of incidence.
7. An apparatus as recited in claim 6 wherein the detector is in the form of a two dimensional array of detector elements.
8. An apparatus as recited in claim 1 wherein the probe beam is directed to multiple locations in order to determine the uniformity of the physical structures within the die.
9. An apparatus as recited in claim 1 wherein the processor determines at least one parameter associated with the physical structure within the eye, said parameter being selected from the group consisting of line spacing, line depth and sidewall shape.
10. An apparatus for evaluating the characteristics of physical structures within a die on a semiconductor product wafer comprising:
a laser generating a probe beam of radiation;
optics for focusing the probe beam to a spot within the die;
a detector for monitoring the probe beam after reflection from within the die and generating output signals in response thereto; and
a processor for analyzing the output signals to evaluate the characteristics of physical structures within the die, with the analysis including a comparison to calibration information, said calibration information being derived by measuring a calibration sample using both a laser metrology technology and a spectroscopic metrology technology wherein the spectroscopic metrology technology includes a broad band radiation beam which is focused onto the sample to a spot size larger than the spot size of the laser probe beam and wherein the calibration information is generated with a model based analysis that correlates the results between the laser metrology technology and the spectroscopic metrology technology.
11. An apparatus as recited in claim 10 wherein the optics focuses the probe beam to spot having a diameter on the order of one micron in diameter.
12. An apparatus as recited in claim 10 wherein the laser metrology technology includes a calibration laser beam and during the generation of the calibration information, the calibration laser beam is scanned over the region measured by the broad band radiation beam.
13. An apparatus as recited in claim 10 wherein the detector is configured to generate an output corresponding to multiple angles of incidence.
14. An apparatus as recited in claim 13 wherein the detector is in the form of a two dimensional array of detector elements.
15. An apparatus as recited in claim 10 wherein the probe beam is directed to multiple locations in order to determine the uniformity of the physical structures within the die.
16. An apparatus as recited in claim 10 wherein the processor determines at least one parameter associated with the physical structure within the die, said parameter being selected from the group consisting of line spacing, line depth and sidewall shape.